US5272376A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrode structure for a semiconductor device
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1992-07-14
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Granted: 1993-12-21
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Expires: 2012-07-14
Abstract
Abstract According to the present invention oxidation of Cu at wire bonding in a pad electrode using a Cu thin film as well as oxidation of Cu at wireless bonding in a bump electrode using a Cu thin film can be prevented.
Inventors
- 👤 Hiroshi Ueno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/00; H10W72/20; H10W72/071; H10W72/075; H10W72/251; H10W72/29; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
139 words
An electrode structure, comprising a pad electrode in the form of a Cu film electrically connected to a surface of a semiconductor substrate, and a further film which is provided on said pad electrode, which has a thickness sufficiently thin so that said further film can be easily broken when bonding of a part to said pad electrode through said further film is carried out in a manner substantially identical to that suitable for bonding said part to said pad electrode in the absence of said further film, which is sufficiently thick so that said further film resists oxidation of said Cu film, and which has a property of preventing mutual diffusion with respect to Cu, wherein when said further film is broken the part forms a junction with said Cu film through a break in said further film.
Claim 2
Dependent Claim
139 words
An electrode structure, comprising a pad electrode in the form of a Cu film electrically connected to a surface of a semiconductor substrate, and a further film which is provided on said pad electrode, which has a thickness sufficiently thin so that said further film can be easily broken when bonding of a part to said pad electrode through said further film is carried out in a manner substantially identical to that suitable for bonding said part to said pad electrode in the absence of said further film, which is sufficiently thick so that said further film resists oxidation of said Cu film, and which has a property of preventing mutual diffusion with respect to Cu, wherein when said further film is broken the part forms a junction with said Cu film through a break in said further film.
Claim 3
Dependent Claim
24 words
An electrode structure according to claim 1, wherein said further film is made of a metal which is one of Ti, W and Ta.
Claim 4
Dependent Claim
33 words
An electrode structure according to claim 1, wherein said further film is made of a compound which is one of Al 2 O 3 , TiN, TiSi 2 , and WSi 2 .
Claim 5
Dependent Claim
128 words
An electrode structure, comprising a bump electrode of Cu formed on a surface of a semiconductor substrate, and a film which is provided on said bump electrode, which has a thickness sufficiently thin so that said film can be easily broken when bonding of a part to said bump electrode through said film is carried out in a manner substantially identical to that suitable for bonding said part to said bump electrode in the absence of said film, which is sufficiently thick so that said film resists oxidation of said Cu bump electrode, and which has a property of preventing mutual diffusion with respect to Cu, wherein when said film is broken the part forms a junction with said Cu bump electrode through a break in said film.
Claim 6
Dependent Claim
128 words
An electrode structure, comprising a bump electrode of Cu formed on a surface of a semiconductor substrate, and a film which is provided on said bump electrode, which has a thickness sufficiently thin so that said film can be easily broken when bonding of a part to said bump electrode through said film is carried out in a manner substantially identical to that suitable for bonding said part to said bump electrode in the absence of said film, which is sufficiently thick so that said film resists oxidation of said Cu bump electrode, and which has a property of preventing mutual diffusion with respect to Cu, wherein when said film is broken the part forms a junction with said Cu bump electrode through a break in said film.
Claim 7
Dependent Claim
23 words
An electrode structure according to claim 4, wherein said film is made of a metal which is one of Ti, W and Ta.
Claim 8
Dependent Claim
32 words
An electrode structure according to claim 4, wherein said film is made of a compound which is one of Al 2 O 3 , TiN, TiSi 2 , and WSi 2 .
Claim 9
Independent Claim
63 words
An apparatus comprising: a semiconductor substrate, a Cu electrode formed on a surface of said substrate, and a film which is provided on and resists oxidation of said electrode, said film having means facilitating breaking of said film during wire bonding to said Cu pad electrode, said means including said film being made of Ti and having a thickness less than 4 nm.
Claim 10
Independent Claim
63 words
An apparatus comprising: a semiconductor substrate, a Cu electrode formed on a surface of said substrate, and a film which is provided on and resists oxidation of said electrode, said film having means facilitating breaking of said film during wire bonding to said Cu pad electrode, said means including said film being made of Ti and having a thickness less than 4 nm.
Claim 11
Dependent Claim
107 words
An electrode structure, comprising a pad electrode in the form of a Cu film electrically connected to a surface of a semiconductor substrate, and a further film made of Ti provided on said pad electrode and having a thickness less than 4 nm so that said further film can be easily broken during bonding of a part to said pad electrode through said further film, said further film having an anti-oxidation property, and having a property of preventing mutual diffusion with respect to Cu, wherein when said further film is broken the part forms a junction with said Cu film through a break in said further film.
Claim 12
Dependent Claim
107 words
An electrode structure, comprising a pad electrode in the form of a Cu film electrically connected to a surface of a semiconductor substrate, and a further film made of Ti provided on said pad electrode and having a thickness less than 4 nm so that said further film can be easily broken during bonding of a part to said pad electrode through said further film, said further film having an anti-oxidation property, and having a property of preventing mutual diffusion with respect to Cu, wherein when said further film is broken the part forms a junction with said Cu film through a break in said further film.
Claim 13
Dependent Claim
96 words
An electrode structure, comprising a bump electrode of Cu formed on a surface of a semiconductor substrate, and a film made of Ti provided on said bump electrode and having a thickness less than 4 nm so that said film can be easily broken during bonding of a part to said bump electrode through said film, said film having an anti-oxidation property, and having a property of preventing mutual diffusion with respect to Cu, wherein when said film is broken the part forms a junction with said Cu bump electrode through a break in said film.
Claim 14
Dependent Claim
96 words
An electrode structure, comprising a bump electrode of Cu formed on a surface of a semiconductor substrate, and a film made of Ti provided on said bump electrode and having a thickness less than 4 nm so that said film can be easily broken during bonding of a part to said bump electrode through said film, said film having an anti-oxidation property, and having a property of preventing mutual diffusion with respect to Cu, wherein when said film is broken the part forms a junction with said Cu bump electrode through a break in said film.
References Cited (Backward Citations)
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