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US4890309A Expired / Lapsed US ⏱️ 0.0 years remaining

Lithography mask with a π-phase shifting attenuator

Assignee: Massachusetts Institute of Technology
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Filing: 1987-02-25
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Granted: 1989-12-26
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Expires: 2007-02-25
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Abstract

Abstract The mask includes an attenuator which passes a fraction of the incident electromagnetic radiation and phase shifts the radiation relative to the radiation passing through open features of the mask by approximately an odd multiple of π radians. This phase shifting of light passing through the attenuator by π radians reduces the edge blurring that results from diffraction effects. The present invention steepens the slope of the intensity profile at the edges of features in x-ray lithographic replication relative to the slope obtained with a conventional x-ray mask. The steeper slope is a highly significant advantage because it permits improved linewidth control.

Inventors

  • 👤 Henry I. Smith
  • 👤 Erik H. Anderson
  • 👤 Mark L. Schattenburg

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 15:59
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/22; G03F1/26; G03F1/32; G03F7/00; G03F7/70; G03F7/70216; G03F7/70283

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 55 words
Lithography mask including open features and an attenuator whose material and thickness are selected to both pass a fraction of incident electromagnetic radiation and to phase shift the radiation relative to radiation passing through the open features of the mask by approximately an odd multiple of π radians in order to reduce deleterious diffraction effects.
Claim 2
Dependent Claim 55 words
Lithography mask including open features and an attenuator whose material and thickness are selected to both pass a fraction of incident electromagnetic radiation and to phase shift the radiation relative to radiation passing through the open features of the mask by approximately an odd multiple of π radians in order to reduce deleterious diffraction effects.
Claim 3
Dependent Claim 12 words
The lithography mask of claim 1 wherein the electromagnetic radiation is x-rays.
Claim 4
Dependent Claim 13 words
The lithography mask of claim 2 wherein the attenuator is an x-ray absorber.
Claim 5
Dependent Claim 19 words
The lithography mask of claim 2 wherein the attenuator is a multilayer film resulting in attenuation through back reflection.
Claim 6
Dependent Claim 11 words
The lithography mask of claim 3 wherein the absorber is homogeneous.
Claim 7
Dependent Claim 11 words
The lithography mask of claim 5 wherein the attenutator is tungsten.
Claim 8
Dependent Claim 11 words
The lithography mask of claim 5 wherein the attenuator is gold.
Claim 9
Dependent Claim 15 words
The lithography mask of claim 3 wherein the attenuator comprises alloys or gold and silver.
Claim 10
Dependent Claim 16 words
The lithography mask of claim 3 wherein the attenuator comprises alternating layers of gold and silver.
Claim 11
Dependent Claim 15 words
The lithography mask of claim 3 wherein the attenuator comprises alloys of copper and gold.
Claim 12
Dependent Claim 16 words
The lithography mask of claim 3 wherein the attenuator comprises alternating layers of copper and gold.
Claim 13
Dependent Claim 25 words
The lithography masks of claim 4 wherein the multilayer film comprises alternating layers of a high atomic number material and a low atomic number material.
Claim 14
Dependent Claim 22 words
The lithography mask of claim 12 wherein the high atomic number material is tungsten and the low atomic number material is carbon.
Claim 15
Dependent Claim 55 words
X-ray lithography mask including open features and an attenuator whose material and thickness are selected to both pass a fraction of the incident x-rays and to phase shift the x-rays relative to those passing through open features of the mask by approximately an odd multiple of π radians in order to reduce deleterious diffraction effects.
Claim 16
Dependent Claim 55 words
X-ray lithography mask including open features and an attenuator whose material and thickness are selected to both pass a fraction of the incident x-rays and to phase shift the x-rays relative to those passing through open features of the mask by approximately an odd multiple of π radians in order to reduce deleterious diffraction effects.
Claim 17
Dependent Claim 14 words
The x-ray lithography mask of claim 14 wherein he attenuator is an x-ray absorber.
Claim 18
Dependent Claim 22 words
The x-ray lithography mask of claim 14 wherein the attenuator is a multilayer film adapted to attenuate x radiation by back reflection.
Claim 19
Dependent Claim 16 words
The lithography mask of claim 2 wherein the attenuator transmits approximately 10% of the incident radiation.
Claim 20
Dependent Claim 86 words
Mask for optical and ultra-violet radiation comprising a transparent substrate and an attenuator pattern on the substrate, in which, in order to reduce deleterious diffraction effects, the material and thickness of the attenuator pattern are selected to pass a fraction of the incident radiation, and the open features of the transparent substrate include a relief portion adjusting the phase of the non-attenuated portion of the radiation such that the relative phase shift between the attenuated and non-attentuated radiation is approximately an odd multiple of π radians.
Claim 21
Dependent Claim 86 words
Mask for optical and ultra-violet radiation comprising a transparent substrate and an attenuator pattern on the substrate, in which, in order to reduce deleterious diffraction effects, the material and thickness of the attenuator pattern are selected to pass a fraction of the incident radiation, and the open features of the transparent substrate include a relief portion adjusting the phase of the non-attenuated portion of the radiation such that the relative phase shift between the attenuated and non-attentuated radiation is approximately an odd multiple of π radians.

References Cited (Backward Citations)

US3743842A Cited
US4388728A Cited
US4360586A Cited
US4488799A Cited
US4514857A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-12-25 1993-06-26 1993-12-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-12-25 1997-06-26 1997-12-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-12-25 2001-06-26 2001-12-26 $7700.00 Window Closed / Lapsed

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