US4608354A
Expired / Lapsed
US
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Silicon nitride substrate
Assignee: Verizon Laboratories Inc
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Filing: 1984-12-24
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Granted: 1986-08-26
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Expires: 2004-12-24
Abstract
Abstract A densified silicon nitride/magnesium oxide article which can be used as a substrate for a silicon device such as an integrated circuit chip is made by a unique process which imparts to the densified article of the combined properties of high relative density, low relative dielectric constant, low dielectric loss tangent, high thermal conductivity, thermal expansion coefficient matched to that of silicon, and a high modulus of rupture without hot pressing.
Inventors
- 👤 Frank J. Avella
- 👤 Leslie J. Bowen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:20
CPC Classifications
H; H10; H10W; H10W99/00; C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C04B35/593; C04B35/5935; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
189 words
A method of making a densified silicon nitride article having a low relative dielectric constant, a low dielectric loss tangent, a high thermal conductivity, a thermal expansion coefficient similar to silicon, and a high modulus of rupture comprising the steps of: Step 1--ball milling silicon nitride powder, from about 2 to about 15 w/o magnesium oxide, and an organic binder in an organic solvent to form a homogeneous slurry; Step 2--drying the homogeneous slurry from step 1 in an inert atmosphere to form a dry powder; Step 3--dry ball milling the product from step 2; Step 4--compacting the product from step 3 to form a compact; Step 5--heating the product from step 4 in air at a temperature and for a length of time sufficient to remove the organic binder to form a green compact having a density from about 59% to about 65% of theoretical density; and Step 6--sintering the product from step 5 at a temperature equal to or greater than 1,650° C. in a nitrogen atmosphere and for a time sufficient to form a densified silicon nitride article having a density greater than 97.5% of theoretical.
Claim 2
Independent Claim
189 words
A method of making a densified silicon nitride article having a low relative dielectric constant, a low dielectric loss tangent, a high thermal conductivity, a thermal expansion coefficient similar to silicon, and a high modulus of rupture comprising the steps of: Step 1--ball milling silicon nitride powder, from about 2 to about 15 w/o magnesium oxide, and an organic binder in an organic solvent to form a homogeneous slurry; Step 2--drying the homogeneous slurry from step 1 in an inert atmosphere to form a dry powder; Step 3--dry ball milling the product from step 2; Step 4--compacting the product from step 3 to form a compact; Step 5--heating the product from step 4 in air at a temperature and for a length of time sufficient to remove the organic binder to form a green compact having a density from about 59% to about 65% of theoretical density; and Step 6--sintering the product from step 5 at a temperature equal to or greater than 1,650° C. in a nitrogen atmosphere and for a time sufficient to form a densified silicon nitride article having a density greater than 97.5% of theoretical.
Claim 3
Dependent Claim
242 words
A densified silicon nitride article consisting essentially from about 2 to about 15 w/o magnesia with the remainder being silicon nitride, said silicon nitride article having a dielectric constant less than 8, a dielectric loss tangent less than 0.005, a thermal conductivity greater than 50 W/mK, a thermal expansion coefficient from about 70 to about 90% of silicon, a modulus of rupture greater than 70,000 psi and an absolute density from about 3.12 g cm -3 to about 3.20 gm cm -3 , the densified silicon nitride article being made by the steps following: Step 1--ball milling silicon nitride powder, from about 2 to about 15 w/o magnesium oxide, and an organic binder in an organic solvent to form a homogeneous slurry; Step 2--drying the homogeneous slurry from step 1 in an inert atmosphere to form a dry powder; Step 3--dry ball milling the product from step 2; Step 4--compacting the product from step 3 to form a compact; Step 5--heating the product from step 4 in air at a temperature and for a length of time sufficient to remove the organic binder to form a green compact having a density from about 59% to about 65% of theoretical density; and Step 6--sintering the product from step 5 at a temperature equal to or greater than 1,650° C. in a nitrogen atmosphere and for a time sufficient to form a densified silicon nitride article having a density greater than 97.5% of theoretical.
Claim 4
Dependent Claim
242 words
A densified silicon nitride article consisting essentially from about 2 to about 15 w/o magnesia with the remainder being silicon nitride, said silicon nitride article having a dielectric constant less than 8, a dielectric loss tangent less than 0.005, a thermal conductivity greater than 50 W/mK, a thermal expansion coefficient from about 70 to about 90% of silicon, a modulus of rupture greater than 70,000 psi and an absolute density from about 3.12 g cm -3 to about 3.20 gm cm -3 , the densified silicon nitride article being made by the steps following: Step 1--ball milling silicon nitride powder, from about 2 to about 15 w/o magnesium oxide, and an organic binder in an organic solvent to form a homogeneous slurry; Step 2--drying the homogeneous slurry from step 1 in an inert atmosphere to form a dry powder; Step 3--dry ball milling the product from step 2; Step 4--compacting the product from step 3 to form a compact; Step 5--heating the product from step 4 in air at a temperature and for a length of time sufficient to remove the organic binder to form a green compact having a density from about 59% to about 65% of theoretical density; and Step 6--sintering the product from step 5 at a temperature equal to or greater than 1,650° C. in a nitrogen atmosphere and for a time sufficient to form a densified silicon nitride article having a density greater than 97.5% of theoretical.
Claim 5
Dependent Claim
20 words
A silicon nitride substrate for silicon microelectronic chips made from the densified silicon nitride article in accordance with claim 2.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-25 | 1990-02-24 | 1990-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-25 | 1994-02-24 | 1994-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-25 | 1998-02-24 | 1998-08-26 | $7700.00 | Window Closed / Lapsed |