US5730803A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body
Assignee: Applied Materials Inc
•
Filing: 1996-02-23
•
Granted: 1998-03-24
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Expires: 2016-02-23
Abstract
Abstract The present invention discloses an apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold plate. Further, the overall structure of the electrostatic chuck in combination with the heat transfer apparatus of the present invention permits the thermal and pressure isolation of the high-temperature, vacuum process chamber containing the work piece processing surface of the electrostatic chuck from the low-temperature, atmospheric pressured heat transfer apparatus of the present invention. In a preferred embodiment of the heat transfer apparatus, the apparatus comprises: an electrostatic chuck body having a buried electrode for high voltage DC and RF electrical input and a buried heating element, whereby the electrostatic chuck can be heated; a controlled heat transfer apparatus, including a heat transfer plate having a first surface in thermal contact with the electrostatic chuck body and a second surface in contact with at least one heat transfer thermal well; a cold body in thermal contact with the at least one heat transfer thermal well; and a thermal grease between the thermal well and the cold body.
Inventors
- 👤 Robert Steger
- 👤 James Taoka
- 👤 Gregory Shmunis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:46
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C23C16/463; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4586; C23C16/466; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; H10P72/70; H10P72/72; H10P72/722
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
59 words
A heat transfer apparatus useful in semiconductor processing, comprising: a) at least one heat transfer thermal well having a first surface in thermal contact with a surface of an electrostatic chuck body and a second surface in thermal contact with a cold body; and b) a lubricant between said second surface of said thermal well and said cold body.
Claim 2
Dependent Claim
59 words
A heat transfer apparatus useful in semiconductor processing, comprising: a) at least one heat transfer thermal well having a first surface in thermal contact with a surface of an electrostatic chuck body and a second surface in thermal contact with a cold body; and b) a lubricant between said second surface of said thermal well and said cold body.
Claim 3
Dependent Claim
14 words
The heat transfer apparatus of claim 1, wherein said lubricant is a thermal grease.
Claim 4
Dependent Claim
16 words
The heat transfer apparatus of claim 3, wherein said thermal grease contains a heat conductive material.
Claim 5
Dependent Claim
24 words
The heat transfer apparatus of claim 3, wherein said conductive material is selected from the group consisting of boron nitride particles and aluminum particles.
Claim 6
Dependent Claim
55 words
The heat transfer apparatus of claim 1, wherein said at least one thermal well is in thermal contact with said electrostatic chuck body through a heat transfer plate having a first surface in thermal contact at a with said electrostatic chuck body and a second surface in contact with said at least one thermal well.
Claim 7
Independent Claim
88 words
An apparatus useful in semiconductor processing, comprising: a) An electrostatic chuck body having a buried electrode for high voltage DC and RF electrical input and a buried heating element, whereby the electrostatic chuck can be heated; b) a heat transfer apparatus, including a heat transfer plate having a first surface in thermal contact with said electrostatic chuck body and a second surface in contact with at least one heat transfer thermal well; and c) a cold body in contact with the at least one heat transfer thermal well.
Claim 8
Independent Claim
88 words
An apparatus useful in semiconductor processing, comprising: a) An electrostatic chuck body having a buried electrode for high voltage DC and RF electrical input and a buried heating element, whereby the electrostatic chuck can be heated; b) a heat transfer apparatus, including a heat transfer plate having a first surface in thermal contact with said electrostatic chuck body and a second surface in contact with at least one heat transfer thermal well; and c) a cold body in contact with the at least one heat transfer thermal well.
Claim 9
Dependent Claim
32 words
The apparatus of claim 6, including as an additional element a lubricant between said at least one thermal well and said cold body which is in thermal contact with said thermal well.
Claim 10
Dependent Claim
12 words
The apparatus of claim 7, wherein said lubricant is a thermal grease.
Claim 11
Dependent Claim
16 words
The heat transfer apparatus of claim 8, wherein said thermal grease contains a heat conductive material.
Claim 12
Dependent Claim
24 words
The heat transfer apparatus of claim 9, wherein said conductive material is selected from the group consisting of boron nitride particles and aluminum particles.
Claim 13
Dependent Claim
25 words
The apparatus of claim 7, wherein said buried electrode is in the form of an electrical grid near the upper surface of said electrostatic chuck.
Claim 14
Dependent Claim
12 words
The apparatus of claim 6 wherein said electrostatic chuck comprises silicon nitride.
Claim 15
Dependent Claim
31 words
The apparatus of claim 6, wherein said heat transfer body is disk or plate shaped, and wherein said heat transfer body is braised to the lower surface of said electrostatic chuck.
