Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
92 words
A method of making a capacitor structure, comprising the steps of: forming an underlying layer on a surface having a first opening therein; forming a separator layer on the underlying layer having a second opening therein, the second opening overlying the first opening such that the separator layer overhangs the underlying layer; forming a discontinuous-as-deposited film as a bottom electrode on the separator layer, the discontinuity substantially in register with the second opening; forming a dielectric layer on the bottom electrode; and forming a continuous top electrode layer on the dielectric layer.
Claim 2
Independent Claim
92 words
A method of making a capacitor structure, comprising the steps of: forming an underlying layer on a surface having a first opening therein; forming a separator layer on the underlying layer having a second opening therein, the second opening overlying the first opening such that the separator layer overhangs the underlying layer; forming a discontinuous-as-deposited film as a bottom electrode on the separator layer, the discontinuity substantially in register with the second opening; forming a dielectric layer on the bottom electrode; and forming a continuous top electrode layer on the dielectric layer.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the underlying layer is selectively etchable with respect to the separator layer.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein the separator layer is an oxide.
Claim 5
Dependent Claim
12 words
The method of claim 2 wherein the underlying layer is a nitride.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the bottom electrode is a material selected from the group consisting of noble metals and noble metal oxides.
Claim 7
Dependent Claim
11 words
The method of claim 5 wherein the bottom electrode is platinum.
Claim 8
Dependent Claim
14 words
The method of claim 1 wherein the dielectric layer is a high-dielectric constant material.
Claim 9
Dependent Claim
13 words
The method of claim 7 wherein the dielectric layer is (Ba,Sr)TiO 3 .
Claim 10
Dependent Claim
24 words
The method of claim 1 wherein the underlying layer has a thickness at least equal to two times a thickness of the discontinuous film.
Claim 11
Dependent Claim
26 words
The method of claim 1 wherein the separator layer overhangs the underlying layer by an amount at least two times a thickness of the discontinuous film.
Claim 12
Dependent Claim
16 words
The method of claim 1 wherein the discontinuous film is formed using a directional deposition process.
Claim 13
Dependent Claim
22 words
The method of claim 11 wherein the underlying layer has a thickness at least equal to the thickness of the discontinuous film.
Claim 14
Dependent Claim
26 words
The method of claim 11 wherein the separator layer overhangs the underlying layer by an amount at least equal to the thickness of the discontinuous film.