US6084304A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Structure of metallization
Assignee: United Microelectronics Corp
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Filing: 1998-06-05
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Granted: 2000-07-04
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Expires: 2018-06-05
Abstract
Abstract A metallization structure comprises a semiconductor substrate and pre-formed multi-interconnect layer, which include a passivation layer deposited on the top copper layer of the multi-interconnect layer, a pad window, and a non-copper thin conductive film. The non-copper thin conductive film is deposited in the pad window to protect the top copper layer from exposure to the air. The non-copper thin conductive film includes aluminum, tantalum, TaN, TiN, or WN.
Inventors
- 👤 Yimin Huang
- 👤 Tri-Rung Yew
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W72/00; H10W72/071; H10W72/075; H10W72/90; H10W72/921; H10W72/923
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
153 words
A metallization structure, comprising: a semiconductor substrate, having a multi-interconnect layer; a top copper layer, deposited on the multi-interconnect layer; a passivation layer, deposited on the top copper layer, wherein a pad window is formed in the passivation layer to expose a portion of the top copper layer; and a conductive film, only formed on, and substantially fully covering an inner peripheral surface of the pad window including a vertical sidewall and a portion of the top copper layer exposed by the pad window, wherein the conductive film is used to protect the top copper layer from exposure to air, and includes a material other than copper, wherein the conductive film results from a preliminary conductive film which covers over the passivation layer and the inner peripheral surface of the pad window, and a portion of the preliminary conductive layer above the passivation layer is removed by a chemical mechanical polish (CMP) technology.
Claim 2
Dependent Claim
153 words
A metallization structure, comprising: a semiconductor substrate, having a multi-interconnect layer; a top copper layer, deposited on the multi-interconnect layer; a passivation layer, deposited on the top copper layer, wherein a pad window is formed in the passivation layer to expose a portion of the top copper layer; and a conductive film, only formed on, and substantially fully covering an inner peripheral surface of the pad window including a vertical sidewall and a portion of the top copper layer exposed by the pad window, wherein the conductive film is used to protect the top copper layer from exposure to air, and includes a material other than copper, wherein the conductive film results from a preliminary conductive film which covers over the passivation layer and the inner peripheral surface of the pad window, and a portion of the preliminary conductive layer above the passivation layer is removed by a chemical mechanical polish (CMP) technology.
Claim 3
Dependent Claim
21 words
The structure of claim 1, which further includes an insulation film deposited between the passivation layer and the top copper layer.
Claim 4
Dependent Claim
11 words
The structure of claim 2, wherein the insulation film includes SiN.
Claim 5
Dependent Claim
11 words
The structure of claim 2, wherein the insulation film includes SiON.
Claim 6
Dependent Claim
12 words
The structure of claim 1, wherein the passivation layer includes phosphosilicate glass.
Claim 7
Dependent Claim
11 words
The structure of claim 1, wherein the passivation layer includes SiN.
Claim 8
Dependent Claim
11 words
The structure of claim 1, wherein the conductive film includes aluminum.
Claim 9
Dependent Claim
11 words
The structure of claim 1, wherein the conductive film includes tantalum.
Claim 10
Dependent Claim
11 words
The structure of claim 1, wherein the conductive film includes TaN.
Claim 11
Dependent Claim
11 words
The structure of claim 1, wherein the conductive film includes TiN.
Claim 12
Dependent Claim
11 words
The structure of claim 1, wherein the conductive film includes WN.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-04 | 2004-01-03 | 2004-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-04 | 2008-01-03 | 2008-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-04 | 2012-01-03 | 2012-07-04 | $7700.00 | Window Closed / Lapsed |