Patent US6087074A successfully refreshed from Google Patents.
US6087074A
Expired / Lapsed
US
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Photomask and pattern forming method employing the same
Assignee: Renesas Technology Corp
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Filing: 1999-07-23
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Granted: 2000-07-11
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Expires: 2019-07-23
Abstract
Abstract A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.
Inventors
- 👤 Norio Hasegawa
- 👤 Fumio Murai
- 👤 Katsuya Hayano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:39
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32; H; H10; H10P; H10P76/00; G03F1/29; G03F7/00; G03F7/70; G03F7/70058; G03F7/70066; G03F7/20; G03F7/2022
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
118 words
A pattern forming method comprising the steps of: preparing a semitransparent phase shifting mask including (a) a semitransparent phase shifting pattern having a semitransparent phase shifting film formed at a predetermined position on a photomask substrate and (b) first and second light shielding areas provided, respectively, in said semitransparent phase shifting pattern and at a peripheral edge portion of said semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 2
Dependent Claim
118 words
A pattern forming method comprising the steps of: preparing a semitransparent phase shifting mask including (a) a semitransparent phase shifting pattern having a semitransparent phase shifting film formed at a predetermined position on a photomask substrate and (b) first and second light shielding areas provided, respectively, in said semitransparent phase shifting pattern and at a peripheral edge portion of said semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 3
Dependent Claim
151 words
A pattern forming method comprising the steps of: preparing a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; preparing a substrate having a to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film to said exposure light by use of said semitransparent phase shifting mask.
Claim 4
Dependent Claim
151 words
A pattern forming method comprising the steps of: preparing a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; preparing a substrate having a to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film to said exposure light by use of said semitransparent phase shifting mask.
Claim 5
Dependent Claim
57 words
A method according to claim 2, wherein said first light shielding area provided in said first semitransparent phase shifting pattern includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern finer than a critical resolution of an exposure apparatus.
Claim 6
Dependent Claim
51 words
A method according to claim 3, wherein a ratio α of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as α=β√T, where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range 0.5≦β≦2.0. 5.
Claim 7
Dependent Claim
32 words
A method according to claim 2, wherein said second light shielding area provided at the peripheral edge portion of said first semitransparent phase shifting pattern includes a repetition pattern of transparent portions.
Claim 8
Dependent Claim
38 words
A method according to claim 2, wherein a transparent pattern is provided within said second light shielding area, provided at the peripheral edge portion of said first semitransparent phase shifting pattern to be transferred onto said to-be-exposed film.
Claim 9
Dependent Claim
20 words
A method according to claim 2, wherein said first semitransparent phase shifting pattern is a pattern for forming a device.
Claim 10
Dependent Claim
137 words
A pattern forming method comprising the steps of: mounting a substrate having a photoresist film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a semitransparent phase shifting pattern having a semitransparent phase shifting film formed at a predetermined position on a photomask substrate and (b) first and second light shielding areas provided, respectively, in said semitransparent phase shifting pattern and at a peripheral edge portion of said semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on said photoresist film; and exposing said photoresist film by use of said semitransparent phase shifting mask.
Claim 11
Dependent Claim
137 words
A pattern forming method comprising the steps of: mounting a substrate having a photoresist film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a semitransparent phase shifting pattern having a semitransparent phase shifting film formed at a predetermined position on a photomask substrate and (b) first and second light shielding areas provided, respectively, in said semitransparent phase shifting pattern and at a peripheral edge portion of said semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on said photoresist film; and exposing said photoresist film by use of said semitransparent phase shifting mask.
Claim 12
Dependent Claim
192 words
A pattern forming method comprising the steps of: mounting a substrate having a to-be-exposed film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern, and at a peripheral edge portion of said first semitransparent phase shifting pattern and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; exposing a first area of said to-be-exposed film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; and exposing a second area, different from said first area, of said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 13
Dependent Claim
192 words
A pattern forming method comprising the steps of: mounting a substrate having a to-be-exposed film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern, and at a peripheral edge portion of said first semitransparent phase shifting pattern and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; exposing a first area of said to-be-exposed film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; and exposing a second area, different from said first area, of said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 14
Dependent Claim
57 words
A method according to claim 9, wherein said first light shielding area provided in said first semitransparent phase shifting pattern includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern finer than a critical resolution of an exposure apparatus.
