Abstract A semiconductor device which has an interlayer insulating film comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10 11 atoms per cm 2 . The interlayer insulating film is preferably a fluorine-containing silicon oxide film which contains a rare gas. In a manufacturing process, an interlayer insulating is formed by a chemical vapor deposition from a material gas including a silicon-containing gas, a fluorine compound gas, a rare gas, and oxygen. The silicon-containing gas is preferably SiH 4 gas, and the fluorine compound gas is preferably SiF4 gas. The flow rate of the rare gas is greater than three times the total flow rate of the SiH 4 gas and SiF 4 gas. The rare gas is at least one type of gas selected from neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
A semiconductor device having an interlayer insulating film which is comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10 11 atoms per cm 2 .
Claim 2
Dependent Claim
35 words
A semiconductor device having an interlayer insulating film which is comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10 11 atoms per cm 2 .
Claim 3
Dependent Claim
35 words
The semiconductor device as defined in claim 1, wherein the interlayer insulating film is a fluorine-containing silicon oxide film which contains a rare gas in concentration higher than 10 11 atoms per cm 2 .
Claim 4
Dependent Claim
30 words
The semiconductor device as defined in claim 1, wherein the rare gas is at least one type of gas selected from neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe).
Claim 5
Dependent Claim
35 words
A semiconductor device having an interlayer insulating film which is comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10 18 atoms per cm 3 .
Claim 6
Dependent Claim
35 words
A semiconductor device having an interlayer insulating film which is comprised of molecules with silicon-oxygen bonds and silicon-fluorine bonds and contains a rare gas in concentration higher than 10 18 atoms per cm 3 .
Claim 7
Dependent Claim
35 words
The semiconductor device as defined in claim 3, wherein the interlayer insulating film is a fluorine-containing silicon oxide film which contains a rare gas in concentration higher than 10 18 atoms per cm 3 .