US6147014A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming of deuterium containing nitride spacers and fabrication of semiconductor devices
Assignee: ILLINOIS UNIVERSITY OF BOARD OF TRUSTEES
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Filing: 1998-01-16
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Granted: 2000-11-14
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Expires: 2018-01-16
Abstract
Abstract Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.
Inventors
- 👤 Joseph W. Lyding
- 👤 Karl Hess
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:15
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P95/00; H10P95/90; H10P95/94; H10D64/01342; H10D64/691; Y; Y10; Y10S; Y10S438/00; Y10S438/91; Y10S438/974
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
50 words
A method for making a silicon nitride spacer of a semiconductor device, comprising: fabricating a silicon nitride spacer of a semiconductor device by reacting an ammonia compound with a silane compound, wherein at least one of said compounds contains deuterium, so as to form a silicon nitride spacer containing deuterium.
Claim 2
Independent Claim
50 words
A method for making a silicon nitride spacer of a semiconductor device, comprising: fabricating a silicon nitride spacer of a semiconductor device by reacting an ammonia compound with a silane compound, wherein at least one of said compounds contains deuterium, so as to form a silicon nitride spacer containing deuterium.
Claim 3
Dependent Claim
38 words
The method of claim 1, wherein said fabricating includes reacting a compound of the formula ND.sub.(n) H.sub.(3-n) wherein n is 1, 2 or 3, with a silane compound, so as to form a silicon nitride spacer containing deuterium.
Claim 4
Dependent Claim
11 words
The method of claim 1, wherein said silane compound contains deuterium.
Claim 5
Dependent Claim
24 words
The method of claim 3, wherein said silane compound is encompassed by the formula SiD.sub.(m) H.sub.(4-m) wherein m is 1, 2, 3 or 4.
Claim 6
Dependent Claim
55 words
The method of claim 3, wherein said silane compound is encompassed by the formula Si.sub.2 D.sub.o H.sub.p X.sub.q wherein: o is 1, 2, 3, 4, 5 or 6; p is 0, 1, 2, 3, 4 or 5; q is 0, 1, 2, 3, 4 or 5; and X is halogen, with the proviso that o+p+q=6.
Claim 7
Dependent Claim
18 words
The method of claim 1, comprising reacting ND 3 with SiD 4 to form the silicon nitride spacer.
Claim 8
Dependent Claim
20 words
The method of claim 1, comprising reacting ND 3 with SiCl 2 D 2 to form the silicon nitride spacer.
Claim 9
Dependent Claim
13 words
The method of claim 1, wherein said ammonia compound is ND 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |