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US6153504A
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Method of using a silicon oxynitride ARC for final metal layer
Assignee: GlobalFoundries Inc
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Filing: 1999-08-16
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Granted: 2000-11-28
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Expires: 2019-08-16
Abstract
Abstract A SiON ARC is formed on the uppermost metal or bonding pad layer, a topside protective layer, e.g., oxide, nitride or oxynitride, formed thereon and etching is conducted through the topside protective layer and SiON ARC to form a bonding pad opening. The use of SiON as an ARC reduces bonding pad etching time, enables a reduction in the height of the metal stack for reduced capacitance between metal lines and increased circuit speed, and improves etch marginality due to the reduced aspect ratio.
Inventors
- 👤 Jeffrey A. Shields
- 👤 Bharath Rangarajan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:31
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10P; H10P50/00; H10P50/71; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433; H10W72/20; H10W72/251; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
144 words
A method of manufacturing a multi-metal layer semiconductor device, the method comprising: forming an uppermost metal layer over a substrate; forming a silicon oxynitride layer on the uppermost metal layer; forming a photoresist pattern on the silicon oxynitride layer; patterning the uppermost metal layer by etching to form a plurality of uppermost metal features, wherein the silicon oxynitride layer serves as an anti-reflective coating and a hard mask; depositing a topside protective dielectric layer on the patterned uppermost metal layer; etching through the topside protective dielectric layer and silicon oxynitride layer to form a bonding pad opening to an uppermost metal feature for external electrical connection; and forming a bonding pad and external electrical connection in the bonding pad opening; wherein the silicon oxynitride layer functions as both an antireflective coating and an etch stop layer in the patterning the uppermost metal layer step.
Claim 2
Independent Claim
144 words
A method of manufacturing a multi-metal layer semiconductor device, the method comprising: forming an uppermost metal layer over a substrate; forming a silicon oxynitride layer on the uppermost metal layer; forming a photoresist pattern on the silicon oxynitride layer; patterning the uppermost metal layer by etching to form a plurality of uppermost metal features, wherein the silicon oxynitride layer serves as an anti-reflective coating and a hard mask; depositing a topside protective dielectric layer on the patterned uppermost metal layer; etching through the topside protective dielectric layer and silicon oxynitride layer to form a bonding pad opening to an uppermost metal feature for external electrical connection; and forming a bonding pad and external electrical connection in the bonding pad opening; wherein the silicon oxynitride layer functions as both an antireflective coating and an etch stop layer in the patterning the uppermost metal layer step.
Claim 3
Dependent Claim
17 words
The method according to claim 1, further comprising forming an oxide layer on the silicon oxynitride layer.
Claim 4
Dependent Claim
16 words
The method according to claim 2, comprising forming a silicon oxide layer as the oxide layer.
Claim 5
Dependent Claim
23 words
The method according to claim 3, comprising forming the silicon oxynitride layer at a thickness of about 300 Å to about 1,000 Å.
Claim 6
Dependent Claim
23 words
The method according to claim 4, comprising forming the silicon oxynitride layer at a thickness of about 500 Å to about 750 Å.
Claim 7
Dependent Claim
23 words
The method according to claim 3, comprising forming the silicon oxide layer at a thickness of about 20 Å to about 300 Å.
Claim 8
Dependent Claim
19 words
The method according to claim 3, comprising depositing an oxide, nitride or oxynitride layer as the topside protective layer.
Claim 9
Dependent Claim
22 words
The method according to claim 7, comprising depositing a silicon oxide, silicon nitride or silicon oxynitride layer as the topside protective layer.
Claim 10
Dependent Claim
19 words
The method according to claim 1, comprising etching to form the bonding pad opening in a single etching step.
Claim 11
Dependent Claim
26 words
The method according to claim 9, comprising etching to form the bonding pad opening at a rate of about 5000 Å, minute to about 10,000 Å/minute.
Claim 12
Dependent Claim
21 words
The method according to claim 1, comprising etching to form the bonding pad opening for no longer than about 170 seconds.
Claim 13
Dependent Claim
21 words
The method according to claim 1, further comprising forming a barrier layer and forming the metal layer on the barrier layer.
Claim 14
Dependent Claim
16 words
The method according to claim 1, wherein the photoresist pattern comprises a deep UV photoresist material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |