US6025613A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same
Assignee: NEC Corp
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Filing: 1998-02-12
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Granted: 2000-02-15
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Expires: 2018-02-12
Abstract
Abstract In a method of manufacturing a semiconductor device, the InP substrate is subjected to a NH 3 plasma processing by a plasma CVD apparatus into which NH 3 gas is introduced. The InP oxide film is deoxided and removed therefrom and an InN (nitride) film is then formed thereon. S i H 3 gas and NH 3 gas are introduced into the plasma CVD apparatus to form a SiNx spacer layer on the InN (nitride) film. A source electrode and drain electrode are formed as ohmic electrodes. A Pt layer is stacked on the InP channel region by evaporation lift-off or ion beam sputter method to form a gate electrode. Thereafter, by a process similar to that of forming the SiNx/InN spacer layer, a SiNx/InN passivation film is formed on all over the InP substrate including the source electrode, the drain electrode, and the gate electrode. Accordingly, a semiconductor device protected by the passivation film is completed.
Inventors
- 👤 Yasunori Bito
- 👤 Naotaka Iwata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/015
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
59 words
A field effect transistor which consists mainly of a semiconductor crystal having an InP layer and which includes source, drain and gate electrodes, said field effect transistor comprising: a SiNx spacer layer which separates said source, said drain and said gate electrodes from each other; and an InN film formed between said InP layer and said SiNx spacer layer.
Claim 2
Dependent Claim
59 words
A field effect transistor which consists mainly of a semiconductor crystal having an InP layer and which includes source, drain and gate electrodes, said field effect transistor comprising: a SiNx spacer layer which separates said source, said drain and said gate electrodes from each other; and an InN film formed between said InP layer and said SiNx spacer layer.
Claim 3
Dependent Claim
81 words
A field effect transistor which consists mainly of a semiconductor crystal and which includes source, drain and gate electrodes, said field effect transistor comprising: a primary layer having a primary composition of InP; a secondary layer which is formed on said primary layer and which is constituted by a layer structure selected from the group consisting of AlGaAs/AlInAs, GaAs/AlInAs, AlInP/AlInAs, AlGaP/AlInAs, and AlGaInP/AlInAs; and a SiNx spacer layer which separates said source, said drain and said gate electrodes from each other.
Claim 4
Dependent Claim
81 words
A field effect transistor which consists mainly of a semiconductor crystal and which includes source, drain and gate electrodes, said field effect transistor comprising: a primary layer having a primary composition of InP; a secondary layer which is formed on said primary layer and which is constituted by a layer structure selected from the group consisting of AlGaAs/AlInAs, GaAs/AlInAs, AlInP/AlInAs, AlGaP/AlInAs, and AlGaInP/AlInAs; and a SiNx spacer layer which separates said source, said drain and said gate electrodes from each other.
Claim 5
Dependent Claim
82 words
A field effect transistor which consists mainly of a semiconductor crystal and which includes source, drain and gate electrodes, said field effect transistor comprising: a primary layer having a primary composition of InP; and a secondary layer which is formed on said primary layer and which is constituted by a layer structure selected from the group consisting of AlGaAs/AlInAs/AlGaAs, GaAs/AlInAs/GaAs, AlInP/AlInAs/AlInP, AlGaP/AlInAs/AlGaP, and AlGaInP/AlInAs/AlGaInP; and a SiNx spacer layer which separates said source, said drain and said gate electrodes from each other.
Claim 6
Dependent Claim
82 words
A field effect transistor which consists mainly of a semiconductor crystal and which includes source, drain and gate electrodes, said field effect transistor comprising: a primary layer having a primary composition of InP; and a secondary layer which is formed on said primary layer and which is constituted by a layer structure selected from the group consisting of AlGaAs/AlInAs/AlGaAs, GaAs/AlInAs/GaAs, AlInP/AlInAs/AlInP, AlGaP/AlInAs/AlGaP, and AlGaInP/AlInAs/AlGaInP; and a SiNx spacer layer which separates said source, said drain and said gate electrodes from each other.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-02-14 | 2003-08-16 | 2004-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-14 | 2007-08-16 | 2008-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-14 | 2011-08-16 | 2012-02-15 | $7700.00 | Window Closed / Lapsed |