US5721700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile semiconductor memory device in which applied voltage to ferroelectric capacitor is adjusted
Assignee: NEC Corp
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Filing: 1996-11-21
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Granted: 1998-02-24
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Expires: 2016-11-21
Abstract
Abstract A semiconductor memory device is composed of a plurality of memory cells. Each memory cell is comprised of a field effect transistor formed on a semiconductor substrate, wherein said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions. The memory cell is further composed of a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes. In this case, an area of said ferroelectric capacitor is smaller than an area of one of said gate electrode and an active region of said gate electrode such that an electric field applied to said ferroelectric film is larger than a coercive electric field of said ferroelectric film and an electric field applied to said gate insulating film is smaller than a breakdown electric field of said gate insulating film.
Inventors
- 👤 Yuukoh Katoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:45
CPC Classifications
H; H10; H10B; H10B53/00
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
153 words
A semiconductor memory device composed of a plurality of memory cells, each of which comprises: a field effect transistor formed on a semiconductor substrate, wherein said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions; and a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes, wherein an area of said ferroelectric capacitor is smaller than an area of one of said gate electrode and an active region of said gate electrode such that an electric field applied to said ferroelectric film is larger than a coercive electric field of said ferroelectric film and an electric field applied to said gate insulating film is smaller than a breakdown electric field of said gate insulating film.
Claim 2
Dependent Claim
153 words
A semiconductor memory device composed of a plurality of memory cells, each of which comprises: a field effect transistor formed on a semiconductor substrate, wherein said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions; and a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes, wherein an area of said ferroelectric capacitor is smaller than an area of one of said gate electrode and an active region of said gate electrode such that an electric field applied to said ferroelectric film is larger than a coercive electric field of said ferroelectric film and an electric field applied to said gate insulating film is smaller than a breakdown electric field of said gate insulating film.
Claim 3
Dependent Claim
119 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: a first insulating film provided on said substrate including said gate electrode structure, wherein said ferroelectric capacitor is provided on said first insulating film, said ferroelectric film is provided on a portion of said lower electrode, and said upper electrode is provided on a portion of said ferroelectric film above said lower electrode; a second insulating film provided on said first insulating film including said ferroelectric capacitor; a first wiring pattern provided on said second insulating film to connect between said gate electrode and said lower electrode; and a second wiring pattern provided on said second insulating film and connected to said upper electrode.
Claim 4
Dependent Claim
68 words
A semiconductor memory device according to claim 1, wherein said ferroelectric capacitor includes: said lower electrode provided directly on said gate electrode with the same area as that of said gate electrode; said ferroelectric film provided directly on said lower electrode with the same area as that of said gate electrode; and said upper electrode provided directly on a portion of said ferroelectric film above said lower electrode.
Claim 5
Dependent Claim
109 words
A semiconductor memory device according to claim 1, wherein said ferroelectric capacitor includes: said lower electrode provided directly on said gate electrode with the same area as that of said gate electrode; an insulative preventing film for preventing diffusion of a ferroelectric material; said ferroelectric film provided on said preventing film, wherein said ferroelectric film is used in common to another memory cell; and said upper electrode provided directly on a portion of said ferroelectric film above said lower electrode, and wherein said memory cell includes: an insulating film provided on said ferroelectric capacitor; and a wiring pattern provided on said insulating film and connected to said upper electrode.
Claim 6
Dependent Claim
108 words
A semiconductor memory device according to claim 1, wherein said ferroelectric capacitor includes: said lower electrode provided directly on said gate electrode with the same area as that of said gate electrode; an insulative preventing film for preventing diffusion of a ferroelectric material; and said ferroelectric film provided on said preventing film, wherein said ferroelectric film is used in common to another memory cell, and wherein said memory cell includes: an insulating film provided on said ferroelectric capacitor; and a wiring pattern provided on said insulating film and connected to said ferroelectric film above said lower electrode such that said wiring pattern is used as said upper electrode.
Claim 7
Dependent Claim
110 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: a first insulating film provided on said substrate including said gate electrode structure; said lower electrode provided on a portion of said first insulating film; said ferroelectric film provided on said first insulating film including said lower electrode such that said ferroelectric film is used in common by another memory cell; said upper electrode provided on a portion of said ferroelectric film above said lower electrode; a second insulating film provided on said ferroelectric film including said upper electrode; and a wiring pattern provided on said second insulating film and connected to said upper electrode.
Claim 8
Dependent Claim
107 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: a first insulating film provided on said substrate including said gate electrode structure; said lower electrode provided on a portion of said first insulating film; said ferroelectric film provided on said lower electrode such that said ferroelectric film as has the same area as said lower electrode; said upper electrode provided on a portion of said ferroelectric film above said lower electrode; a second insulating film provided on said first insulating film including said ferroelectric capacitor; and a wiring pattern provided on said second insulating film and connected to said upper electrode.
Claim 9
Dependent Claim
105 words
A semiconductor memory device according to claim 1, wherein said ferroelectric capacitor includes: said lower electrode provided directly on a portion of said gate electrode; said ferroelectric film provided on said lower electrode such that said ferroelectric film has the same area as said lower electrode; and said upper electrode provided on said ferroelectric film above said lower electrode such that said ferroelectric film has the same area as said lower electrode, and wherein said memory cell includes: an insulating film provided on said gate electrode including said ferroelectric capacitor; and a wiring pattern provided on said insulating film and connected to said upper electrode.
