Photomask and pattern forming method employing the same

Claim 2

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein said mask has a size larger than that of a minimum pattern which is allowed to be transferred by said second portion.

Claim 3

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the predetermined repeated pitch is defined as: P=α·λ/NA, where NA represents a numerical aperture of a projection lens of the projection exposure optical system, λ represents a wavelength of the exposure light, and α≦0.8.

Claim 4

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the predetermined repeated pitch is defined as: P=α·λ/NA, where NA represents a numerical aperture of a projection lens of the projection exposure optical system, λ represents a wavelength of the exposure light, and α≦0.8.

Claim 5

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein a size ratio α of the size of said transparent pattern to the size of said semitransparent phase shifting pattern is defined as: ##EQU2## where T represents the transmittance of the semitransparent phase shifting pattern, and 0.5≦β≦2.0.

Claim 6

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein a size ratio α of the size of said transparent pattern to the size of said semitransparent phase shifting pattern is defined as: ##EQU2## where T represents the transmittance of the semitransparent phase shifting pattern, and 0.5≦β≦2.0.

Claim 7

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein light which has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has a light intensity on a region of said substrate equal to or lower than one-half that of light which has passed through said first portion, when said substrate region is double-exposed through said mask in a step-and-repeat exposure.

Claim 8

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein light which has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has a light intensity on a region of said substrate equal to or lower than one-half that of light which has passed through said first portion, when said substrate region is double-exposed through said mask in a step-and-repeat exposure.

Claim 9

A pattern forming method according to claim 4, wherein said substrate region which is double-exposed is provided at a peripheral portion of said mask.

Claim 10

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the predetermined repeated pitch is equal to or smaller than a critical resolution of the projection exposure optical system.

Claim 11

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the predetermined repeated pitch is equal to or smaller than a critical resolution of the projection exposure optical system.

Claim 12

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the second portion is disposed outside a periphery of the first portion.

Claim 13

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the second portion is disposed outside a periphery of the first portion.

Claim 14

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the semitransparent phase shifting pattern and transparent pattern of the second portion are arranged in said alternating and periodic pattern with said predetermined repeated pitch for reducing resolvability of said alternating and periodic pattern with respect to the light passing through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion.

Claim 15

A pattern forming method, comprising the steps of: preparing a mask having a mask pattern containing first and second portions, said first portion being a semitransparent phase shifting region, said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, and light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern; and wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity that is smaller than that of light that has passed through said first portion; preparing a substrate; and illuminating said mask with the exposure light to project the mask pattern onto said substrate through a projection exposure optical system; wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%; and wherein the semitransparent phase shifting pattern and transparent pattern of the second portion are arranged in said alternating and periodic pattern with said predetermined repeated pitch for reducing resolvability of said alternating and periodic pattern with respect to the light passing through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion.