Patent US6144051A successfully refreshed from Google Patents.
US6144051A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a metal-insulator-metal capacitor
Assignee: NEC Corp
•
Filing: 1998-05-29
•
Granted: 2000-11-07
•
Expires: 2018-05-29
Abstract
Abstract A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film on a substrate, forming a MIM capacitor on the first dielectric film, forming a second dielectric film covering the MIM capacitor, selectively removing the first and second dielectric films to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film on the second dielectric film and the substrate, and forming a transistor on the third dielectric film. The second dielectric film protects the capacitor insulator film of the MIM capacitor.
Inventors
- 👤 Takeshi B Nishimura
- 👤 Naotaka Iwata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:49
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
A semiconductor device comprising a substrate, a metal-insulator-metal (MIM) capacitor overlying said substrate and having a bottom electrode, a capacitor insulator film and a top electrode, a first dielectric film covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode, a second dielectric film formed on said first dielectric film and said substrate, said second dielectric film being made from a different material than said first dielectric film and having a first opening for exposing a portion of said substrate, and a transistor having an electrode in contact with said portion of said substrate through said first opening.
Claim 2
Dependent Claim
104 words
A semiconductor device comprising a substrate, a metal-insulator-metal (MIM) capacitor overlying said substrate and having a bottom electrode, a capacitor insulator film and a top electrode, a first dielectric film covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode, a second dielectric film formed on said first dielectric film and said substrate, said second dielectric film being made from a different material than said first dielectric film and having a first opening for exposing a portion of said substrate, and a transistor having an electrode in contact with said portion of said substrate through said first opening.
Claim 3
Dependent Claim
39 words
A semiconductor device as defined in claim 1, further comprising a third dielectric film disposed between said bottom electrode and said substrate, said third dielectric film having an edge substantially flush with said edge of said first dielectric film.
Claim 4
Dependent Claim
17 words
A semiconductor device as defined in claim 1, wherein said first dielectric film is made of SiNx.
Claim 5
Dependent Claim
116 words
A semiconductor device, comprising: a substrate; a metal-insulator-metal (MIM) capacitor disposed over said substrate, said MIM capacitor having a bottom electrode, a high permittivity layer, and a top electrode; a first dielectric film at least partially covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode; a second dielectric film disposed on said first dielectric film, said second dielectric film being made from a different material than said first dielectric film; a first opening formed in said first and second dielectric films that exposes a portion of said top electrode; and a second opening formed in said first and second dielectric films that exposes a portion of said bottom electrode.
Claim 6
Dependent Claim
116 words
A semiconductor device, comprising: a substrate; a metal-insulator-metal (MIM) capacitor disposed over said substrate, said MIM capacitor having a bottom electrode, a high permittivity layer, and a top electrode; a first dielectric film at least partially covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode; a second dielectric film disposed on said first dielectric film, said second dielectric film being made from a different material than said first dielectric film; a first opening formed in said first and second dielectric films that exposes a portion of said top electrode; and a second opening formed in said first and second dielectric films that exposes a portion of said bottom electrode.
Claim 7
Dependent Claim
20 words
The semiconductor device of claim 4, further comprising: a third dielectric film disposed between said substrate and said MIM capacitor.
Claim 8
Dependent Claim
30 words
The semiconductor device of claim 4, wherein said first dielectric film includes a material selected from the group consisting of at least one of: SiO 2 and SiN x .
Claim 9
Dependent Claim
15 words
The semiconductor device of claim 4 further comprising: an FET transistor disposed on said substrate.
Claim 10
Dependent Claim
17 words
The semiconductor device of claim 4, wherein said substrate includes at least one of: GaAs and InP.
References Cited (Backward Citations)
JPH03136362A
Cited
JPH06314768A
Cited
JPH05343615A
Cited
US5561307A
Cited
JPH06125058A
Cited
US5624864A
Cited
JPH07235639A
Cited
US5670808A
Cited
JPH08236719A
Cited
US5818079A
Cited
US5721700A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |