US6030875A
Expired / Lapsed
US
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Method for making semiconductor device having nitrogen-rich active region-channel interface
Assignee: GlobalFoundries Inc
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Filing: 1997-12-19
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Granted: 2000-02-29
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Expires: 2017-12-19
Abstract
Abstract A semiconductor device having a nitrogen-rich active region-channel interface and process for fabrication thereof is provided. The nitrogen-rich interface can, for example, can reduce the electric field potential in this region and reduce hot carrier injection effects. Consistent with one embodiment of the invention, a semiconductor device is provided having a substrate, at least one gate electrode disposed over the substrate and an active region disposed adjacent to gate electrode. The semiconductor device further includes a channel region extending from the active region beneath the gate electrode and a nitrogen-rich region disposed at an interface between the channel region and the active region. The nitrogen-rich region may, for example, be disposed at least in part in the channel region. The nitrogen-rich region may, for example, also be disposed at least part of the active region. Further, the active region may be disposed, for example, within the nitrogen-rich region.
Inventors
- 👤 Charles E. May
- 👤 Robert Dawson
- 👤 Michael Duane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:27
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038; H10P30/208; H10P30/222; H10D62/00; H10D62/80; H10D62/83; H10D62/834
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
134 words
A process of forming a CMOS device having at least one PMOS device region and at least one NMOS device region, comprising: forming at least one PMOS electrode in the PMOS device region and at least one NMOS gate electrode in the NMOS device region; forming a PMOS nitrogen-rich region under an edge portion of the PMOS gate electrode and an NMOS nitrogen-rich region under an edge portion of the NMOS gate electrode; forming a PMOS active region adjacent the PMOS gate electrode, the PMOS nitrogen-rich region extending further under the edge portion of the PMOS gate electrode than the PMOS active region; and forming an NMOS active region adjacent the NMOS gate electrode, the NMOS nitrogen-rich region extending further under the edge portion of the NMOS gate electrode than the NMOS active region.
Claim 2
Dependent Claim
134 words
A process of forming a CMOS device having at least one PMOS device region and at least one NMOS device region, comprising: forming at least one PMOS electrode in the PMOS device region and at least one NMOS gate electrode in the NMOS device region; forming a PMOS nitrogen-rich region under an edge portion of the PMOS gate electrode and an NMOS nitrogen-rich region under an edge portion of the NMOS gate electrode; forming a PMOS active region adjacent the PMOS gate electrode, the PMOS nitrogen-rich region extending further under the edge portion of the PMOS gate electrode than the PMOS active region; and forming an NMOS active region adjacent the NMOS gate electrode, the NMOS nitrogen-rich region extending further under the edge portion of the NMOS gate electrode than the NMOS active region.
Claim 3
Dependent Claim
29 words
The process of claim 1, wherein forming the NMOS and PMOS nitrogen-rich regions includes performing a blanket implant of a nitrogen-bearing species into the NMOS and PMOS device regions.
Claim 4
Dependent Claim
43 words
The process of claim 2, further including selectively masking one of the NMOS device regions and PMOS device regions and implanting a nitrogen-bearing species into the unmasked region to increase a concentration of nitrogen in the unmasked region relative to the masked region.
Claim 5
Dependent Claim
47 words
The process of claim 1, wherein forming the NMOS and PMOS nitrogen-rich regions includes selectively masking the PMOS device region and implanting a nitrogen-bearing species into the NMOS device region and selectively masking the PMOS device region and implanting a nitrogen-bearing species into the PMOS device region.
Claim 6
Dependent Claim
28 words
The process of claim 1, wherein forming the NMOS and PMOS nitrogen-rich regions includes implanting one or more nitrogen-bearing species at an angle with respect to the substrate.
Claim 7
Dependent Claim
21 words
The process of claim 1, wherein the PMOS nitrogen-rich region has a higher concentration of nitrogen than the NMOS nitrogen-rich region.
Claim 8
Dependent Claim
21 words
The process of claim 1, wherein the PMOS nitrogen-rich region has the same concentration of nitrogen as the NMOS nitrogen-rich region.
