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US6030541A
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US
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Process for defining a pattern using an anti-reflective coating and structure therefor
Assignee: International Business Machines Corp
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Filing: 1998-06-19
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Granted: 2000-02-29
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Expires: 2018-06-19
Abstract
Abstract A pattern in a surface is defined by providing on the surface a hard mask material; depositing an anti-reflective coating on the hard mask material; applying a photoresist layer on the anti-reflective coating; patterning the photoresist layer, anti-reflective layer and hard mask material; and removing the remaining portions of the photoresist layer and anti-reflective layer; and then patterning the substrate using the hard mask as the mask. Also provided is a structure for defining a pattern in a surface which comprises a surface having a hard mask material thereon; an anti-reflective coating located on the hard mask material; and a photoresist located on the anti-reflective coating. Also provided is an etchant composition for removing the hard mask material which comprises an aqueous composition of HF and chlorine.
Inventors
- 👤 James W. Adkisson
- 👤 Michael Caterer
- 👤 James T. Marsh
- 👤 Hung Ng
- 👤 James M. Oberschmidt
- 👤 Jed H. Rankin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:57
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10P50/00; H10P50/71
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
90 words
A process for defining a pattern in a surface which comprises: providing on said surface a layer of hard mask material; depositing an inorganic anti-reflective coating on said layer of hard mask material; applying a photoresist layer above said anti-reflective coating; patterning said photoresist layer; patterning said antireflective coating; patterning said layer of hard mask material; removing the remaining portions of said photoresist layer; removing the remaining portions of said anti-reflective layer by etching the remaining portions thereof; and then patterning said surface using the hard mask as a mask.
Claim 2
Dependent Claim
90 words
A process for defining a pattern in a surface which comprises: providing on said surface a layer of hard mask material; depositing an inorganic anti-reflective coating on said layer of hard mask material; applying a photoresist layer above said anti-reflective coating; patterning said photoresist layer; patterning said antireflective coating; patterning said layer of hard mask material; removing the remaining portions of said photoresist layer; removing the remaining portions of said anti-reflective layer by etching the remaining portions thereof; and then patterning said surface using the hard mask as a mask.
Claim 3
Dependent Claim
25 words
The process of claim 1 wherein said layer of hard mask material is provided by reacting tetraethylorthosilicate with oxygen or ozone to provide silicon dioxide.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein said layer of hard mask material is about 400 to about 1000 Å thick.
Claim 5
Dependent Claim
14 words
The process of claim 1 wherein said anti-reflective coating is a conformal inorganic coating.
Claim 6
Dependent Claim
15 words
The process of claim 1 wherein said anti-reflective coating is a conformably deposited silicon oxynitride.
Claim 7
Dependent Claim
15 words
The process of claim 5 wherein said silicon oxynitride is deposited by chemical vapor deposition.
Claim 8
Dependent Claim
22 words
The method of claim 6 wherein the top surface of said silicon oxynitride is oxidized, or a further oxide layer is deposited.
Claim 9
Dependent Claim
22 words
The process of claim 6 wherein the top surface of said silicon oxynitride is oxidized by a N 2 O plasma treatment.
Claim 10
Dependent Claim
19 words
The process of claim 6 wherein said anti-reflective coating has a thickness of about 100 to about 2000 Å.
Claim 11
Dependent Claim
14 words
The process of claim 1 wherein said photoresist layer is a chemically amplified photoresist.
Claim 12
Dependent Claim
17 words
The process of claim 10 wherein said photoresist layer is about 3000 to about 15000 Å thick.
Claim 13
Dependent Claim
30 words
The process of claim 1 wherein said anti-reflective coating is patterned by reactive ion etching or wet etching employing H 2 PO 4 aqueous etchant composition or downstream plasma etching.
Claim 14
Dependent Claim
36 words
The process of claim 5 wherein said hard mask material is silicon oxide from reacting tetraethylorthosilicate with oxygen or ozone and wherein said hard mask material is etched and removed employing an aqueous composition containing HF.
Claim 15
Dependent Claim
29 words
The process of claim 1 wherein said hard mask comprises a layer of silicon oxide from tetraethylorthosilicate reacted with ozone or oxygen and an upper layer of amorphous silicon.
Claim 16
Dependent Claim
17 words
The process of claim 14 wherein said amorphous silicon is about 100 to about 500 Å thick.
Claim 17
Dependent Claim
11 words
The process of claim 1 wherein said surface is polycrystalline silicon.
Claim 18
Dependent Claim
24 words
The process of claim 16 wherein a gate oxide is present beneath the polycrystalline silicon the locations where patterned followed by a semiconductor substrate.
Claim 19
Dependent Claim
12 words
The process of claim 1 wherein said semiconductor substrate includes non-planar topology.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-28 | 2003-08-30 | 2004-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-28 | 2007-08-30 | 2008-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-28 | 2011-08-30 | 2012-02-29 | $7700.00 | Window Closed / Lapsed |