Claim 15
Dependent Claim
51 words
A method according to claim 10, wherein a ratio α of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as α=β√T, where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range 0.5≦β≦2.0. 12.
Claim 16
Dependent Claim
31 words
A method according to claim 9, wherein said second light shielding area provided the peripheral edge portion of said first semitransparent phase shifting pattern includes a repetition pattern of transparent portions.
Claim 17
Dependent Claim
38 words
A method according to claim 9, wherein a transparent pattern is provided within said second light shielding area, provided at the peripheral edge portion of said first semitransparent phase shifting pattern, to be transferred onto said to-be-exposed film.
Claim 18
Dependent Claim
20 words
A method according to claim 9, wherein said first semitransparent phase shifting pattern is a pattern for forming a device.
Claim 19
Dependent Claim
38 words
A method according to claim 9, wherein said second area includes a portion of said to-be-exposed film which is shielded by said second light shielding area in said step of exposing said first area of said to-be-exposed film.
Claim 20
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; preparing a substrate having a to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film to said exposure light by use of said semitransparent phase shifting mask.
Claim 21
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; preparing a substrate having a to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film to said exposure light by use of said semitransparent phase shifting mask.
Claim 22
Dependent Claim
56 words
A method according to claim 16, wherein said first light shielding area provided in said semitransparent phase shifting pattern includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern finer than a critical resolution of an exposure apparatus.
Claim 23
Dependent Claim
50 words
A method according to claim 17, wherein a ratio α of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as α=β√T, where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range 0.5≦β≦2.0.
Claim 24
Dependent Claim
32 words
A method according to claim 16, wherein said second light shielding area provided at the peripheral edge portion of said first semitransparent phase shifting pattern includes a repetition pattern of transparent portions.
Claim 25
Dependent Claim
38 words
A method according to claim 16, wherein a transparent pattern is provided within said second light shielding area, provided at the peripheral edge portion of said first semitransparent phase shifting pattern, to be transferred onto said to-be-exposed film.
Claim 26
Independent Claim
201 words
A method of manufacturing a semiconductor device, comprising the steps of: mounting a substrate having a to-be-exposed film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; exposing a first area of said to-be-exposed film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; and exposing a second area, different from said first area, of said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 27
Independent Claim
201 words
A method of manufacturing a semiconductor device, comprising the steps of: mounting a substrate having a to-be-exposed film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed film; exposing a first area of said to-be-exposed film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; and exposing a second area, different from said first area, of said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 28
Dependent Claim
57 words
A method according to claim 21, wherein said first light shielding area provided in said first semitransparent phase shifting pattern includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern finer than a critical resolution of an exposure apparatus.
Claim 29
Dependent Claim
50 words
A method according to claim 22, wherein a ratio α of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as α=β√T, where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range 0.5≦β≦2.0.
Claim 30
Dependent Claim
32 words
A method according to claim 22, wherein said second light shielding area provided at the peripheral edge portion of said first semitransparent phase shifting pattern includes a repetition pattern of transparent portions.
Claim 31
Dependent Claim
38 words
A method according to claim 22, wherein a transparent pattern is provided within said second light shielding area, provided at the peripheral edge portion of said first semitransparent phase shifting pattern, to be transferred onto said to-be-exposed film.
Claim 32
Independent Claim
248 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an impurity-doped layer in a predetermined region of a semiconductor substrate; forming an insulating film on said semiconductor substrate having said doped layer formed therein; forming a photoresist film on said insulating film; mounting said substrate having said photoresist film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a hole having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on said photoresist film; exposing a first area of said photoresist film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; exposing a second area, different from said first area, of said photoresist film by use of said semitransparent phase shifting mask; and, thereafter etching said insulating film to form a hole above said impurity doped layer.
Claim 33
Independent Claim
248 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an impurity-doped layer in a predetermined region of a semiconductor substrate; forming an insulating film on said semiconductor substrate having said doped layer formed therein; forming a photoresist film on said insulating film; mounting said substrate having said photoresist film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a hole having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on said photoresist film; exposing a first area of said photoresist film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; exposing a second area, different from said first area, of said photoresist film by use of said semitransparent phase shifting mask; and, thereafter etching said insulating film to form a hole above said impurity doped layer.
