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US6139994A Expired / Lapsed US ⏱️ 0.0 years remaining

Use of intersecting subresolution features for microlithography

Assignee: ASML Netherlands BV
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Filing: 1999-06-25
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Granted: 2000-10-31
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Expires: 2019-06-25
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Abstract

Abstract A method for creating an image on an image plane utilizing a photomask comprised of a plurality of intersecting subresolution features. Energy created by an energy source is projected through the subresolution features which diffract the light to produce constructive or positive interference thereby resulting in an image being formed on the image plane that is different than the image or pattern of subresolution features on the photomask.

Inventors

  • 👤 Doug Van Den Broeke
  • 👤 Fung Chen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 22:19
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F1/00; G03F1/50

Claims Analysis

Total Claims: 37
Claim 1
Independent Claim 75 words
A photomask comprised of an attenuator and a substrate for producing an image on an image plane, said attenuator having a pattern formed therein through which energy may pass, said pattern in said attenuator comprised of a plurality of intersecting subresolution features, wherein said energy passing through said intersecting subresolution features and said substrate creates an image on said image plane that is a different shape than the shape of said pattern in said attenuator.
Claim 2
Dependent Claim 75 words
A photomask comprised of an attenuator and a substrate for producing an image on an image plane, said attenuator having a pattern formed therein through which energy may pass, said pattern in said attenuator comprised of a plurality of intersecting subresolution features, wherein said energy passing through said intersecting subresolution features and said substrate creates an image on said image plane that is a different shape than the shape of said pattern in said attenuator.
Claim 3
Dependent Claim 16 words
The photomask of claim 1, wherein said plurality of said subresolution features are rectangular in shape.
Claim 4
Dependent Claim 19 words
The photomask of claim 2, wherein said plurality of intersecting subresolution features intersect at each of their longitudinal midpoints.
Claim 5
Dependent Claim 30 words
The photomask of claim 3, wherein said plurality of said intersecting subresolution features are angularly positioned such that the angles formed between each of said subresolution features are approximately equal.
Claim 6
Dependent Claim 27 words
The photomask of claim 4, wherein each of said rectangularly shaped subresolution features is substantially identical, and said image created on said image plane is substantially circular.
Claim 7
Dependent Claim 42 words
The photomask of claim 3, wherein said plurality intersecting subresolution features is comprised of two short rectangular subresolution features and two long rectangular subresolution features, wherein said long rectangular subresolution features are approximately twice as long as said short rectangular subresolution features.
Claim 8
Dependent Claim 54 words
The photomask of claim 6, wherein said two short rectangular subresolution features are angularly positioned approximately perpendicular to one another, and said two long rectangular subresolution features angular positioned such that they intersect at an angle other than approximately 90 degrees, and said image created at said image plane is substantially elliptical in shape.
Claim 9
Dependent Claim 21 words
The photomask of claim 3, wherein said plurality intersecting subresolution features is comprised of three substantially identical rectangularly shaped subresolution features.
Claim 10
Dependent Claim 33 words
The photomask of claim 8, wherein said plurality of rectangular subresolution features intersect at angles other than approximately 90 degrees, and said image created at said image plane is substantially elliptical in shape.
Claim 11
Dependent Claim 29 words
The photomask of claim 1 wherein said image plane is a layer of photosensitive material and said image created at said image plane is created in said photosensitive material.
Claim 12
Dependent Claim 31 words
The photomask of claim 1 wherein said layer of photosensitive material resides on a semiconductor wafer and said image create at said image plane is also created in said semiconductor wafer.
Claim 13
Dependent Claim 14 words
The photomask of claim 1 wherein said photomask is an attenuated phase shift mask.
Claim 14
Dependent Claim 12 words
The photomask of claim 1 wherein said photomask is a binary mask.
Claim 15
Dependent Claim 12 words
The photomask of claim 13, wherein said subresolution features are rectangularly shaped.
Claim 16
Dependent Claim 89 words
The photomask of claim 14, wherein said plurality of said subresolution features is comprised of a first subresolution feature intersecting a second subresolution feature at their longitudinal midpoints, a third subresolution feature intersecting said first and said second subresolution features other than at said longitudinal midpoints, and a fourth subresolution feature intersecting said first and said second subresolution features other than at said longitudinal midpoints, said third and fourth subresolution features not intersecting with each other, wherein the image formed at said image plane is substantially elliptical in shape.
Claim 17
Dependent Claim 29 words
The photomask of claim 13 wherein said image plane is a layer of photosensitive material and said image created at said image plane is created in said photosensitive material.
Claim 18
Dependent Claim 31 words
The photomask of claim 13 wherein said layer of photosensitive material resides on a semiconductor wafer and said image create at said image plane is also created in said semiconductor wafer.
Claim 19
Dependent Claim 14 words
The photomask of claim 13 wherein said photomask is an attenuated phase shift mask.
Claim 20
Dependent Claim 55 words