Claim 9
Dependent Claim
21 words
The process of claim 1, wherein the NMOS nitrogen-rich region has a higher concentration of nitrogen than the PMOS nitrogen-rich region.
Claim 10
Independent Claim
117 words
A method of forming a semiconductor device, comprising: forming at least one gate electrode over a substrate; implanting a nitrogen bearing species into a substrate region adjacent the gate electrode at a non-orthogonal angle relative to the substrate to form a nitrogen-rich region in the substrate region and under an edge portion of the gate electrode; and implanting a dopant into the substrate region adjacent the gate electrode to a depth no deeper than a depth of the nitrogen bearing species implant to form an active region adjacent the gate electrode and under the edge portion of the gate electrode, the nitrogen-rich region extending further under the edge portion of the gate electrode than the active region.
Claim 11
Independent Claim
117 words
A method of forming a semiconductor device, comprising: forming at least one gate electrode over a substrate; implanting a nitrogen bearing species into a substrate region adjacent the gate electrode at a non-orthogonal angle relative to the substrate to form a nitrogen-rich region in the substrate region and under an edge portion of the gate electrode; and implanting a dopant into the substrate region adjacent the gate electrode to a depth no deeper than a depth of the nitrogen bearing species implant to form an active region adjacent the gate electrode and under the edge portion of the gate electrode, the nitrogen-rich region extending further under the edge portion of the gate electrode than the active region.
Claim 12
Dependent Claim
13 words
The method of claim 9, wherein the implanted dopant is an n-type dopant.
Claim 13
Dependent Claim
13 words
The method of claim 9, wherein the implanted dopant is a p-type dopant.
Claim 14
Dependent Claim
15 words
The method of claim 9, wherein the dopant is implanted after the nitrogen bearing species.
Claim 15
Dependent Claim
15 words
The method of claim 9, wherein the non-orthogonal angle is between 30 and 45 degrees.
Claim 16
Dependent Claim
22 words
The method of claim 9 wherein implanting the nitrogen bearing species includes implanting the nitrogen bearing species without masking the gate electrode.
Claim 17
Dependent Claim
27 words
The method of claim 9, wherein the nitrogen bearing species is implanted at a dose ranging from about 5E13 atoms/cm 2 to about 2E15 atoms/cm 2 .
Claim 18
Dependent Claim
25 words
The method of claim 15, wherein the nitrogen bearing species is implanted at an energy level ranging from about 10 KeV to about 60 KeV.
Claim 19
Dependent Claim
41 words
The method of claim 9, wherein implanting dopant to form the active region includes implanting a first dopant to form an LDD region and implanting a second dopant to form a source/drain region, the active region being an LDD source/drain region.
Claim 20
Independent Claim
125 words
A method of forming a semiconductor device, comprising: forming at least one gate electrode over a substrate; implanting a nitrogen bearing species into a substrate region adjacent the gate electrode to form a nitrogen-rich region in the substrate region and under an edge portion of the gate electrode; and implanting a dopant into the substrate region adjacent the gate electrode to form an active region adjacent the gate electrode and under the edge portion of the gate electrode, the nitrogen-rich region extending further under the edge portion of the gate electrode than the active region, wherein the nitrogen bearing species implant is performed at a non-orthogonal angle relative to the substrate and to a sufficient depth such that the nitrogen-rich region surrounds the active region.
Claim 21
Independent Claim
125 words
A method of forming a semiconductor device, comprising: forming at least one gate electrode over a substrate; implanting a nitrogen bearing species into a substrate region adjacent the gate electrode to form a nitrogen-rich region in the substrate region and under an edge portion of the gate electrode; and implanting a dopant into the substrate region adjacent the gate electrode to form an active region adjacent the gate electrode and under the edge portion of the gate electrode, the nitrogen-rich region extending further under the edge portion of the gate electrode than the active region, wherein the nitrogen bearing species implant is performed at a non-orthogonal angle relative to the substrate and to a sufficient depth such that the nitrogen-rich region surrounds the active region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-28 | 2003-08-30 | 2004-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-28 | 2007-08-30 | 2008-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-28 | 2011-08-30 | 2012-02-29 | $7700.00 | Window Closed / Lapsed |