Claim 10
Dependent Claim
94 words
A semiconductor memory device according to claim 1, wherein said ferroelectric capacitor includes: said lower electrode provided directly on a portion of said gate electrode; and said ferroelectric film provided on said lower electrode such that said ferroelectric film has the same area as said lower electrode, and wherein said memory cell includes: an insulating film provided on said gate electrode including said ferroelectric film; and a wiring pattern provided on said insulating film and connected to said ferroelectric film above said lower electrode such that said wiring pattern functions as said upper electrode.
Claim 11
Dependent Claim
101 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: a first insulating film provided on said substrate including said gate electrode structure; said lower electrode provided on a portion of said first insulating film connected to said gate electrode; said ferroelectric film provided on a portion of said lower electrode; said upper electrode provided on a portion of said ferroelectric film above said lower electrode; a second insulating film provided on said first insulating film including said ferroelectric capacitor; and a wiring pattern provided on said second insulating film and connected to said upper electrode.
Claim 12
Dependent Claim
82 words
A semiconductor memory device according to claim 1, wherein said memory cell includes: said lower electrode provided on said gate electrode such that said lower electrode has the same area as said gate electrode; an insulating film provided on said substrate including said lower electrode to have a contact hole on said lower electrode; said ferroelectric film provided to fill said contact hole; and a wiring pattern provided on said ferroelectric film such that said wiring pattern functions as said upper electrode.
Claim 13
Dependent Claim
87 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: a first insulating film provided on said substrate including said gate electrode structure; said lower electrode provided on a portion of said first insulating film and connected to said gate electrode; a second insulating film provided on said first insulating film including said lower electrode to have a contact hole on said lower electrode; said ferroelectric film provided to fill said contact hole; and said upper electrode provided on said ferroelectric film.
Claim 14
Dependent Claim
70 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: an insulating film provided on said substrate including said gate electrode structure to have a contact hole on said gate electrode; said lower electrode provided to fill said contact hole; said ferroelectric film provided on said insulating film including said lower electrode; and said upper electrode provided on said ferroelectric film above said lower electrode.
Claim 15
Dependent Claim
91 words
A semiconductor memory device according to claim 1, wherein said each memory cell further includes: a first insulating film provided on said substrate including said gate electrode structure; said lower electrode provided on a portion of said first insulating film and connected to said gate electrode; a second insulating film provided on said first insulating film including said lower electrode to have a contact hole on said lower electrode; said ferroelectric film provided on said second insulating film; and said upper electrode provided on said ferroelectric film above said lower electrode.
Claim 16
Dependent Claim
137 words
A semiconductor memory device composed of a plurality of memory cells, each of which comprises: a field effect transistor formed on a semiconductor substrate, where said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions; and a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes, wherein a ratio of a thickness of said ferroelectric capacitive ferroelectric film to a thickness of said gate insulating film is in a range of 1 to 300, and a ratio of an area of said ferroelectric capacitor to an area of said gate electrode is in a range of 0.01 to 5.
Claim 17
Dependent Claim
137 words
A semiconductor memory device composed of a plurality of memory cells, each of which comprises: a field effect transistor formed on a semiconductor substrate, where said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions; and a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes, wherein a ratio of a thickness of said ferroelectric capacitive ferroelectric film to a thickness of said gate insulating film is in a range of 1 to 300, and a ratio of an area of said ferroelectric capacitor to an area of said gate electrode is in a range of 0.01 to 5.
Claim 18
Dependent Claim
154 words
A semiconductor memory device composed of a plurality of memory cells, each of which comprises: a field effect transistor formed on a semiconductor substrate, where said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions, wherein an area of said gate electrode and a thickness of said gate insulating film are determined such that an electric field applied to said gate insulating film is smaller than a breakdown electric field of said gate insulating film; and a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes, wherein an area of said ferroelectric capacitor is determined such that an electric field applied to said ferroelectric film is larger than a coercive electric field of said ferroelectric film.
Claim 19
Dependent Claim
154 words
A semiconductor memory device composed of a plurality of memory cells, each of which comprises: a field effect transistor formed on a semiconductor substrate, where said field effect transistor is composed of a gate electrode structure which is composed of a gate insulating film and a gate electrode provided thereon, and source and drain regions, wherein an area of said gate electrode and a thickness of said gate insulating film are determined such that an electric field applied to said gate insulating film is smaller than a breakdown electric field of said gate insulating film; and a ferroelectric capacitor composed of a lower electrode connected to said gate electrode, an upper electrode, and a capacitive ferroelectric film disposed between said upper and lower electrodes, wherein an area of said ferroelectric capacitor is determined such that an electric field applied to said ferroelectric film is larger than a coercive electric field of said ferroelectric film.
References Cited (Backward Citations)
JPH0332066A
Cited
JPH04177699A
Cited
US5495117A
Cited
JPH05145077A
Cited
US5307305A
Cited
JPH05304299A
Cited
US5481490A
Cited
US5523964A
Cited
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