US4290825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices containing protons and deuterons implanted regions
Assignee: Ricardo AEA Ltd
•
Filing: 1979-02-13
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Granted: 1981-09-22
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Expires: 1999-02-13
Abstract
Abstract A process for manufacturing gallium arsenide devices in which regions of high resistivity are created in the gallium arsenide by subjecting the regions to bombardment by protons and then by deuterons, and devices so made.
Inventors
- 👤 Geoffrey Dearnaley
- 👤 Kenneth Steeples
- 👤 Ian J. Saunders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:15
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/208; H10W; H10W10/00; H10W10/01
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
86 words
A process for producing regions of high resistivity in a semiconductor substrate body of the type which experience an increase in resistivity when subjected to bombardment with protons comprising the operations of implanting protons into the said regions of the substrate with energies up to a maximum value corresponding to a desired depth of penetration of the protons into the substrate, and implanting deuterons into the said regions of the substrate with energies such as to give the same depth of penetration as for the protons.
Claim 2
Dependent Claim
86 words
A process for producing regions of high resistivity in a semiconductor substrate body of the type which experience an increase in resistivity when subjected to bombardment with protons comprising the operations of implanting protons into the said regions of the substrate with energies up to a maximum value corresponding to a desired depth of penetration of the protons into the substrate, and implanting deuterons into the said regions of the substrate with energies such as to give the same depth of penetration as for the protons.
Claim 3
Dependent Claim
13 words
A process according to claim 1 wherein the semiconductor material is gallium arsenide.
Claim 4
Dependent Claim
21 words
A process according to claim 2 wherein the quantities of deuterons and protons implanted are of the same order of magnitude.
Claim 5
Dependent Claim
41 words
A process according to claim 2 wherein the gallium arsenide has an initial carrier concentration of the order of 10 18 carriers per cubic centimeter, and the deuteron and proton doses are of the order of 10 14 per square centimeter.
Claim 6
Dependent Claim
29 words
A process according to claim 1 wherein the implantation is carried out at a series of energy levels and the proton implantation is carried out before the deuteron implantation.
Claim 7
Dependent Claim
25 words
A process according to claim 4 wherein the proton implantation is carried out in ten evenly spaced energy levels between approximately 0.1 and 1.0 MeV.
Claim 8
Dependent Claim
20 words
A process according to claim 4 wherein the deuterons are implanted with energies approximately 1.2 times that of the protons.
Claim 9
Dependent Claim
25 words
A process according to claim 7 wherein the deuteron implantation is carried out at ten evenly spaced energy levels between approximately 0.12 and 1.2 MeV.
Claim 10
Dependent Claim
46 words
A semiconductor device comprising a substrate body including regions of low resistivity separated by regions into which protons and deuterons have been implanted to form substantially uniform layers of high resistivity and dimensions such as to isolate electrically the regions of the substrate of low resistivity.
Claim 11
Dependent Claim
46 words
A semiconductor device comprising a substrate body including regions of low resistivity separated by regions into which protons and deuterons have been implanted to form substantially uniform layers of high resistivity and dimensions such as to isolate electrically the regions of the substrate of low resistivity.
Claim 12
Dependent Claim
13 words
A semiconductor device made according to a process as claimed in claim 1.
References Cited (Backward Citations)
US3805376A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-21 | 1985-03-23 | 1985-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-21 | 1989-03-23 | 1989-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-21 | 1993-03-23 | 1993-09-22 | $7700.00 | Window Closed / Lapsed |