US6040248A
Expired / Lapsed
US
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Chemistry for etching organic low-k materials
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1998-06-24
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Granted: 2000-03-21
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Expires: 2018-06-24
Abstract
Abstract A process for plasma etching of contact and via openings in low-k organic polymer dielectric layers is described which overcomes problems of sidewall bowing and hardmask pattern deterioration by etching the organic layer in a high density plasma etcher with a chlorine/inert gas plasma. By adding chlorine to the oxygen/inert gas plasma, the development of an angular aspect or faceting of the hardmask pattern edges by ion bombardment is abated. Essentially vertical sidewalls are obtained in the openings etched in the organic polymer layer while hardmask pattern integrity is maintained. The addition of a passivating agent such as nitrogen, BCl 3 , or CHF 3 to the etchant gas mixture further improves the sidewall profile by reducing bowing through protective polymer formation.
Inventors
- 👤 Chao-Cheng Chen
- 👤 Ming-Hsin Huang
- 👤 Hun-Jan Tao
- 👤 Chia-Shiung Tsai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:36
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
73 words
A method for patterning an opening in an organic polymer layer on a substrate comprising: (a) providing a substrate having an organic polymer layer; (b) forming a hardmask over said organic polymer layer; and (c) anisotropically etching said organic polymer layer in a high density plasma etcher with an etchant gas containing oxygen and chlorine, under conditions which preserve the pattern integrity of the hardmask and form an essentially un-bowed, vertical profiled opening.
Claim 2
Independent Claim
73 words
A method for patterning an opening in an organic polymer layer on a substrate comprising: (a) providing a substrate having an organic polymer layer; (b) forming a hardmask over said organic polymer layer; and (c) anisotropically etching said organic polymer layer in a high density plasma etcher with an etchant gas containing oxygen and chlorine, under conditions which preserve the pattern integrity of the hardmask and form an essentially un-bowed, vertical profiled opening.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein said organic polymer layer is selected from the group consisting of a poly(arylene ether) and a polyimide.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said hardmask comprises silicon oxide.
Claim 5
Dependent Claim
89 words
The method of claim 1 wherein said conditions comprise flowing said oxygen at a flow rate of between about 10 and 60 SCCM, and said chlorine at a flow rate of between about 10 and 60 SCCM and an inert carrier gas at a flow rate adjusted to maintain a chamber pressure of between about 6 and 10 mTorr in a plasma, struck in said high density plasma etcher, having an rf power of between about 500 and 1,200 Watts TCP and between about 400 and 800 Watts BIAS.
Claim 6
Dependent Claim
15 words
The method of claim 1 further comprising adding a passivating agent to said etchant gas.
Claim 7
Dependent Claim
26 words
The method of claim 5 wherein said passivating agent is selected from the group consisting of N 2 , BCl 3 , and CHF 3 .
Claim 8
Independent Claim
83 words
A method for forming a contact on a semiconductor wafer comprising: (a) providing a semiconductor wafer; (b) forming a organic polymer layer on said semiconductor wafer; (c) patterning a hardmask on said organic polymer layer; (d) anisotropically etching said organic polymer layer in a high density plasma) etcher with an etchant gas containing oxygen and chlorine, under conditions which preserve the pattern integrity of the hardmask and form an essentially un-bowed, vertical profiled opening; and (e) forming a conductive contact in said opening.
Claim 9
Independent Claim
83 words
A method for forming a contact on a semiconductor wafer comprising: (a) providing a semiconductor wafer; (b) forming a organic polymer layer on said semiconductor wafer; (c) patterning a hardmask on said organic polymer layer; (d) anisotropically etching said organic polymer layer in a high density plasma) etcher with an etchant gas containing oxygen and chlorine, under conditions which preserve the pattern integrity of the hardmask and form an essentially un-bowed, vertical profiled opening; and (e) forming a conductive contact in said opening.
Claim 10
Dependent Claim
23 words
The method of claim 7 wherein said organic polymer layer is selected from the group consisting of a poly(arylene ether) and a polyimide.
Claim 11
Dependent Claim
11 words
The method of claim 7 wherein said hardmask comprises silicon oxide.
Claim 12
Dependent Claim
89 words
The method of claim 7 wherein said conditions comprise flowing said oxygen at a flow rate of between about 10 and 60 SCCM, and said chlorine at a flow rate of between about 10 and 60 SCCM and an inert carrier gas at a flow rate adjusted to maintain a chamber pressure of between about 6 and 10 mTorr in a plasma, struck in said high density plasma etcher, having an rf power of between about 500 and 1,200 Watts TCP and between about 400 and 800 Watts BIAS.
Claim 13
Dependent Claim
15 words
The method of claim 7 further comprising adding a passivating agent to said etchant gas.
Claim 14
Dependent Claim
26 words
The method of claim 11 wherein said passivating agent is selected from the group consisting of N 2 , BCl 3 , and CHF 3 .
Claim 15
Independent Claim
102 words
A method for forming a via on a semiconductor wafer comprising: (a) providing a semiconductor wafer having a first conductive layer; (b) forming a organic polymer layer on said first conductive layer; (c) forming a hardmask over said organic polymer layer; (d) anisotropically etching said organic polymer layer in a high density plasma etcher with an etchant gas containing oxygen and chlorine, under conditions which preserve the pattern integrity of the hardmask and form an essentially un-bowed, vertical profiled opening in said organic polymer layer exposing a region of said first conductive layer; and (e) forming a conductive via in said opening.
Claim 16
Independent Claim
102 words
A method for forming a via on a semiconductor wafer comprising: (a) providing a semiconductor wafer having a first conductive layer; (b) forming a organic polymer layer on said first conductive layer; (c) forming a hardmask over said organic polymer layer; (d) anisotropically etching said organic polymer layer in a high density plasma etcher with an etchant gas containing oxygen and chlorine, under conditions which preserve the pattern integrity of the hardmask and form an essentially un-bowed, vertical profiled opening in said organic polymer layer exposing a region of said first conductive layer; and (e) forming a conductive via in said opening.
Claim 17
Dependent Claim
23 words
The method of claim 13 wherein said organic polymer layer is selected from the group consisting of a poly(arylene ether) and a polyimide.
Claim 18
Dependent Claim
11 words
The method of claim 13 wherein said hardmask comprises silicon oxide.
Claim 19
Dependent Claim
89 words
The method of claim 13 wherein said conditions comprise flowing said oxygen at a flow rate of between about 10 and 60 SCCM, and said chlorine at a flow rate of between about 10 and 60 SCCM and an inert carrier gas at a flow rate adjusted to maintain a chamber pressure of between about 6 and 10 mTorr in a plasma, struck in said high density plasma etcher, having an if power of between about 500 and 1,200 Watts TCP and between about 400 and 800 Watts BIAS.
Claim 20
Dependent Claim
15 words
The method of claim 13 further comprising adding a passivating agent to said etchant gas.
Claim 21
Dependent Claim
26 words
The method of claim 17 wherein said passivating agent is selected from the group consisting of N 2 , BCl 3 , and CHF 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-21 | 2003-09-20 | 2004-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-21 | 2007-09-20 | 2008-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-21 | 2011-09-20 | 2012-03-21 | $7700.00 | Window Closed / Lapsed |