US6136641A
Expired / Lapsed
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Method for manufacturing capacitor of semiconductor device including thermal treatment to dielectric film under hydrogen atmosphere
Assignee: Samsung Electronics Co Ltd
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Filing: 1998-08-13
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Granted: 2000-10-24
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Expires: 2018-08-13
Abstract
Abstract A capacitor fabricating method for a semiconductor device where a dielectric film is thermally treated under hydrogen atmosphere to improve interface characteristics between the dielectric film and an electrode. In the method, a lower electrode is formed on a semiconductor substrate. A dielectric film is formed on the lower electrode. The dielectric film is thermally treated under hydrogen atmosphere. An upper electrode is formed on the dielectric film, thereby completing formation of the capacitor. The thermal treatment under the hydrogen atmosphere is performed at a temperature of 300 to 600° C. using H 2 gas or H 2 plasma for 5 to 60 minutes. Thus, the density of an interface trap between the electrode and the dielectric film of the capacitor is reduced.
Inventors
- 👤 Seok-jun Won
- 👤 Kab-jin Nam
- 👤 Young-wook Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:43
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393; H10P14/69394; H10P14/69398; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
53 words
A capacitor fabricating method for a semiconductor device comprising the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric film on said lower electrode; thermally treating said dielectric film under hydrogen atmosphere after the step of forming the dielectric film; and forming an upper electrode on said dielectric film.
Claim 2
Dependent Claim
53 words
A capacitor fabricating method for a semiconductor device comprising the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric film on said lower electrode; thermally treating said dielectric film under hydrogen atmosphere after the step of forming the dielectric film; and forming an upper electrode on said dielectric film.
Claim 3
Dependent Claim
28 words
The method according to claim 1, wherein said step of thermally treating the dielectric film under hydrogen atmosphere is performed using H 2 gas or H 2 plasma.
Claim 4
Dependent Claim
35 words
The method according to claim 2, wherein said step of thermally treating the dielectric film under hydrogen atmosphere is performed at a temperature of between approximately 300 to 600° C. for 5 to 60 minutes.
Claim 5
Dependent Claim
35 words
The method according to claim 3, wherein said step of thermally treating the dielectric film under hydrogen atmosphere is performed at a temperature of between approximately 300 to 500° C. for 5 to 30 minutes.
Claim 6
Dependent Claim
32 words
The method according to claim 1, wherein said lower electrode is formed of a material selected from the group consisting of impurity-doped polysilicon, metal, metal silicide, metal nitride or any combination thereof.
Claim 7
Dependent Claim
83 words
The method according to claim 1, wherein said dielectric film is formed of a material selected from the group consisting of a silicon oxide film (SiO 2 ), a silicon nitride film (Si 3 N 4 ), a tantalum oxide film (Ta 2 O 5 ), a titanium oxide film (TiO 2 ), an aluminum oxide film (Al 2 O 3 ), PZT(PbZr x Ti 1-x O 3 ), BST(Ba x Sr 1-x TiO 3 ), ST(SrTiO 3 ), or any combination thereof.
Claim 8
Dependent Claim
32 words
The method according to claim 1, wherein said upper electrode is formed of a material selected from the group consisting of impurity-doped polysilicon, metal, metal silicide, metal nitride or any combination thereof.
Claim 9
Dependent Claim
53 words
The method according to claim 1, further comprising the steps of: removing a native oxide film formed on a surface of said lower electrode before the step of forming said dielectric film to form a treated structure; and processing RTN (rapid thermal nitration) on the treated structure to form a further treated structure.
Claim 10
Dependent Claim
21 words
The method according to claim 8, further comprising the step of processing RTO (rapid thermal oxidation) on the further treated structure.
Claim 11
Dependent Claim
31 words
The method according to claim 1, further comprising the step of thermally treating the dielectric film under oxygen atmosphere before the step of thermally treating the dielectric film under hydrogen atmosphere.
Claim 12
Dependent Claim
51 words
The method according to claim 10, wherein the step of thermally treating the dielectric film under oxygen atmosphere is performed using a material selected from the group consisting of a wet O 2 , a dry O 2 , N 2 O gas or a plasma of each of said gases.
Claim 13
Dependent Claim
35 words
The method according to claim 11, wherein said step of thermally treating the dielectric film under oxygen atmosphere is performed at a temperature of between approximately 300 to 1000° C. for 5 to 60 minutes.
