Patent US6086990A successfully refreshed from Google Patents.
US6086990A
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High thermal conductivity silicon nitride circuit substrate and semiconductor device using the same
Assignee: Toshiba Corp
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Filing: 1996-09-26
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Granted: 2000-07-11
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Expires: 2016-09-26
Abstract
Abstract Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25 DEG C. of 60 W/mxK or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.
Inventors
- 👤 Hiroyasu Sumino
- 👤 Akihiro Horiguchi
- 👤 Mitsuo Kasori
- 👤 Fumio Ueno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; H; H10; H10W; H10W99/00; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C04B35/593; C04B35/5935; C04B35/622; C04B35/626; C04B35/63; C04B35/638; C04B41/45; C04B41/52; C04B41/80; C04B41/81; C04B41/89; H05; H05K; H05K3/00; H05K3/38; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; C04B2111/00; C04B2111/00474; C04B2111/00844; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/32; C04B2235/3201; C04B2235/3203; C04B2235/3205; C04B2235/3206; C04B2235/3208; C04B2235/3213; C04B2235/3215; C04B2235/3217; C04B2235/3224; C04B2235/3225; C04B2235/3262; C04B2235/327; C04B2235/3272; C04B2235/34; C04B2235/3409; C04B2235/38; C04B2235/3852; C04B2235/3873; C04B2235/3878; C04B2235/3895; C04B2235/50; C04B2235/54; C04B2235/5418; C04B2235/5445; C04B2235/65; C04B2235/656; C04B2235/6565; C04B2235/70; C04B2235/72; C04B2235/74; C04B2235/77; C04B2235/80; C04B2235/85; C04B2235/96; C04B2235/9607; C04B2237/00; C04B2237/02; C04B2237/04; C04B2237/06; C04B2237/064; C04B2237/068; C04B2237/30; C04B2237/40; C04B2237/402; C04B2237/405; C04B2237/407; C04B2237/50; C04B2237/70; C04B2237/704; C04B2237/706; C04B2237/708; C04B2237/72; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H10W72/00; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
105 words
A high thermal conductivity silicon nitride circuit substrate which comprises: a silicon nitride ceramic plate having a thermal conductivity at 25° C. of 60 W/m·K or more, which contains a rare earth element in an amount of 1.0 to 12.5% by weight calculated on oxide, and contains lithium, sodium, potassium, iron, calcium, magnesium, strontium, barium, manganese and boron in a total amount of 0.3% or less by weight as impurity cationic elements; and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least element selected from the group consisting of titanium, zirconium, hafnium and niobium.
Claim 2
Dependent Claim
105 words
A high thermal conductivity silicon nitride circuit substrate which comprises: a silicon nitride ceramic plate having a thermal conductivity at 25° C. of 60 W/m·K or more, which contains a rare earth element in an amount of 1.0 to 12.5% by weight calculated on oxide, and contains lithium, sodium, potassium, iron, calcium, magnesium, strontium, barium, manganese and boron in a total amount of 0.3% or less by weight as impurity cationic elements; and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least element selected from the group consisting of titanium, zirconium, hafnium and niobium.
Claim 3
Dependent Claim
48 words
The substrate according to claim 1, wherein the silicon nitride ceramic plate comprises silicon nitride particles and a grain boundary phase, and a crystalline compound phase which exists in the grain boundary phase has a volume which corresponds to 20% or more of the whole grain boundary phase.
Claim 4
Dependent Claim
18 words
The substrate according to claim 1, wherein the intermediate layer has a thickness of 0.5 to 10 μm.
Claim 5
Dependent Claim
16 words
The substrate according to claim 1, wherein the metal circuit plate comprises copper, aluminum or nickel.
Claim 6
Dependent Claim
91 words
A high thermal conductivity silicon nitride circuit substrate which comprises: a silicon nitride ceramic plate having a thermal conductivity at 25° C. of 60 W/m·K or more which contains a rare earth element in an amount of 1.0 to 12.5% by weight calculated on oxide, and contains lithium, sodium, potassium, iron, calcium magnesium strontium. barium. manganese and boron in a total amount of 0.3% or less by weight as impurity cationic elements; and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing aluminum oxide.
Claim 7
Dependent Claim
91 words
A high thermal conductivity silicon nitride circuit substrate which comprises: a silicon nitride ceramic plate having a thermal conductivity at 25° C. of 60 W/m·K or more which contains a rare earth element in an amount of 1.0 to 12.5% by weight calculated on oxide, and contains lithium, sodium, potassium, iron, calcium magnesium strontium. barium. manganese and boron in a total amount of 0.3% or less by weight as impurity cationic elements; and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing aluminum oxide.
Claim 8
Dependent Claim
48 words
The substrate according to claim 5, wherein the silicon nitride ceramic plate comprises silicon nitride particles and a grain boundary phase, and a crystalline compound phase which exists in the grain boundary phase has a volume which corresponds to 20% or more of the whole grain boundary phase.
Claim 9
Dependent Claim
18 words
The substrate according to claim 5, wherein the intermediate layer has a thickness of 0.5 to 10 μm.
Claim 10
Dependent Claim
16 words
The substrate according to claim 5, wherein the metal circuit plate comprises copper, aluminum or nickel.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |