US6022781A
Expired / Lapsed
US
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Method for fabricating a MOSFET with raised STI isolation self-aligned to the gate stack
Assignee: International Business Machines Corp
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Filing: 1996-12-23
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Granted: 2000-02-08
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Expires: 2016-12-23
Abstract
Abstract A semiconductor structure comprising a transistor having a gate conductor that has first and second edges bounded by raised isolation structures (e.g. STI). A source diffusion is self-aligned to the third edge and a drain diffusion is self-aligned to the fourth edge of the gate electrode.
Inventors
- 👤 Wendell P. Noble, Jr.
- 👤 Ashwin K. Ghatalia
- 👤 Badih El-Kareh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:48
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D84/00
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
198 words
A method of forming an FET comprising the steps of: a) providing a semiconductor substrate; b) providing a gate stack on said substrate, said gate stack comprising a layer of gate dielectric and a layer of gate conductor on said gate dielectric, said gate stack having a top surface; c) removing a portion of said gate stack; d) etching at least one trench in said substrate exposed in said removing step (c); e) depositing insulator in said at least one trench and planarizing said insulator to said top surface to provide raised trench isolation, wherein a remaining portion of gate stack is surrounded by said raised trench isolation; f) removing portions on opposite sides of said remaining portion of gate stack to provide a segment gate, said segment gate having opposed first and second edges and opposed third and fourth edges, said trench insulator self-aligned to said first and second edges, said trench insulator spaced from said third and fourth edges for source and drain diffusions; and g) forming source and drain diffusions self-aligned to said third and fourth edges;and h) depositing a wiring level contacting said segment gate, wherein said wiring level comprises a permanent conductive spacer.
Claim 2
Independent Claim
198 words
A method of forming an FET comprising the steps of: a) providing a semiconductor substrate; b) providing a gate stack on said substrate, said gate stack comprising a layer of gate dielectric and a layer of gate conductor on said gate dielectric, said gate stack having a top surface; c) removing a portion of said gate stack; d) etching at least one trench in said substrate exposed in said removing step (c); e) depositing insulator in said at least one trench and planarizing said insulator to said top surface to provide raised trench isolation, wherein a remaining portion of gate stack is surrounded by said raised trench isolation; f) removing portions on opposite sides of said remaining portion of gate stack to provide a segment gate, said segment gate having opposed first and second edges and opposed third and fourth edges, said trench insulator self-aligned to said first and second edges, said trench insulator spaced from said third and fourth edges for source and drain diffusions; and g) forming source and drain diffusions self-aligned to said third and fourth edges;and h) depositing a wiring level contacting said segment gate, wherein said wiring level comprises a permanent conductive spacer.
Claim 3
Dependent Claim
15 words
A method as recited in claim 1 wherein said conductive spacer comprises a word line.
Claim 4
Independent Claim
171 words
A method of forming an isolation for an FET comprising the steps of: a) providing a semiconductor substrate; b) providing a gate stack on said substrate, said gate stack comprising a layer of gate dielectric and a layer of gate conductor on said gate dielectric, said gate stack having a top surface; c) removing a first portion of said gate stack; d) etching a first trench in said substrate exposed in said removing step (c), said first trench having a first depth; e) depositing conductor in said first trench, recess etching said conductor, depositing insulator in said recess, and planarizing said insulator to said top surface to provide a first raised trench isolation; f) removing a second portion of said gate stack; g) etching a second trench in said substrate exposed in said removing step (f), said second trench having a second depth different from said first depth; and h) depositing insulator in said second trench and planarizing said insulator to said top surface to provide a second raised trench isolation.
Claim 5
Independent Claim
171 words
A method of forming an isolation for an FET comprising the steps of: a) providing a semiconductor substrate; b) providing a gate stack on said substrate, said gate stack comprising a layer of gate dielectric and a layer of gate conductor on said gate dielectric, said gate stack having a top surface; c) removing a first portion of said gate stack; d) etching a first trench in said substrate exposed in said removing step (c), said first trench having a first depth; e) depositing conductor in said first trench, recess etching said conductor, depositing insulator in said recess, and planarizing said insulator to said top surface to provide a first raised trench isolation; f) removing a second portion of said gate stack; g) etching a second trench in said substrate exposed in said removing step (f), said second trench having a second depth different from said first depth; and h) depositing insulator in said second trench and planarizing said insulator to said top surface to provide a second raised trench isolation.