Claim 34
Independent Claim
247 words
A method of manufacturing a semiconductor device, comprising the steps of forming a wiring layer above a predetermined region of a semiconductor substrate; forming an insulating film on said semiconductor substrate having said wiring layer formed thereabove; forming a photoresist film on said insulating film; mounting said substrate having said photoresist film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a hole having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on said photoresist film; exposing a first area of said photoresist film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; exposing a second area, different from said first area, of said photoresist film by use of said semitransparent phase shifting mask; and, thereafter etching said insulating film to form a hole above said wiring layer.
Claim 35
Independent Claim
247 words
A method of manufacturing a semiconductor device, comprising the steps of forming a wiring layer above a predetermined region of a semiconductor substrate; forming an insulating film on said semiconductor substrate having said wiring layer formed thereabove; forming a photoresist film on said insulating film; mounting said substrate having said photoresist film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a hole having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on said photoresist film; exposing a first area of said photoresist film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; exposing a second area, different from said first area, of said photoresist film by use of said semitransparent phase shifting mask; and, thereafter etching said insulating film to form a hole above said wiring layer.
Claim 36
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern; preparing a substrate having a to-be-exposed film, said light shielding areas of said semitransparent phase shifting mask serving to make an intensity of light having passed through said light shielding areas not larger than 0.05, as measured on said to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film to said exposure light by use of said semitransparent phase shifting mask.
Claim 37
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of: preparing a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern; preparing a substrate having a to-be-exposed film, said light shielding areas of said semitransparent phase shifting mask serving to make an intensity of light having passed through said light shielding areas not larger than 0.05, as measured on said to-be-exposed film; and exposing, with a projection exposure optical system, said to-be-exposed film to said exposure light by use of said semitransparent phase shifting mask.
Claim 38
Dependent Claim
57 words
A method according to claim 28, wherein said first light shielding area provided in said first semitransparent phase shifting pattern includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern finer than a critical resolution of an exposure apparatus.
Claim 39
Dependent Claim
51 words
A method according to claim 29, wherein a ratio α of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as α=β√T, where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range 0.5≦β≦2.0. 31.
Claim 40
Dependent Claim
32 words
A method according to claim 28, wherein said second light shielding area provided at the peripheral edge portion of said first semitransparent phase shifting pattern includes a repetition pattern of transparent portions.
Claim 41
Dependent Claim
37 words
A method according to claim 28, wherein a transparent pattern is provided within said second light shielding area, provided at the peripheral portion of said first semitransparent phase shifting pattern, to be transferred onto said to-be-exposed film.
Claim 42
Independent Claim
190 words
A method of manufacturing a semiconductor device, comprising the steps of: mounting a substrate having to-be-exposed film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas not larger than 0.05, as measured on said to-be-exposed film; exposing a first area of said to-be-exposed film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; and exposing a second area, different from said first area, of said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 43
Independent Claim
190 words
A method of manufacturing a semiconductor device, comprising the steps of: mounting a substrate having to-be-exposed film, on a sample stage of an aligner having a masking blade; mounting, on a mask support of said aligner, a semitransparent phase shifting mask including (a) a first semitransparent phase shifting pattern for formation of a semiconductor device having a semitransparent phase shifting film, said semitransparent phase shifting film being formed at a predetermined position on a photomask substrate and having a transmittance with respect to exposure light not higher than 25% and (b) first and second light shielding areas provided, respectively, in said first semitransparent phase shifting pattern and at a peripheral edge portion of said first semitransparent phase shifting pattern, and serving to make an intensity of light having passed through said light shielding areas not larger than 0.05, as measured on said to-be-exposed film; exposing a first area of said to-be-exposed film by use of said semitransparent phase shifting mask; moving said sample stage in a horizontal direction; and exposing a second area, different from said first area, of said to-be-exposed film by use of said semitransparent phase shifting mask.
Claim 44
Dependent Claim
57 words
A method according to claim 33, wherein said first light shielding area provided in said first semitransparent phase shifting pattern includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern finer than a critical resolution of an exposure apparatus.
Claim 45
Dependent Claim
50 words
A method according to claim 34, wherein a ratio α of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as α=β√T, where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range 0.5≦β≦2.0.
Claim 46
Dependent Claim
32 words
A method according to claim 34, wherein said second light shielding area provided at the peripheral edge portion of said first semitransparent phase shifting pattern includes a repetition pattern of transparent portions.
Claim 47
Dependent Claim
38 words
A method according to claim 34, wherein a transparent pattern is provided within said second light shielding area, provided at the peripheral edge portion of said first semitransparent phase shifting pattern, to be transferred onto said to-be-exposed film.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |