US5670808A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal oxide capacitor with a WNX electrode
Assignee: Toshiba Corp
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Filing: 1996-01-25
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Granted: 1997-09-23
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Expires: 2016-01-25
Abstract
Abstract A semiconductor device in which an SiO 2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
Inventors
- 👤 Kazuya Nishihori
- 👤 Yoshiaki Kitaura
- 👤 Yoshikazu Tanabe
- 👤 Tomonori Aoyama
- 👤 Kyoichi Suguro
- 👤 Kumi Okuwada
- 👤 Shuichi Komatsu
- 👤 Kazuhide Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:38
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/811; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/682; H10D84/01; H10D84/813
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
68 words
A semiconductor device comprising a capacitor having first and second electrodes, a dielectric film comprising an oxide interposed between said electrodes, and a first contacting surface comprising tungsten nitride interposed between, and contacting, both said dielectric film and said first electrode, wherein said tungsten nitride of said first contacting surface is expressed by WN x and its coefficient x falls in a range of from 0.05 to 0.5.
Claim 2
Dependent Claim
68 words
A semiconductor device comprising a capacitor having first and second electrodes, a dielectric film comprising an oxide interposed between said electrodes, and a first contacting surface comprising tungsten nitride interposed between, and contacting, both said dielectric film and said first electrode, wherein said tungsten nitride of said first contacting surface is expressed by WN x and its coefficient x falls in a range of from 0.05 to 0.5.
Claim 3
Dependent Claim
25 words
The device according to claim 1, wherein said second electrode is in contact with said dielectric film by a second contacting surface comprising tungsten nitride.
Claim 4
Dependent Claim
43 words
The device according to claim 1, wherein said first electrode includes a tungsten nitride layer, a titanium nitride layer, and a barrier metal layer interposed between said tungsten nitride layer and titanium nitride layer, said first contacting surface being said tungsten nitride layer.
Claim 5
Dependent Claim
17 words
The device according to claim 1, wherein said dielectric film is made of a perovskite dielectric substance.
Claim 6
Dependent Claim
29 words
The device according to claim 4, wherein said capacitor is designed to be used at a frequency of 800 MHz or more, and said perovskite dielectric substance is paraelectric.
Claim 7
Dependent Claim
13 words
The device according to claim 5, wherein said perovskite dielectric substance contains strontium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-22 | 2001-03-24 | 2001-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-22 | 2005-03-24 | 2005-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-22 | 2009-03-24 | 2009-09-23 | $7700.00 | Window Closed / Lapsed |