← Back to Patent Explorer
US6163062A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device having a metallic fuse member and cutting method thereof with laser light

Assignee: Renesas Electronics Corp
•
Filing: 1998-05-04
•
Granted: 2000-12-19
•
Expires: 2018-05-04
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members (1a, 1b) is smaller than a value obtained by subtracting an alignment error α of the laser light (4) from a spot diameter D of the laser light (4), i.e., the value (D-α). The fuse members (1a, 1b) are spaced a distance l larger than a value obtained by adding the alignment error α to the half of the spot diameter D, i.e., the value (D/2+α).

Inventors

  • 👤 Shigeru Shiratake
  • 👤 Hideki Genjo
  • 👤 Yasuhiro Ido
  • 👤 Atsushi Hachisuka
  • 👤 Koji Taniguchi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 13:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494; H10W20/01; H10W20/031; H10W20/064; H10W20/065

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 134 words
A semiconductor device comprising: a semiconductor substrate; a pair of non-metallic conductive members disposed on said semiconducting substrate; first to Nth (N≧2) metal wiring layers stacked through interlayer insulating film upward in sequence over said semiconductor substrate and said pair of non-metallic conductive members; at least one fuse member formed by said (N-1)th metal wiring layer, said at least one fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said at least one fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α; and an insulating layer disposed over said Nth metal wiring layer, said insulating layer including an opening having a diameter S directly above said fuse member, wherein L≦D-α, and S≧L.
Claim 2
Dependent Claim 134 words
A semiconductor device comprising: a semiconductor substrate; a pair of non-metallic conductive members disposed on said semiconducting substrate; first to Nth (N≧2) metal wiring layers stacked through interlayer insulating film upward in sequence over said semiconductor substrate and said pair of non-metallic conductive members; at least one fuse member formed by said (N-1)th metal wiring layer, said at least one fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said at least one fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α; and an insulating layer disposed over said Nth metal wiring layer, said insulating layer including an opening having a diameter S directly above said fuse member, wherein L≦D-α, and S≧L.
Claim 3
Dependent Claim 8 words
The semiconductor device of claim 1, wherein S>2L.
Claim 4
Dependent Claim 10 words
The semiconductor device of claim 1, wherein N is 2.
Claim 5
Dependent Claim 8 words
The semiconductor device of claim 1, wherein N≧3.
Claim 6
Dependent Claim 23 words
The semiconductor device of claim 4, wherein said (N-1)th metal wiring layer form a stacked-via type structure with an (N-2)th metal wiring layer.
Claim 7
Dependent Claim 44 words
The semiconductor device of claim 1, wherein said at least one fuse member comprises a first fuse member and a second fuse member adjacent to said first fuse member, said first and second fuse members being spaced apart by a distance l, wherein (D/2)+α≦l.
Claim 8
Dependent Claim 141 words
A semiconductor device comprising: a semiconductor substrate; a pair of non-metallic conductive members disposed on said semiconducting substrate; first to Nth (N≧3) metal wiring layers stacked through interlayer insulation films upward in sequence over said semiconductor substrate, said first to Nth metal wiring layers being disposed over said pair of non-metallic conductive members; a fuse member formed by an (N-2)th metal wiring layer, said fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α; and an opening having a diameter M provided in one of said interlayer insulation films between said Nth metal wiring layer and said (N-1)th metal wiring layer, directly above said fuse member, wherein L≦D-α, and M≧2L.
Claim 9
Dependent Claim 141 words
A semiconductor device comprising: a semiconductor substrate; a pair of non-metallic conductive members disposed on said semiconducting substrate; first to Nth (N≧3) metal wiring layers stacked through interlayer insulation films upward in sequence over said semiconductor substrate, said first to Nth metal wiring layers being disposed over said pair of non-metallic conductive members; a fuse member formed by an (N-2)th metal wiring layer, said fuse member having ends electrically connected to said pair of non-metallic conductive members through contact holes, said fuse member having a total length L and being cuttable by a laser light having a spot diameter D and an alignment error α; and an opening having a diameter M provided in one of said interlayer insulation films between said Nth metal wiring layer and said (N-1)th metal wiring layer, directly above said fuse member, wherein L≦D-α, and M≧2L.
Claim 10
Dependent Claim 33 words
The semiconductor device of claim 7, further comprising an insulating layer disposed over said Nth metal wiring layer and including an opening having a diameter S directly above said fuse member, wherein S>M.

References Cited (Backward Citations)

JPS5892252A Cited
JPH06314535A Cited
US5374590A Cited
US5444012A Cited
US5879966A Cited
JPH08213465A Cited
US5608257A Cited
US5760674A Cited
US5872389A Cited
US5851903A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-12-19 2004-06-19 2004-12-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-12-19 2008-06-19 2008-12-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-12-19 2012-06-19 2012-12-19 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag