US5494713A
Expired / Lapsed
US
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Method for treating surface of aluminum material and plasma treating apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1995-02-03
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Granted: 1996-02-27
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Expires: 2015-02-03
Abstract
Abstract An alumite coating film is formed on a surface of an aluminum electrode by anodic oxidation. Pores formed on the alumite coating film are sealed. Thereafter, a silicon nitride film is formed on a surface of the alumite coating film by plasma CVD. In a plasma etching apparatus using the aluminum electrode on which the alumite coating film and the silicon nitride film are sequentially layered, HBr/HCl gas is used as process gas to perform plasma etching of a wafer. An active radical generated from HBr/HCl etches the wafer and attacks the aluminum electrode. Since the aluminum electrode is protected with the silicon nitride film, an aluminum substrate and the alumite coating film are prevented from being etched. Therefore, impurity materials of the aluminum substrate and the alumite coating film are not dispersed into the chamber of the plasma etching apparatus. As a result, the wafer can be prevented from being contaminated by the impurity materials.
Inventors
- 👤 Hayashi Ootuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:41
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; C; C23; C23C; C23C8/00; C23C8/06; C23C8/36; C23C8/80; H01J37/32431; H01J37/32458; H01J37/32477; H01J37/32532; H01J37/32559; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; Y; Y10; Y10S; Y10S156/00; Y10S156/914
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
67 words
A method for treating a surface of aluminum material made of aluminum, comprising the steps of: forming an anodic oxide coating film on the surface of aluminum material by anodic oxidation; sealing pores formed on said anodic oxide coating film by said anodic oxidation treatment; and forming a silicon coating film on a surface of said anodic oxide coating film by plasma CVD after said sealing treatment.
Claim 2
Independent Claim
67 words
A method for treating a surface of aluminum material made of aluminum, comprising the steps of: forming an anodic oxide coating film on the surface of aluminum material by anodic oxidation; sealing pores formed on said anodic oxide coating film by said anodic oxidation treatment; and forming a silicon coating film on a surface of said anodic oxide coating film by plasma CVD after said sealing treatment.
Claim 3
Dependent Claim
20 words
A method according to claim 1, wherein a thickness of said silicon coating film is within 5 to 10 μm.
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein said silicon coating film is at least one selected from a group consisting of SiO 2 and SiN 2 .
Claim 5
Dependent Claim
19 words
A method according to claim 1, wherein aluminum material is material to be used in a plasma treating apparatus.
Claim 6
Dependent Claim
32 words
A method according to claim 4, wherein said aluminum material is used as a mount electrode, an opposite electrode, and an inner wall material of a chamber of said plasma treating apparatus.
Claim 7
Dependent Claim
21 words
A method according to claim 1, wherein forming is provided to the surface of said aluminum material before said anodic oxidation.
Claim 8
Dependent Claim
98 words
A plasma treating apparatus comprising: a chamber; a mount electrode provided in said chamber; an opposite electrode provided in said chamber so as to be opposite to said mount electrode; process gas supplying means for supplying process gas to said chamber; and a high-frequency power source for supplying a high frequency to at least one of said mount electrode and said opposite electrode, wherein when at least one of said mount electrode and said opposite electrode is made of aluminum, an anodic oxide film and a silicon coating film are sequentially layered on a surface of said aluminum.
Claim 9
Dependent Claim
98 words
A plasma treating apparatus comprising: a chamber; a mount electrode provided in said chamber; an opposite electrode provided in said chamber so as to be opposite to said mount electrode; process gas supplying means for supplying process gas to said chamber; and a high-frequency power source for supplying a high frequency to at least one of said mount electrode and said opposite electrode, wherein when at least one of said mount electrode and said opposite electrode is made of aluminum, an anodic oxide film and a silicon coating film are sequentially layered on a surface of said aluminum.
Claim 10
Dependent Claim
22 words
A plasma treating apparatus according to claim 7, wherein a thickness of said silicon coating film is within 5 to 10 μm.
Claim 11
Dependent Claim
29 words
A plasma treating apparatus according to claim 7, wherein said silicon coating film is at least one selected from a group consisting of SiO 2 and SiN 2 .
Claim 12
Dependent Claim
50 words
A plasma treating apparatus according to claim 7, wherein a large number of openings is formed on said opposite electrode to supply process gas, and said anodic oxide film and said silicon coating film are formed on a surface of said opposite electrode including inner peripheral surfaces of these openings.
Claim 13
Dependent Claim
14 words
A plasma treating apparatus according to claim 7, wherein process gas is etching gas.
Claim 14
Dependent Claim
13 words
A plasma treating apparatus according to claim 11, wherein etching gas is HBr/HCl.
References Cited (Backward Citations)
No citation records indexed.
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