Patent US6177360B1 successfully refreshed from Google Patents.
US6177360B1
Expired / Lapsed
US
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Process for manufacture of integrated circuit device
Assignee: International Business Machines Corp
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Filing: 1997-11-06
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Granted: 2001-01-23
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Expires: 2017-11-06
Abstract
Abstract The invention relates to a process for making an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane in the presence of a photosensitive or thermally sensitive base generator.
Inventors
- 👤 Kenneth Raymond Carter
- 👤 Robert Frances Cook
- 👤 Martha Alyne Harbison
- 👤 Craig Jon Hawker
- 👤 James Lupton Hedrick
- 👤 Victor Yee-Way Lee
- 👤 Eric Gerhard Liniger
- 👤 Robert Dennis Miller
- 👤 Willi Volksen
- 👤 Do Yeung Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6926; H10W; H10W20/00; H10W20/01; H10W20/071; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
150 words
A process for forming an integrated circuit device comprising: (a) positioning a layer of a dielectric composition comprising a silsesquioxane and a photosensitive amine generator, said amine generator selected from the group consisting of carbamate derivatives derived from substituted o-nitrobenzyl alcohols and mono- or diisocyanates urethanes, benzyl carbamates, benzyl sulfonamides, benzyl quaternary ammonium salts, imines, iminium salts, cobalt-amine complexes, (α-methyl-2-nitrobenzyloxycarbonyl) carbamates of primary or secondary amines, diamines or polyamines and compounds having the formula RR′—N—COOR″, where R and R′ are independently hydrido or C 1 -C 6 alkyl and R″ is nitrobenzyl or α-methylnitrobenzyl, on a substrate; (b) generating amine from said photosensitive amine generator; (c) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said substrate; (d) lithographically patterning said dielectric layer; (e) depositing a metallic film onto said patterned dielectric layer; and (f) planarizing said metallic film to form an integrated circuit.
Claim 2
Dependent Claim
150 words
A process for forming an integrated circuit device comprising: (a) positioning a layer of a dielectric composition comprising a silsesquioxane and a photosensitive amine generator, said amine generator selected from the group consisting of carbamate derivatives derived from substituted o-nitrobenzyl alcohols and mono- or diisocyanates urethanes, benzyl carbamates, benzyl sulfonamides, benzyl quaternary ammonium salts, imines, iminium salts, cobalt-amine complexes, (α-methyl-2-nitrobenzyloxycarbonyl) carbamates of primary or secondary amines, diamines or polyamines and compounds having the formula RR′—N—COOR″, where R and R′ are independently hydrido or C 1 -C 6 alkyl and R″ is nitrobenzyl or α-methylnitrobenzyl, on a substrate; (b) generating amine from said photosensitive amine generator; (c) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said substrate; (d) lithographically patterning said dielectric layer; (e) depositing a metallic film onto said patterned dielectric layer; and (f) planarizing said metallic film to form an integrated circuit.
Claim 3
Dependent Claim
24 words
A process in accordance with claim 1 wherein said silsesquioxane is C 1 -C 4 alkyl silsesquioxane or C 1 -C 4 alkyl/phenyl silsesquioxane.
Claim 4
Dependent Claim
24 words
A process in accordance with claim 1 wherein said urethane is a carbamate derived from a substituted o-nitrobenzyl alcohol and a mono- or diisocyanate.
Claim 5
Dependent Claim
15 words
A process in accordance with claim 1 wherein said photosensitive amine generator is o-nitrobenzyl carbamate.
Claim 6
Dependent Claim
129 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning said metallic film; (c) depositing a layer of a dielectric composition comprising a silsesquioxane and a photosensitive amine generator, said amine generator selected from the group consisting of urethanes, benzyl carbamates, benzyl sulfonamides, benzyl quaternary ammonium salts, imines, iminium salts, cobalt-amine complexes, (α-methyl-2-nitrobenzylcarbonyl) carbamates of primary or secondary amines, diamines or polyamines and compounds having the formula RR′—N—COOR″, where R and R′ hare independently hydrido or C 1 -C 6 alkyl and R″ is nitrobenzyl or α-methylnitrobenzyl, on said patterned metallic film; (d) generating amine from said photosensitive amine generator; and (e) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said metallic film.
Claim 7
Dependent Claim
129 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning said metallic film; (c) depositing a layer of a dielectric composition comprising a silsesquioxane and a photosensitive amine generator, said amine generator selected from the group consisting of urethanes, benzyl carbamates, benzyl sulfonamides, benzyl quaternary ammonium salts, imines, iminium salts, cobalt-amine complexes, (α-methyl-2-nitrobenzylcarbonyl) carbamates of primary or secondary amines, diamines or polyamines and compounds having the formula RR′—N—COOR″, where R and R′ hare independently hydrido or C 1 -C 6 alkyl and R″ is nitrobenzyl or α-methylnitrobenzyl, on said patterned metallic film; (d) generating amine from said photosensitive amine generator; and (e) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said metallic film.
Claim 8
Dependent Claim
24 words
A process in accordance with claim 5 wherein said silsesquioxane is C 1 -C 4 alkyl silsesquioxane or C 1 -C 4 alkyl/phenol silsesquioxane.
Claim 9
Dependent Claim
28 words
A process in accordance with claim 5 wherein said base generator is a thermal base generator selected from the group consisting of carbamates and organic quaternary ammonium salts.
Claim 10
Dependent Claim
24 words
A process in accordance with claim 5 wherein said urethane is a carbamate derived from a substituted o-nitrobenzyl alcohol and a mono- or diisocyanate.
Claim 11
Dependent Claim
15 words
A process in accordance with claim 5 wherein said photosensitive amine generator is o-nitrobenzyl carbamate.
Claim 12
Dependent Claim
121 words
A process for forming an integrated circuit device comprising: (a) positioning a layer of a dielectric composition comprising a silsesquioxane and a thermal amine generator, said thermal amine generator selected from the group consisting of carbamates, organic quaternary ammonium salts and a compound having the structural formula RR′N—COOR″, where R and R′ are independently hydrido or C 1 -C 6 alkyl and R″ is t-butyl, on a substrate; (b) generating amine from said thermal amine generator; (c) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said substrate; (d) lithographically patterning said dielectric layer; (e) depositing a metallic film onto said patterned dielectric layer; and (f) planarizing said metallic film to form an integrated circuit.
Claim 13
Dependent Claim
121 words
A process for forming an integrated circuit device comprising: (a) positioning a layer of a dielectric composition comprising a silsesquioxane and a thermal amine generator, said thermal amine generator selected from the group consisting of carbamates, organic quaternary ammonium salts and a compound having the structural formula RR′N—COOR″, where R and R′ are independently hydrido or C 1 -C 6 alkyl and R″ is t-butyl, on a substrate; (b) generating amine from said thermal amine generator; (c) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said substrate; (d) lithographically patterning said dielectric layer; (e) depositing a metallic film onto said patterned dielectric layer; and (f) planarizing said metallic film to form an integrated circuit.
Claim 14
Dependent Claim
24 words
A process in accordance with claim 10 wherein said thermal amine generator is a t-butoxycarbamate of a primary or secondary amine, diamine or polyamine.
Claim 15
Dependent Claim
26 words
A process in accordance with claim 11 wherein said t-butoxycarbamate is selected from the group consisting of polyalkylene imine- or amino-substituted polyethers, polystyrenes, polymethacrylates and polysiloxanes.
Claim 16
Dependent Claim
12 words
A process in accordance with claim 12 wherein said t-butoxycarbamate is bis(t-butoxycarbonyl)-4,7,10-trioxa-1,13-tridecanediamine.
Claim 17
Dependent Claim
109 words
A process for forming an integrated circuit device comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning said metallic film; (c) depositing a layer of dielectric composition comprising a silsesquioxane and a thermal amine generator, said thermal amine generator selected from the group consisting of carbamates, organic quaternary ammonium salts and a compound having the structural formula RR′N—COOR″, where R and R′ are independently hydrido or C 1 -C 6 alkyl and R″ is t-butyl, on a substrate; (d) generating amine from said thermal amine generator; and (e) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said metallic film.
Claim 18
Dependent Claim
109 words
A process for forming an integrated circuit device comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning said metallic film; (c) depositing a layer of dielectric composition comprising a silsesquioxane and a thermal amine generator, said thermal amine generator selected from the group consisting of carbamates, organic quaternary ammonium salts and a compound having the structural formula RR′N—COOR″, where R and R′ are independently hydrido or C 1 -C 6 alkyl and R″ is t-butyl, on a substrate; (d) generating amine from said thermal amine generator; and (e) heating said dielectric composition to react said silsesquioxane whereby a dielectric layer is formed on said metallic film.
Claim 19
Dependent Claim
24 words
A process in accordance with claim 14 wherein said thermal amine generator is a t-butoxycarbamate of a primary or secondary amine, diamine or polyamine.
Claim 20
Dependent Claim
26 words
A process in accordance with claim 15 wherein said t-butoxycarbamate is selected from the group consisting of polyalkylene imine- or amino-substituted polyethers, polystyrenes, polymethacrylates and polysiloxanes.
Claim 21
Dependent Claim
12 words
A process in accordance with claim 16 wherein said t-butoxycarbamate is bis(t-butoxycarbonyl)-4,7,10-trioxa-1,13-tridecanediamine.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-23 | 2004-07-24 | 2005-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-23 | 2008-07-24 | 2009-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-23 | 2012-07-24 | 2013-01-23 | $7700.00 | Window Closed / Lapsed |