The method of claim 18 wherein said pattern of said intersecting subresolution features is comprises of four approximately identically shaped rectangular features, said rectangular features intersecting at approximately each of their longitudinal midpoints and angularly positioned at approximately forty-five degree angles to one another, wherein said image formed at said image plane is approximately circular.
Claim 21
Dependent Claim 15 words
The method of claim 18, wherein said subresolution features intersect at a plurality of points.
Claim 22
Dependent Claim 12 words
The photomask of claim 13 wherein said photomask is a binary mask.
Claim 23
Dependent Claim 20 words
The photomask of claim 1, wherein said plurality of patterns are comprised of subresolution features which are rectangular in shape.
Claim 24
Dependent Claim 83 words
A photomask comprised of an attenuator and a substrate, said attenuator residing on said substrate and inhibiting the transmission energy through said mask to an image plane, said attenuator having an aperture formed therein through which energy may be transmitted, said aperture comprised of a plurality of subresolution features, said subresolution features intersecting at a plurality of points, wherein the energy passing through said aperture creates an image on said image plane that is different in shape than the shape of said aperture.
Claim 25
Dependent Claim 83 words
A photomask comprised of an attenuator and a substrate, said attenuator residing on said substrate and inhibiting the transmission energy through said mask to an image plane, said attenuator having an aperture formed therein through which energy may be transmitted, said aperture comprised of a plurality of subresolution features, said subresolution features intersecting at a plurality of points, wherein the energy passing through said aperture creates an image on said image plane that is different in shape than the shape of said aperture.
Claim 26
Dependent Claim 21 words
The photomask of claim 14, wherein at least one subresolution feature does not intersect with at least one other subresolution feature.
Claim 27
Independent Claim 100 words
A method for creating an image on an image plane from a photomask comprised of a substrate and attenuator material comprising the steps of: forming in said attenuator material a pattern comprised of a plurality of intersecting subresolution features through which energy may pass, placing said photomask between an energy source and said image plane, and energizing said energy source, wherein said energy from said energy source passing through said pattern of subresolution features forms an image on said image plane that is different in shape than the shape of said pattern of subresolution features formed in said attenuator material.
Claim 28
Independent Claim 100 words
A method for creating an image on an image plane from a photomask comprised of a substrate and attenuator material comprising the steps of: forming in said attenuator material a pattern comprised of a plurality of intersecting subresolution features through which energy may pass, placing said photomask between an energy source and said image plane, and energizing said energy source, wherein said energy from said energy source passing through said pattern of subresolution features forms an image on said image plane that is different in shape than the shape of said pattern of subresolution features formed in said attenuator material.
Claim 29
Dependent Claim 89 words
The method of claim 22, wherein said plurality of said subresolution features is comprised of a first subresolution feature intersecting a second subresolution feature at their longitudinal midpoints, a third subresolution feature intersecting said first and said second subresolution features other than at said longitudinal midpoints, and a fourth subresolution feature intersecting said first and said second subresolution features other than at said longitudinal midpoints, said third and fourth subresolution features not intersecting with each other, wherein the image formed at said image plane is substantially elliptical in shape.
Claim 30
Dependent Claim 77 words
A photomask comprised of an attenuator and a substrate for producing an image on an image plane, said attenuator having a plurality of patterns formed therein through which energy may pass, said patterns in said attenuator comprised of a plurality of intersecting subresolution features, wherein said energy passing through said intersecting subresolution features and said substrate creates an image on said image plane that is a different shape than the shape of said patterns in said attenuator.
Claim 31
Dependent Claim 77 words
A photomask comprised of an attenuator and a substrate for producing an image on an image plane, said attenuator having a plurality of patterns formed therein through which energy may pass, said patterns in said attenuator comprised of a plurality of intersecting subresolution features, wherein said energy passing through said intersecting subresolution features and said substrate creates an image on said image plane that is a different shape than the shape of said patterns in said attenuator.
Claim 32
Dependent Claim 14 words
The photomask of claim 26, wherein said plurality of patterns intersect with one another.
Claim 33
Dependent Claim 14 words
The photomask of claim 26, wherein said plurality of patterns are substantially the same.
Claim 34
Dependent Claim 29 words
The photomask of claim 26 wherein said image plane is a layer of photosensitive material and said image created at said image plane is created in said photosensitive material.
Claim 35
Dependent Claim 31 words
The photomask of claim 26 wherein said layer of photosensitive material resides on a semiconductor wafer and said image created at said image plane is also created in said semiconductor wafer.
Claim 36
Dependent Claim 14 words
The photomask of claim 26 wherein said photomask is an attenuated phase shift mask.
Claim 37
Dependent Claim 12 words
The photomask of claim 26 wherein said photomask is a binary mask.

References Cited (Backward Citations)

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US5208124A Cited
US5194346A Cited
US5208125A Cited
US5268244A Cited
US5418095A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-10-31 2004-05-01 2004-10-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-10-31 2008-05-01 2008-10-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-10-31 2012-05-01 2012-10-31 $7700.00 Window Closed / Lapsed

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