Claim 16
Dependent Claim
13 words
The apparatus of claim 13, wherein said heat transfer body comprises silicon nitride.
Claim 17
Dependent Claim
25 words
The apparatus of claim 6, wherein said at least one heat transfer thermal well is braised at a first end to said heat transfer body.
Claim 18
Dependent Claim
21 words
The apparatus of claim 15, wherein said heat transfer thermal well includes a second end comprising a flat heat transfer surface.
Claim 19
Dependent Claim
15 words
The apparatus of claim 16, wherein said cold body has a flat heat transfer surface.
Claim 20
Dependent Claim
31 words
The apparatus of claim 17, including as an additional element a lubricant between said at least one thermal well flat heat transfer surface and said cold body flat heat transfer surface.
Claim 21
Dependent Claim
12 words
The apparatus of claim 18, wherein said lubricant is a thermal grease.
Claim 22
Dependent Claim
16 words
The heat transfer apparatus of claim 19, wherein said thermal grease contains a heat conductive material.
Claim 23
Dependent Claim
24 words
The heat transfer apparatus of claim 20, wherein said conductive material is selected from the group consisting of boron nitride particles and aluminum particles.
Claim 24
Independent Claim
103 words
An apparatus useful in semiconductor processing, comprising: a) an electrostatic chuck body having a buried heating element, wherein the power to said heating element is controlled in response to a measured temperature of said electrostatic chuck body or to a measured temperature of a semiconductor substrate in thermal contact with said electrostatic chuck body; or to a measured temperature of a process variable; and b) a heat transfer apparatus including at least one heat transfer thermal well having a first surface in thermal contact with a surface of said electrostatic chuck body and a second surface in thermal contact with a cold body.
Claim 25
Independent Claim
103 words
An apparatus useful in semiconductor processing, comprising: a) an electrostatic chuck body having a buried heating element, wherein the power to said heating element is controlled in response to a measured temperature of said electrostatic chuck body or to a measured temperature of a semiconductor substrate in thermal contact with said electrostatic chuck body; or to a measured temperature of a process variable; and b) a heat transfer apparatus including at least one heat transfer thermal well having a first surface in thermal contact with a surface of said electrostatic chuck body and a second surface in thermal contact with a cold body.
Claim 26
Dependent Claim
25 words
The apparatus of claim 22, wherein the poser to said heating element is controlled in response to said measured temperature of said electrostatic chuck body.
Claim 27
Independent Claim
113 words
An apparatus useful in semiconductor processing, comprising: a) a high density plasma chemical vapor deposition processing chamber; b) an electrostatic chuck body having a buried heating element, wherein the power to said heating element is controlled in response to a measured temperature of said electrostatic chuck body or to a measured temperature of a semiconductor substrate in thermal contact with said electrostatic chuck body; or to a measured temperature of a process variable; and c) a heat transfer apparatus including at least one heat transfer thermal well having a first surface in thermal contact with a surface of said electrostatic chuck body and a second surface in thermal contact with a cold body.
Claim 28
Independent Claim
113 words
An apparatus useful in semiconductor processing, comprising: a) a high density plasma chemical vapor deposition processing chamber; b) an electrostatic chuck body having a buried heating element, wherein the power to said heating element is controlled in response to a measured temperature of said electrostatic chuck body or to a measured temperature of a semiconductor substrate in thermal contact with said electrostatic chuck body; or to a measured temperature of a process variable; and c) a heat transfer apparatus including at least one heat transfer thermal well having a first surface in thermal contact with a surface of said electrostatic chuck body and a second surface in thermal contact with a cold body.
Claim 29
Independent Claim
69 words
A method of transferring heat from an electrostatic chuck, comprising: a) providing a surface of said electrostatic chuck from which heat is to be transferred; b) placing a first surface of at least one heat transfer thermal well in thermal contact with said surface of said electrostatic chuck, c) placing a second surface of said at least one heat transfer thermal well in thermal contact with a cold body.
Claim 30
Independent Claim
69 words
A method of transferring heat from an electrostatic chuck, comprising: a) providing a surface of said electrostatic chuck from which heat is to be transferred; b) placing a first surface of at least one heat transfer thermal well in thermal contact with said surface of said electrostatic chuck, c) placing a second surface of said at least one heat transfer thermal well in thermal contact with a cold body.
Claim 31
Dependent Claim
32 words
The method of claim 25, including an additional step in which a lubricant is placed between said second surface of said at least one heat transfer thermal well and said cold body.
Claim 32
Dependent Claim
12 words
The method of claim 26, wherein said lubricant is a thermal grease.
Claim 33
Independent Claim
122 words
A method of transferring heat from an electrostatic chuck located within a semiconductor processing chamber, comprising: a) providing an electrostatic chuck body having a buried heating element; b) controlling the power to said heating element in response to a measured temperature of said electrostatic chuck body or to a measured temperature of a semiconductor substrate in thermal contact with said electrostatic chuck body; or to a measured temperature of a process variable within said processing chamber; c) placing a first surface of at least one heat transfer thermal well in thermal contact with a surface of said electrostatic chuck body; and d) placing a second surface of said at least one heat transfer thermal well in thermal contact with a cold body.
Claim 34
Independent Claim
122 words
A method of transferring heat from an electrostatic chuck located within a semiconductor processing chamber, comprising: a) providing an electrostatic chuck body having a buried heating element; b) controlling the power to said heating element in response to a measured temperature of said electrostatic chuck body or to a measured temperature of a semiconductor substrate in thermal contact with said electrostatic chuck body; or to a measured temperature of a process variable within said processing chamber; c) placing a first surface of at least one heat transfer thermal well in thermal contact with a surface of said electrostatic chuck body; and d) placing a second surface of said at least one heat transfer thermal well in thermal contact with a cold body.
Claim 35
Independent Claim
100 words
An apparatus useful in semiconductor processing for providing thermal and pressure isolation of a work piece processing surface of an electrostatic chuck from a heat transfer apparatus for the removal of heat from said electrostatic chuck, said thermal and pressure isolation apparatus comprising: an envelope surrounding said heat transfer apparatus, said envelope having a first opening which is sealed against a portion of said electrostatic chuck surface which does not include the work piece processing surface, and a second opening which can be sealed against a surface in a processing chamber in which said electrostatic chuck is to be operated.
Claim 36
Independent Claim
100 words
An apparatus useful in semiconductor processing for providing thermal and pressure isolation of a work piece processing surface of an electrostatic chuck from a heat transfer apparatus for the removal of heat from said electrostatic chuck, said thermal and pressure isolation apparatus comprising: an envelope surrounding said heat transfer apparatus, said envelope having a first opening which is sealed against a portion of said electrostatic chuck surface which does not include the work piece processing surface, and a second opening which can be sealed against a surface in a processing chamber in which said electrostatic chuck is to be operated.
Claim 37
Dependent Claim
59 words
The apparatus of claim 29, wherein said envelope is created using a thin-walled cylinder, a first end of which is sealed against a surface of the electrostatic chuck which is not the work piece processing surface, and a second end of which is sealed against a wall of the semiconductor processing chamber in which the electrostatic chuck is operated.
Claim 38
Dependent Claim
27 words
The apparatus of claim 30, wherein the linear expansion coefficient of said thin-walled cylinder material is matched to the material of construction of the electrostatic chuck body.
Claim 39
Independent Claim
105 words
A method useful in semiconductor processing for providing thermal and pressure isolation of the work piece processing surface of an electrostatic chuck from a heat transfer apparatus for removal of heat from said electrostatic chuck, said method comprising: a) placing a first surface of said heat transfer apparatus in sealing thermal contact with a surface of said electrostatic chuck other than said work piece processing surface; b) containing said heat transfer apparatus not in sealing contact with said surface of said electrostatic chuck within an envelope which can be sealed to isolate said heat transfer apparatus from said work piece-processing surface of said electrostatic chuck.
Claim 40
Independent Claim
105 words
A method useful in semiconductor processing for providing thermal and pressure isolation of the work piece processing surface of an electrostatic chuck from a heat transfer apparatus for removal of heat from said electrostatic chuck, said method comprising: a) placing a first surface of said heat transfer apparatus in sealing thermal contact with a surface of said electrostatic chuck other than said work piece processing surface; b) containing said heat transfer apparatus not in sealing contact with said surface of said electrostatic chuck within an envelope which can be sealed to isolate said heat transfer apparatus from said work piece-processing surface of said electrostatic chuck.
Claim 41
Dependent Claim
69 words
The method of claim 32, wherein said envelope comprises a thin-walled cylinder having a first end sealed against a surface of said electrostatic chuck adjacent the surface of said electrostatic chuck which is in sealing thermal contact with said heat transfer apparatus, in a manner which encompasses said heat transfer apparatus and a second end which permits said thin-walled cylinder to be sealed against a semiconductor processing chamber wall.
References Cited (Backward Citations)
US5350479A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-23 | 2001-09-22 | 2002-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-23 | 2005-09-22 | 2006-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-23 | 2009-09-22 | 2010-03-24 | $7700.00 | Window Closed / Lapsed |