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US6034548A Expired / Lapsed US ⏱️ 0.0 years remaining

Programmable delay element

Assignee: Xilinx Inc
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Filing: 1998-08-05
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Granted: 2000-03-07
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Expires: 2018-08-05
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Abstract

Abstract The invention provides a programmable delay element and a programmable slew rate element to allow post-fabrication adjustment and programming of input delay and output slew rate to iteratively alter input delay and output slew rate without redesign and refabrication of the circuit. The invention provides programmable memory cells coupled to a capacitive load via a plurality of switches. The capacitive load is coupled to a signal path and comprises a plurality of capacitors. The programmable memory cells selectively turn on the switches coupled to the capacitive load. In one FPGA implementation, the programmable memory cells are implemented in IOBs and are loaded with appropriate data during a device configuration stage. Delay equalization can be achieved by programming the memory cells such that the delays seen by device I/O pins are equal between IOBs and pads. The invention also provides a slew rate control circuit for an inverter or a buffer to provide an optimal slew rate. The slew rate control circuit comprises a plurality of memory cells coupled to a current mirror via a plurality of switches. Appropriate data are programmed or loaded into the memory cells to selectively turn the switches coupled to a current source on or off. The current mirror is also coupled to the inverter or buffer to control its supply current. The slew rate of the inverter or buffer is controlled via the memory cell programming.

Inventors

  • 👤 Stephen Churcher
  • 👤 Simon A. Longstaff

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 20:37
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/003; H03K19/00346; H03K19/00361; H03K5/00; H03K5/13; H03K5/131; H03K5/133; H03K2005/00013; H03K2005/00019; H03K2005/00058; H03K2005/00065; H03K2005/00071; H03K2005/0015; H03K2005/00195; H03K2005/00208

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 62 words
A slew rate control circuit for an inverter comprising: at least one switch coupled to a current source; at least one memory cell coupled to said at least one switch; a first current mirror coupled to said at least one switch; a second current mirror coupled to said first current mirror; and an inverter coupled to said first and second current mirrors.
Claim 2
Dependent Claim 62 words
A slew rate control circuit for an inverter comprising: at least one switch coupled to a current source; at least one memory cell coupled to said at least one switch; a first current mirror coupled to said at least one switch; a second current mirror coupled to said first current mirror; and an inverter coupled to said first and second current mirrors.
Claim 3
Dependent Claim 16 words
The circuit of claim 1 wherein said at least one switch includes a CMOS transmission gate.
Claim 4
Dependent Claim 16 words
The circuit of claim 1 wherein said at least one switch includes an NMOS pass transistor.
Claim 5
Dependent Claim 16 words
The circuit of claim 1 wherein said at least one switch includes a PMOS pass transistor.
Claim 6
Dependent Claim 15 words
The circuit of claim 1 wherein said at least one switch includes an NPN transistor.
Claim 7
Dependent Claim 15 words
The circuit of claim 1 wherein said at least one switch includes a PNP transistor.
Claim 8
Dependent Claim 13 words
The circuit of claim 1 wherein said memory cell includes a static RAM.
Claim 9
Dependent Claim 12 words
The circuit of claim 1 wherein said memory cell includes an EEPROM.
Claim 10
Dependent Claim 13 words
The circuit of claim 1 wherein said memory cell includes a Flash memory.
Claim 11
Dependent Claim 12 words
The circuit of claim 1 wherein said memory cell includes an EPROM.
Claim 12
Dependent Claim 12 words
The circuit of claim 1 wherein said memory cell includes a flipflop.
Claim 13
Dependent Claim 65 words
The circuit of claim 1 wherein said first current mirror comprises: a first NMOS transistor having a gate and a drain coupled to said plurality of switches; a second NMOS transistor; and a third NMOS transistor coupled to said inverter, said gate of said first NMOS transistor being coupled to a gate of said second NMOS transistor and a gate of said third NMOS transistor.
Claim 14
Dependent Claim 56 words
The circuit of claim 12 wherein said second current mirror comprises: a first PMOS transistor having a gate and a drain coupled to said drain of said second NMOS transistor; and a second PMOS transistor coupled to said inverter, a gate of said second PMOS transistor being coupled to said gate of said first PMOS transistor.
Claim 15
Dependent Claim 65 words
The circuit of claim 1 wherein said first current mirror comprises: a first NPN transistor having a base and a collector coupled to said plurality of switches; a second NPN transistor; and a third NPN transistor coupled to said inverter, said base of said first NPN transistor being coupled to a base of said second NPN transistor and a base of said third NPN transistor.
Claim 16
Dependent Claim 56 words
The circuit of claim 14 wherein said second current mirror comprises: a first PNP transistor having a base and a collector coupled to said collector of said second NPN transistor; and a second PNP transistor coupled to said inverter, a base of said second PNP transistor being coupled to said base of said first PNP transistor.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-03-07 2003-09-06 2004-03-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-03-07 2007-09-06 2008-03-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-03-07 2011-09-06 2012-03-07 $7700.00 Window Closed / Lapsed

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