Semiconductor memory device with reduced consumption of standby current in refresh mode

Claim 1

A semiconductor memory device comprising: a self-refresh state control unit for receiving a self-refresh command signal from a state machine, and generating a self-refresh signal, based on the received self-refresh command signal; a ring oscillator unit for receiving the self-refresh signal from the self-refresh state control unit, and setting a reference clock interval; a frequency divider unit for receiving the self-refresh signal from the self-refresh state control unit and the set reference clock interval from the ring oscillator unit, and generating a plurality of clock signals having different frequencies; a self-refresh request control unit for receiving a selected one of the clock signals from the frequency divider unit, and generating a self-refresh request signal, to be used as a reference signal for a refresh operation, based on the received clock signal; a DC voltage generating unit for generating a variety of voltages to be used for operation of each unit, in such a fashion that it is periodically turned on and off in an enable state of the self-refresh signal; and a DC voltage source control circuit for receiving the self-refresh signal from the self-refresh state control unit along with a part of the clock signals outputted from the frequency divider unit, and turning on and off the DC voltage generating unit, wherein the DC voltage source control circuit is adapted to sense a standby mode during a self-refresh operation, and turn off the DC voltage generating unit, thereby preventing the consumption of electric power resulting from a continued supply of current to units where no operation is conducted in the standby operation state.