US6144051A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a metal-insulator-metal capacitor
Assignee: NEC Corp
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Filing: 1998-05-29
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Granted: 2000-11-07
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Expires: 2018-05-29
Abstract
Abstract A method for manufacturing a semiconductor device having a metal-insulator-metal (MIM) capacitor comprises the steps of forming a first dielectric film on a substrate, forming a MIM capacitor on the first dielectric film, forming a second dielectric film covering the MIM capacitor, selectively removing the first and second dielectric films to expose the substrate surface, surface treating using a hydrochloric acid solution, forming a third dielectric film on the second dielectric film and the substrate, and forming a transistor on the third dielectric film. The second dielectric film protects the capacitor insulator film of the MIM capacitor.
Inventors
- 👤 Takeshi B Nishimura
- 👤 Naotaka Iwata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:43
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
A semiconductor device comprising a substrate, a metal-insulator-metal (MIM) capacitor overlying said substrate and having a bottom electrode, a capacitor insulator film and a top electrode, a first dielectric film covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode, a second dielectric film formed on said first dielectric film and said substrate, said second dielectric film being made from a different material than said first dielectric film and having a first opening for exposing a portion of said substrate, and a transistor having an electrode in contact with said portion of said substrate through said first opening.
Claim 2
Dependent Claim
104 words
A semiconductor device comprising a substrate, a metal-insulator-metal (MIM) capacitor overlying said substrate and having a bottom electrode, a capacitor insulator film and a top electrode, a first dielectric film covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode, a second dielectric film formed on said first dielectric film and said substrate, said second dielectric film being made from a different material than said first dielectric film and having a first opening for exposing a portion of said substrate, and a transistor having an electrode in contact with said portion of said substrate through said first opening.
Claim 3
Dependent Claim
39 words
A semiconductor device as defined in claim 1, further comprising a third dielectric film disposed between said bottom electrode and said substrate, said third dielectric film having an edge substantially flush with said edge of said first dielectric film.
Claim 4
Dependent Claim
17 words
A semiconductor device as defined in claim 1, wherein said first dielectric film is made of SiNx.
Claim 5
Dependent Claim
116 words
A semiconductor device, comprising: a substrate; a metal-insulator-metal (MIM) capacitor disposed over said substrate, said MIM capacitor having a bottom electrode, a high permittivity layer, and a top electrode; a first dielectric film at least partially covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode; a second dielectric film disposed on said first dielectric film, said second dielectric film being made from a different material than said first dielectric film; a first opening formed in said first and second dielectric films that exposes a portion of said top electrode; and a second opening formed in said first and second dielectric films that exposes a portion of said bottom electrode.
Claim 6
Dependent Claim
116 words
A semiconductor device, comprising: a substrate; a metal-insulator-metal (MIM) capacitor disposed over said substrate, said MIM capacitor having a bottom electrode, a high permittivity layer, and a top electrode; a first dielectric film at least partially covering said MIM capacitor and having an edge protruding from an edge of said bottom electrode; a second dielectric film disposed on said first dielectric film, said second dielectric film being made from a different material than said first dielectric film; a first opening formed in said first and second dielectric films that exposes a portion of said top electrode; and a second opening formed in said first and second dielectric films that exposes a portion of said bottom electrode.
Claim 7
Dependent Claim
20 words
The semiconductor device of claim 4, further comprising: a third dielectric film disposed between said substrate and said MIM capacitor.
Claim 8
Dependent Claim
30 words
The semiconductor device of claim 4, wherein said first dielectric film includes a material selected from the group consisting of at least one of: SiO 2 and SiN x .
Claim 9
Dependent Claim
15 words
The semiconductor device of claim 4 further comprising: an FET transistor disposed on said substrate.
Claim 10
Dependent Claim
17 words
The semiconductor device of claim 4, wherein said substrate includes at least one of: GaAs and InP.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |