Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds

Claim 2

A chemical vapor deposition method comprising the following steps: forming a first layer on a semiconductor wafer in a reactor from an organic precursor, the first layer comprising predominately an inorganic material, the first layer also comprising incorporated carbon in the form of a carbide; and after forming the first layer, injecting a component gas into the reactor and generating a plasma from the component gas within the reactor, the component gas comprising Ar and providing an activated component which is effective to remove the carbon of the carbide from the first layer.

Claim 3

A chemical vapor deposition method comprising the following steps: forming a first layer on a semiconductor wafer by injecting an organic precursor into a reactor, the first layer comprising predominately an inorganic material, the first layer also comprising incorporated carbon in the form of a carbide; after forming the first layer, ceasing to inject the organic precursor into the reactor and first injecting a component gas into the reactor and generating a first plasma from the component gas within the reactor, the component gas comprising Ar and providing an activated component which is effective to remove the carbon of the carbide from the first layer, the component gas providing a bonding component which replaces and substitutes for the carbon displaced from the carbide in the first layer; after the first plasma treatment, injecting the organic precursor to within the reactor having the wafer positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to form a second layer on the wafer, the second layer comprising carbon in the form of a carbide; and after forming the second layer, ceasing to inject the organic precursor into the reactor and second injecting the component gas into the reactor and generating a second plasma from the component gas within the reactor, the component gas providing an activated component which is effective to remove the carbon of the carbide from the second layer.

Claim 4

A chemical vapor deposition method comprising the following steps: forming a first layer on a semiconductor wafer by injecting an organic precursor into a reactor, the first layer comprising predominately an inorganic material, the first layer also comprising incorporated carbon in the form of a carbide; after forming the first layer, ceasing to inject the organic precursor into the reactor and first injecting a component gas into the reactor and generating a first plasma from the component gas within the reactor, the component gas comprising Ar and providing an activated component which is effective to remove the carbon of the carbide from the first layer, the component gas providing a bonding component which replaces and substitutes for the carbon displaced from the carbide in the first layer; after the first plasma treatment, injecting the organic precursor to within the reactor having the wafer positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to form a second layer on the wafer, the second layer comprising carbon in the form of a carbide; and after forming the second layer, ceasing to inject the organic precursor into the reactor and second injecting the component gas into the reactor and generating a second plasma from the component gas within the reactor, the component gas providing an activated component which is effective to remove the carbon of the carbide from the second layer.