US5811872A
Expired / Lapsed
US
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Semiconductor device and method of farbricating the same
Assignee: NTT Inc
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Filing: 1996-01-31
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Granted: 1998-09-22
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Expires: 2016-01-31
Abstract
Abstract A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
Inventors
- 👤 Katsuyuki Machida
- 👤 Katsumi Murase
- 👤 Nobuhiro Shimoyama
- 👤 Toshiaki Tsuchiya
- 👤 Junichi Takahashi
- 👤 Kazushige Minegishi
- 👤 Yasuo Takahashi
- 👤 Hideo Namatsu
- 👤 Kazuo Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69215; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/077; H10W20/081; H10W20/093; H10W20/096; H10W20/097; H10W20/40; H10W20/45; H10W20/48; H10P14/6336
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
45 words
A semiconductor device comprising: an interlevel film having a first dielectric film containing dangling bonds and a bonded group of Si and hydrogen adapted to react with water diffused in said first dielectric film; and a second dielectric film formed on said first dielectric film.
Claim 2
Dependent Claim
45 words
A semiconductor device comprising: an interlevel film having a first dielectric film containing dangling bonds and a bonded group of Si and hydrogen adapted to react with water diffused in said first dielectric film; and a second dielectric film formed on said first dielectric film.
Claim 3
Dependent Claim
28 words
A device according to claim 1, wherein a third dielectrics film having different characteristics from those of said second dielectrics film is formed on said second dielectrics film.
Claim 4
Dependent Claim
16 words
A device according to claim 2, wherein said first dielectrics film is a silicon oxide film.
Claim 5
Dependent Claim
16 words
A device according to claim 3, wherein said third dielectrics film is a silicon oxide film.
Claim 6
Dependent Claim
15 words
A device according to claim 1, wherein said first dielectrics film is a nitride film.
Claim 7
Dependent Claim
14 words
A device according to claim 1, wherein said first dielectrics film is an oxy-nitride-film.
Claim 8
Dependent Claim
22 words
A device according to claim 1, wherein said first dielectrics film is formed on a semiconductor device formed on a semiconductor substrate.
References Cited (Backward Citations)
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