Patent US6123775A successfully refreshed from Google Patents.
US6123775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reaction chamber component having improved temperature uniformity
Assignee: Lam Research Corp
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Filing: 1999-06-30
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Granted: 2000-09-26
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Expires: 2019-06-30
Abstract
Abstract A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.
Inventors
- 👤 Fangli Hao
- 👤 Rajinder Dhindsa
- 👤 Javad Pourhashemi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:39
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45572; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H01J37/32458; H01J37/32522; H10P72/00; H10P72/04; H10P72/0431; H10P72/0432
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
63 words
A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising: a heat sink; a heated member comprising a showerhead or sputter target support supported by the heat sink; and a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member.
Claim 2
Dependent Claim
63 words
A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising: a heat sink; a heated member comprising a showerhead or sputter target support supported by the heat sink; and a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member.
Claim 3
Dependent Claim
137 words
A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising: a heat sink: a heated member supported by the heat sink; and a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member, the heat sink being a support member having a bottom surface, and the heated member being an electrically powered showerhead electrode peripherally secured to the support member so as to enclose a gas distribution chamber between a top surface of the showerhead electrode and the bottom surface of the support member, and wherein the heat transfer member is in thermal contact with a center region of the top surface of the showerhead electrode and the bottom surface of the support member.
Claim 4
Dependent Claim
137 words
A temperature controlled component useful in a reaction chamber for processing a semiconductor substrate, comprising: a heat sink: a heated member supported by the heat sink; and a heat transfer member in thermal contact with the heat sink and a localized region of the heated member at which temperature buildup is highest across the heated member, the heat sink being a support member having a bottom surface, and the heated member being an electrically powered showerhead electrode peripherally secured to the support member so as to enclose a gas distribution chamber between a top surface of the showerhead electrode and the bottom surface of the support member, and wherein the heat transfer member is in thermal contact with a center region of the top surface of the showerhead electrode and the bottom surface of the support member.
Claim 5
Dependent Claim
21 words
The component of claim 2, wherein process gas is supplied to the gas distribution chamber through one or more gas supplies.
Claim 6
Dependent Claim
16 words
The component of claim 2, wherein the heat transfer member comprises a unitary body of metal.
Claim 7
Dependent Claim
15 words
The component of claim 2, wherein the heat transfer member is a cast metal body.
Claim 8
Dependent Claim
16 words
The component of claim 2, wherein the heat transfer member is a shaped body of silicon.
Claim 9
Dependent Claim
15 words
The component of claim 2, wherein the heat transfer member is a metal composite body.
Claim 10
Dependent Claim
20 words
The component of claim 2, wherein the heat transfer member comprises a projection on the top surface of the electrode.
Claim 11
Dependent Claim
25 words
The component of claim 2, wherein the heat transfer member comprises a shaped body bonded to the top surface of the electrode with bonding material.
Claim 12
Dependent Claim
17 words
The component of claim 9, wherein the bonding material is a metallic material or thermally conductive adhesive.
Claim 13
Dependent Claim
23 words
The showerhead electrode assembly of claim 2, wherein the heat transfer member comprises a projection on the bottom surface of the support member.
Claim 14
Dependent Claim
26 words
The component of claim 2, wherein the heat transfer member comprises a shaped body bonded to the bottom surface of the support member with bonding material.
Claim 15
Dependent Claim
17 words
The component of claim 12, wherein the bonding material is a metallic material or thermally conductive adhesive.
Claim 16
Dependent Claim
15 words
The component of claim 2, wherein the heat transfer member comprises concentrically arranged annular rings.
Claim 17
Dependent Claim
12 words
The component of claim 14, wherein the rings include gas passages therethrough.
Claim 18
Dependent Claim
15 words
The component of claim 2, wherein a coolant passes through channels in the support member.
Claim 19
Dependent Claim
28 words
The component of claim 2, further comprising a baffle assembly located between the support member and the showerhead electrode, the baffle assembly including first and second baffle plates.
Claim 20
Dependent Claim
35 words
A component of claim 17, wherein the first and second baffle plates include shaped openings having the shape of the heat transfer member and the shaped openings are closely fitted around the heat transfer member.
Claim 21
Dependent Claim
82 words
The component of claim 17, wherein the heat transfer member comprises first, second and third shaped bodies, the first body thermally contacting the center region of the top surface of the showerhead electrode and an underside of the first baffle plate, the second body thermally contacting the top of the first baffle plate and an underside of the second baffle plate, and the third body thermally contacting the top of the second baffle plate and the bottom surface of the support member.
Claim 22
Dependent Claim
68 words
In a component for a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, the improvement comprising a heat transfer member providing a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate.
Claim 23
Dependent Claim
68 words
In a component for a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, the improvement comprising a heat transfer member providing a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate.
Claim 24
Independent Claim
108 words
A method of processing a semiconductor substrate in a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, and a heat transfer member provides a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate, the method comprising flowing process gas through the showerhead electrode, energizing the process gas into a plasma state by supplying RF power to the showerhead electrode, and contacting an exposed surface of the semiconductor substrate with the plasma.
Claim 25
Independent Claim
108 words
A method of processing a semiconductor substrate in a plasma chamber wherein process gas passes through a baffle plate into a gas plenum between the baffle plate and a showerhead electrode and then through openings in the showerhead electrode into the plasma chamber, and a heat transfer member provides a heat flow path between a central portion of the showerhead electrode and a cooled support member above the baffle plate, the method comprising flowing process gas through the showerhead electrode, energizing the process gas into a plasma state by supplying RF power to the showerhead electrode, and contacting an exposed surface of the semiconductor substrate with the plasma.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-26 | 2004-03-27 | 2004-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-26 | 2008-03-27 | 2008-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-26 | 2012-03-27 | 2012-09-26 | $7700.00 | Window Closed / Lapsed |