Claim 14
Dependent Claim
32 words
The method according to claim 1, further comprising the step of thermally treating the dielectric film under inert gas atmosphere before the step of thermally treating the dielectric film under hydrogen atmosphere.
Claim 15
Dependent Claim
36 words
The method according to claim 13, wherein the step of thermally treating the dielectric film under inert gas atmosphere is performed at a temperature of between approximately 500 to 900° C. for 5 to 60 minutes.
Claim 16
Dependent Claim
72 words
A capacitor fabricating method for a semiconductor device comprising the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric film on said lower electrode; forming an upper electrode on said dielectric film to form a resultant structure with the lower electrode and dielectric film; and thermally treating the resultant structure on which said upper electrode is formed, under hydrogen atmosphere after the step of forming the upper electrode.
Claim 17
Dependent Claim
72 words
A capacitor fabricating method for a semiconductor device comprising the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric film on said lower electrode; forming an upper electrode on said dielectric film to form a resultant structure with the lower electrode and dielectric film; and thermally treating the resultant structure on which said upper electrode is formed, under hydrogen atmosphere after the step of forming the upper electrode.
Claim 18
Dependent Claim
28 words
The method according to claim 15, wherein said step of thermally treating the resultant structure under hydrogen atmosphere is performed using H 2 gas or H 2 plasma.
Claim 19
Dependent Claim
35 words
The method according to claim 16, wherein said step of thermally treating the resultant structure under hydrogen atmosphere is performed at a temperature of between approximately 300 to 600° C. for 5 to 60 minutes.
Claim 20
Dependent Claim
35 words
The method according to claim 17, wherein said step of thermally treating the resultant structure under hydrogen atmosphere is performed at a temperature of between approximately 300 to 500° C. for 5 to 30 minutes.
Claim 21
Dependent Claim
32 words
The method according to claim 15, wherein said lower electrode is formed of a material selected from the group consisting of impurity-doped polysilicon, metal, metal silicide, metal nitride or any combination thereof.
Claim 22
Dependent Claim
83 words
The method according to claim 15, wherein said dielectric film is formed of a material selected from the group consisting of a silicon oxide film (SiO 2 ), a silicon nitride film (Si 3 N 4 ), a tantalum oxide film (Ta 2 O 5 ), a titanium oxide film (TiO 2 ), an aluminum oxide film (Al 2 O 3 ), PZT(PbZr x Ti 1-x O 3 ), BST(Ba x Sr 1-x TiO 3 ), ST(SrTiO 3 ), or any combination thereof.
Claim 23
Dependent Claim
32 words
The method according to claim 15, wherein said upper electrode is formed of a material selected from the group consisting of impurity-doped polysilicon, metal, metal silicide, metal nitride or any combination thereof.
Claim 24
Dependent Claim
56 words
The method according to claim 15, further comprising the steps of: removing a native oxide film formed on the surface of said lower electrode before the step of forming said dielectric film to form a treated lower electrode; and processing RTN (rapid thermal nitration) on the treated lower electrode to form a further treated lower electrode.
Claim 25
Dependent Claim
22 words
The method according to claim 22, further comprising the step of processing RTO (rapid thermal oxidation) on the further treated lower electrode.
Claim 26
Dependent Claim
27 words
The method according to claim 15, further comprising the step of thermally treating the dielectric film under oxygen atmosphere before the step of forming the upper electrode.
Claim 27
Dependent Claim
51 words
The method according to claim 24, wherein the step of thermally treating the dielectric film under oxygen atmosphere is performed using a material selected from the group consisting of a wet O 2 , a dry O 2 , N 2 O gas or a plasma of each of said gases.
Claim 28
Dependent Claim
35 words
The method according to claim 25, wherein the step of thermally treating the dielectric film under oxygen atmosphere is performed at a temperature of between approximately 300 to 1000° C. for 5 to 60 minutes.
Claim 29
Dependent Claim
25 words
The method according to claim 15, further comprising the step of thermally treating the dielectric film under inert gas atmosphere before forming said upper electrode.
Claim 30
Dependent Claim
36 words
The method according to claim 27, wherein the step of thermally treating the dielectric film under inert gas atmosphere is performed at a temperature of between approximately 500 to 900° C. for 5 to 60 minutes.
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