Patent US6030460A successfully refreshed from Google Patents.
US6030460A
Expired / Lapsed
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Method and apparatus for forming dielectric films
Assignee: Bell Semiconductor LLC
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Filing: 1997-09-09
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Granted: 2000-02-29
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Expires: 2017-09-09
Abstract
Abstract Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compound and ozone molecules to a chemical vapor deposition reactor; (2) directing ultraviolet radiation into the chemical vapor deposition reactor to increase the rate at which oxygen atoms are formed from the ozone molecules present in the chemical vapor deposition reactor; and (3) decomposing the organometallic compound to form a deposition layer. The organometallic compound decomposes at an accelerated rate due in part to an increased amount of hydroxyl radicals present in the chemical vapor deposition reactor.
Inventors
- 👤 Valeriy K. Sukharev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/44; C23C16/4412; C23C16/48; C23C16/482; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6338
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
93 words
An apparatus for depositing a layer of material on a substrate, said layer of material being deposited from an organometallic compound which decomposes with the aid of hydroxyl radicals, said apparatus comprising: a chemical vapor deposition reactor having a support for said substrate, and at least one inlet port; a source of ozone gas coupled to said at least one inlet port; a source of said organometallic compound coupled to said at least one inlet port; and a source of ultraviolet radiation oriented to direct ultraviolet radiation into the chemical vapor deposition reactor.
Claim 2
Independent Claim
93 words
An apparatus for depositing a layer of material on a substrate, said layer of material being deposited from an organometallic compound which decomposes with the aid of hydroxyl radicals, said apparatus comprising: a chemical vapor deposition reactor having a support for said substrate, and at least one inlet port; a source of ozone gas coupled to said at least one inlet port; a source of said organometallic compound coupled to said at least one inlet port; and a source of ultraviolet radiation oriented to direct ultraviolet radiation into the chemical vapor deposition reactor.
Claim 3
Dependent Claim
39 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, further comprising a heater for heating said substrate, wherein said chemical vapor deposition reactor is an atmospheric pressure chemical vapor deposition reactor chamber.
Claim 4
Dependent Claim
33 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, wherein said source of ozone gas includes an ozone generator which generates ozone molecules from oxygen molecules.
Claim 5
Dependent Claim
27 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, wherein said source of ultraviolet radiation is a mercury arc lamp.
Claim 6
Dependent Claim
39 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, further comprising a window transparent to ultraviolet radiation and orientated to allow passage of said ultraviolet radiation into said chemical vapor deposition reactor.
Claim 7
Dependent Claim
36 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, wherein the organometallic compound is selected from the group consisting of TEOS, BPTEOS TEB, TMOP, OMCTS, HMDS, TMCTS, and TRIES.
Claim 8
Dependent Claim
51 words
The apparatus for depositing a layer of material on a substrate as recited in claim 6, wherein the TEOS is introduced into the chemical vapor deposition reactor under conditions sufficient to produce a concentration of between about 0.1 percent and 0.5 percent TEOS by volume in the chemical vapor deposition reactor.
Claim 9
Dependent Claim
49 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, wherein the ozone is introduced into the chemical vapor deposition reactor under conditions producing a concentration of between about 1 percent and 5 percent ozone by volume in the chemical vapor deposition reactor.
Claim 10
Dependent Claim
31 words
The apparatus for depositing a layer of material on a substrate as recited in claim 1, further including a source of gaseous nitrogen coupled to said at least one inlet port.
Claim 11
Independent Claim
90 words
A system for depositing a layer of material on a substrate, said layer of material being deposited from an organometallic compound which decomposes with the aid of hydroxyl radicals, said apparatus comprising: a reactor means having a support means for said substrate, and at least one inlet means; an ozone gas generating means coupled to said at least one inlet means; a source of said organometallic compound coupled to said at least one inlet means; and an ultraviolet radiation generating means oriented to direct ultraviolet radiation into the reactor means.
Claim 12
Independent Claim
90 words
A system for depositing a layer of material on a substrate, said layer of material being deposited from an organometallic compound which decomposes with the aid of hydroxyl radicals, said apparatus comprising: a reactor means having a support means for said substrate, and at least one inlet means; an ozone gas generating means coupled to said at least one inlet means; a source of said organometallic compound coupled to said at least one inlet means; and an ultraviolet radiation generating means oriented to direct ultraviolet radiation into the reactor means.
Claim 13
Dependent Claim
39 words
The apparatus for depositing a layer of material on a substrate as recited in claim 10, further comprising a heating means for heating said substrate and wherein said reactor means is an atmospheric pressure chemical vapor deposition reactor chamber.
Claim 14
Dependent Claim
28 words
The apparatus for depositing a layer of material on a substrate as recited in claim 10, wherein said ozone gas generating means generates ozone molecules from oxygen molecules.
Claim 15
Dependent Claim
27 words
The apparatus for depositing a layer of material on a substrate as recited in claim 10, wherein said ultraviolet radiation generating means is a mercury arc lamp.
Claim 16
Dependent Claim
39 words
The apparatus for depositing a layer of material on a substrate as recited in claim 10, further comprising a window transparent to ultraviolet radiation and orientated to allow passage of said ultraviolet radiation into said chemical vapor deposition reactor.
Claim 17
Dependent Claim
47 words
The apparatus for depositing a layer of material on a substrate as recited in claim 10, wherein the ozone is introduced into the reactor means under conditions sufficient to produce a concentration of between about 1 percent and 5 percent ozone by volume in the reactor means.
Claim 18
Dependent Claim
31 words
The apparatus for depositing a layer of material on a substrate as recited in claim 10, further including a gaseous nitrogen generating means coupled to said at least one inlet means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-28 | 2003-08-30 | 2004-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-28 | 2007-08-30 | 2008-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-28 | 2011-08-30 | 2012-02-29 | $7700.00 | Window Closed / Lapsed |