Dry process etching device

Abstract

Abstract PURPOSE:To minimize variation of etching ending time of all base plates, when plural number of base plates are processed at one time, by arranging electrodes in opposition to the base plates on an electrode keeping different distances respectively. CONSTITUTION:In order to compensate for etching speed deviation, electrodes 171 through 173 are provided oppositely to base plates 51 through 53 on an electrode 18, and by changing distances among the electrode 18 and the electrodes 171-173, difference in etching speed due to variation of position of activated ion density are compensated for by all the base plates so that all the base plates can be etched to almost the same depth at the same time. When the base plates 51-53 are placed on their respective positions of the center of the electrode 18, 150 mm from the center toward a waste gas outlet 19 and 150 mm from the center toward a gas intake 16,a and if their intervals are 80 mm, 110 mm and 50 mm, respectively, the etching speed's maximum deviation is to become 4.8%.

Inventors

• 👤 Kunio Hanazawa
• 👤 Katsuzo Ukai

Bibliographic Details