US5716485A
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Electrode designs for controlling uniformity profiles in plasma processing reactors
Assignee: Novellus Systems Inc
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Filing: 1995-06-07
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Granted: 1998-02-10
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Expires: 2015-06-07
Abstract
Abstract Electrode designs for reducing the problem of non-uniform etch in large diameter substrates are presented. The electrode opposite the substrate being etched in a plasma reactor can be tailored as to its shape so as to control the uniformity of the etching across the substrate. This is achieved with a number of generally dome-shaped electrode structures including generally cone-shaped electrodes, generally pyramidally-shaped electrodes and generally hemispherically-shaped electrodes. It is believed that non-uniformity of etching is due, at least in part, to excess ion density at the center of the reactor. The dome-shaped electrodes serve to disperse the high concentration of ions from the center of the reactor out toward the periphery of the substrate and thereby even out the ion density distribution across the substrate being etched. The electrodes are useable in diode plasma reactors, triode plasma reactors and ICP plasma reactors.
Inventors
- 👤 Siamak Salimian
- 👤 Carol M. Heller
- 👤 Lumin Li
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32568; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32541; H10; H10P; H10P72/00; H10P72/04; H10P72/0402
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
68 words
A plasma reactor for etching a substrate, said reactor comprising:. a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally conical shape, an apex of said conical shape closer to said first electrode than a base of said conical shape.
Claim 2
Dependent Claim
68 words
A plasma reactor for etching a substrate, said reactor comprising:. a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally conical shape, an apex of said conical shape closer to said first electrode than a base of said conical shape.
Claim 3
Dependent Claim
20 words
A reactor according to claim 1 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 4
Dependent Claim
29 words
A reactor according to claim 1 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 5
Dependent Claim
28 words
A reactor according to claim 1 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 6
Dependent Claim
68 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; second electrode disposed at a distance from said first powered electrode, said second electrode having a generally pyramidal shape, an apex of said pyramidal shape closer to said first powered electrode than a base of said pyramidal shape.
Claim 7
Dependent Claim
68 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; second electrode disposed at a distance from said first powered electrode, said second electrode having a generally pyramidal shape, an apex of said pyramidal shape closer to said first powered electrode than a base of said pyramidal shape.
Claim 8
Dependent Claim
20 words
A reactor according to claim 5 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 9
Dependent Claim
29 words
A reactor according to claim 5 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 10
Dependent Claim
28 words
A reactor according to claim 5 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 11
Dependent Claim
73 words
A plasma reactor for etching, a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second grounded electrode having a generally truncated conical shape, an apex of said truncated conical shape closer to said first powered electrode than a base of said truncated conical shape.
Claim 12
Dependent Claim
73 words
A plasma reactor for etching, a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second grounded electrode having a generally truncated conical shape, an apex of said truncated conical shape closer to said first powered electrode than a base of said truncated conical shape.
Claim 13
Dependent Claim
20 words
A reactor according to claim 9 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 14
Dependent Claim
29 words
A reactor according to claim 9 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 15
Dependent Claim
28 words
A reactor according to claim 9 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 16
Dependent Claim
72 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally truncated pyramidal shape, an apex of said truncated pyramidal shape closer to said first powered electrode than a base of said truncated pyramidal shape.
Claim 17
Dependent Claim
72 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally truncated pyramidal shape, an apex of said truncated pyramidal shape closer to said first powered electrode than a base of said truncated pyramidal shape.
Claim 18
Dependent Claim
20 words
A reactor according to claim 13 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 19
Dependent Claim
29 words
A reactor according to claim 13 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 20
Dependent Claim
28 words
A reactor according to claim 13 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 21
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally truncated hemispherical shape, an apex of said truncated hemispherical shape closer to said first electrode than a base of said truncated hemispherical shape.
Claim 22
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally truncated hemispherical shape, an apex of said truncated hemispherical shape closer to said first electrode than a base of said truncated hemispherical shape.
Claim 23
Dependent Claim
20 words
A reactor according to claim 17 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 24
Dependent Claim
29 words
A reactor according to claim 17 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 25
Dependent Claim
28 words
A reactor according to claim 17 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 26
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally folded conical shape, an apex of said folded conical shape closer to said first electrode than a base of said folded conical shape.
Claim 27
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally folded conical shape, an apex of said folded conical shape closer to said first electrode than a base of said folded conical shape.
Claim 28
Dependent Claim
20 words
A reactor according to claim 21 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 29
Dependent Claim
29 words
A reactor according to claim 21 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 30
Dependent Claim
28 words
A reactor according to claim 21 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 31
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally folded pyramidal shape, an apex of said folded pyramidal shape closer to said first electrode than a base of said folded pyramidal shape.
Claim 32
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally folded pyramidal shape, an apex of said folded pyramidal shape closer to said first electrode than a base of said folded pyramidal shape.
Claim 33
Dependent Claim
20 words
A reactor according to claim 25 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 34
Dependent Claim
29 words
A reactor according to claim 25 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 35
Dependent Claim
28 words
A reactor according to claim 25 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
Claim 36
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally folded hemispherical shape, an apex of said folded hemispherical shape closer to said first electrode than a base of said folded hemispherical shape.
Claim 37
Dependent Claim
71 words
A plasma reactor for etching a substrate, said reactor comprising: a first powered electrode adapted to support the substrate, said first powered electrode connected to a source of RF energy; a second electrode disposed at a distance from said first powered electrode, said second electrode having a generally folded hemispherical shape, an apex of said folded hemispherical shape closer to said first electrode than a base of said folded hemispherical shape.
Claim 38
Dependent Claim
20 words
A reactor according to claim 29 wherein the reactor is a diode type reactor and said second electrode is grounded.
Claim 39
Dependent Claim
29 words
A reactor according to claim 29 wherein the reactor is a triode type reactor and said second electrode is a powered electrode connected to a source of RF energy.
Claim 40
Dependent Claim
28 words
A reactor according to claim 29 wherein the reactor is an inductively coupled type type reactor and said second electrode is connected to a source of RF energy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-02-09 | 2001-08-11 | 2002-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-09 | 2005-08-11 | 2006-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-02-09 | 2009-08-11 | 2010-02-10 | $7700.00 | Window Closed / Lapsed |