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US6066557A
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Method for fabricating protected copper metallization
Assignee: Advanced Micro Devices Inc
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Filing: 1998-12-09
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Granted: 2000-05-23
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Expires: 2018-12-09
Abstract
Abstract Reliable copper or copper alloy interconnection patterns are formed by forming a protective barrier layer lining a via or contact hole exposing an underlying conductive feature. Embodiments include forming a barrier layer on the insulating layer lining the side surfaces and on the exposed nitride layer before exposing a portion of the underlying conductive feature. The barrier layer prevents copper from depositing on the sidewalls of the dielectric interlayer and diffusing through the ILD.
Inventors
- 👤 Todd P. Lukanc
- 👤 Dirk Brown
- 👤 Takeshi Nogami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/034; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
134 words
A method of manufacturing a semiconductor device, which method comprises: forming a nitride layer on an underlying conductive feature; forming an insulating layer on the nitride layer; forming a photoresist mask having a pattern on the insulating layer; forming an opening in the insulating layer having side surfaces thereon and exposing at least a portion of the upper surface of the nitride layer, wherein the underlying conductive feature is not exposed, depositing a barrier layer on the insulating layer lining the side surfaces and on the exposed nitride layer; removing a portion of the barrier layer on the nitride layer, and removing the underlying nitride layer to extend the opening exposing a portion of the underlying conductive feature, wherein said barrier layer substantially prevents free metal from depositing on sidewalls of the insulating layer.
Claim 2
Independent Claim
134 words
A method of manufacturing a semiconductor device, which method comprises: forming a nitride layer on an underlying conductive feature; forming an insulating layer on the nitride layer; forming a photoresist mask having a pattern on the insulating layer; forming an opening in the insulating layer having side surfaces thereon and exposing at least a portion of the upper surface of the nitride layer, wherein the underlying conductive feature is not exposed, depositing a barrier layer on the insulating layer lining the side surfaces and on the exposed nitride layer; removing a portion of the barrier layer on the nitride layer, and removing the underlying nitride layer to extend the opening exposing a portion of the underlying conductive feature, wherein said barrier layer substantially prevents free metal from depositing on sidewalls of the insulating layer.
Claim 3
Dependent Claim
18 words
The method according to claim 1, wherein the nitride layer comprises a silicon nitride or a silicon oxynitride.
Claim 4
Dependent Claim
13 words
The method according to claim 1, wherein the insulating layer comprises an oxide.
Claim 5
Dependent Claim
31 words
The method of claim 1, comprising: depositing the barrier layer on the insulating layer and on the exposed nitride layer at a thickness of about 100 Å to about 300 Å.
Claim 6
Dependent Claim
21 words
The method of claim 4, comprising depositing the barrier layer at a thickness of about 200 Å to about 250 Å.
Claim 7
Dependent Claim
25 words
The method of claim 1, comprising depositing the barrier layer on the side surfaces at a thickness of about 20 Å to about 100 Å.
Claim 8
Dependent Claim
37 words
The method of claim 1, wherein the barrier layer comprises tantalum (Ta), Ta nitride (TaN), Ta alloys, Ta silicon nitride (TaSiN), tungsten (W) W alloys, W silicon nitrides (WSiN), titanium (Ti), Ti alloys or Ti nitride (TiN).
Claim 9
Dependent Claim
17 words
The method of claim 1, comprising: removing the barrier layer and underlying nitride layer by anisotropic etching.
Claim 10
Dependent Claim
20 words
The method of claim 8, further comprising: removing the barrier layer and underlying nitride layer in a single etching step.
Claim 11
Dependent Claim
26 words
The method of claim 1, comprising: removing the barrier layer and underlying nitride layer without changing the thickness of the barrier material lining the side surfaces.
Claim 12
Dependent Claim
21 words
The method of claim 1, further comprising: depositing a second barrier layer on the insulating layer before forming the photoresist mask.
Claim 13
Dependent Claim
34 words
The method of claim 1, wherein: the underlying conductive feature comprises copper (Cu) or a Cu alloy and the barrier material lining the side surfaces prevents the insulating layer from exposure to free Cu.
Claim 14
Dependent Claim
15 words
The method of claim 1, further comprising: removing the photoresist before depositing the barrier layer.
Claim 15
Dependent Claim
45 words
The method of claim 1, further comprising: electroless plating or electroplating copper (Cu) or a Cu alloy on an upper surface of the underlying conductive feature and filling the through-hole; and, planarizing the upper surface of the Cu or Cu alloy by chemical mechanical polishing.
Claim 16
Dependent Claim
13 words
The method according to claim 1, wherein the opening is a trench opening.
Claim 17
Dependent Claim
20 words
The method according to claim 15, wherein the opening further comprises a via or contact hole communicating with the trench.
Claim 18
Dependent Claim
19 words
The method according to claim 14, further comprising: cleaning the planarized upper surface of the Cu or Cu alloy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-23 | 2003-11-22 | 2004-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-23 | 2007-11-22 | 2008-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-23 | 2011-11-22 | 2012-05-23 | $7700.00 | Window Closed / Lapsed |