Claim 6
Dependent Claim
15 words
A method as recited in claim 3 wherein said first trench comprises a trench capacitor.
Claim 7
Dependent Claim
24 words
A method as recited in claim 3 wherein said depositing step (e) and said depositing step (h) are accomplished in a single deposition step.
Claim 8
Dependent Claim
94 words
A method as recited in claim 3 further comprising the steps of: i) removing portions on opposite sides of said remaining portion of gate stack to provide a segment gate, said segment gate having opposed first and second edges and opposed third and fourth edges, said trench insulator self-aligned to said first and second edges, said trench insulator spaced from said third and fourth edges for source and drain diffusions; and j) forming source and drain diffusions self-aligned to said third and fourth edges; and k) depositing a wiring level contacting said segment gate.
Claim 9
Dependent Claim
20 words
A method as recited in claim 6 wherein in said step (j) forming spacers adjacent said third and fourth edges.
Claim 10
Dependent Claim
29 words
A method as recited in claim 6 wherein said step (j) is accomplished by the step of forming a raised source/drain and diffusing from said raised source and drain.
Claim 11
Dependent Claim
27 words
A method as recited in claim 6 wherein in said depositing step (k) said wiring level is defined in a step separate from said removing step (i).
Claim 12
Dependent Claim
20 words
A method as recited in claim 6 wherein said depositing step (h) comprises the step of forming a conductive spacer.
Claim 13
Dependent Claim
29 words
A method as recited in claim 10 wherein said step (j) is accomplished by the step of forming a raised source/drain and diffusing from said raised source and drain.
Claim 14
Dependent Claim
15 words
A method as recited in claim 11 wherein said conductive spacer comprises a word line.
Claim 15
Dependent Claim
15 words
A method as recited in claim 10 wherein said conductive spacer comprises a word line.
Claim 16
Independent Claim
212 words
A method of forming an FET comprising the steps of: a) providing a semiconductor substrate; b) providing a gate stack on said substrate, said gate stack comprising a layer of gate dielectric and a layer of gate conductor on said gate dielectric, said gate stack having a top surface; c) removing a portion of said gate stack; d) etching a trench in said substrate exposed in said removing step (c); e) depositing insulator in said trench and planarizing said insulator to said top surface to provide raised trench isolation, wherein a remaining portion of gate stack is surrounded by said raised trench isolation to provide a segment gate; f) removing portions on opposite sides of said remaining portion of gate stack, said segment gate having opposed first and second edges and opposed third and fourth edges, said first and second edges adjacent said trench insulator, wherein removing portions provides spacing between said trench insulator and said third and fourth edges for source and drain diffusions; g) depositing a raised source and a raised drain and diffusing from said raised source and drain to provide diffusions self-aligned to said third and fourth edges without shorting said raised source or drain to said segment; gate and h) providing for contact to said segment gate.
Claim 17
Independent Claim
212 words
A method of forming an FET comprising the steps of: a) providing a semiconductor substrate; b) providing a gate stack on said substrate, said gate stack comprising a layer of gate dielectric and a layer of gate conductor on said gate dielectric, said gate stack having a top surface; c) removing a portion of said gate stack; d) etching a trench in said substrate exposed in said removing step (c); e) depositing insulator in said trench and planarizing said insulator to said top surface to provide raised trench isolation, wherein a remaining portion of gate stack is surrounded by said raised trench isolation to provide a segment gate; f) removing portions on opposite sides of said remaining portion of gate stack, said segment gate having opposed first and second edges and opposed third and fourth edges, said first and second edges adjacent said trench insulator, wherein removing portions provides spacing between said trench insulator and said third and fourth edges for source and drain diffusions; g) depositing a raised source and a raised drain and diffusing from said raised source and drain to provide diffusions self-aligned to said third and fourth edges without shorting said raised source or drain to said segment; gate and h) providing for contact to said segment gate.
Claim 18
Dependent Claim
46 words
A method as recited in claim 14 wherein said raised source/drain is formed by the steps of depositing amorphous or polycrystalline silicon, planarizing said silicon, and etching said silicon, said etching step leaving a portion of said silicon in said exposed portions of said source/drain regions.
Claim 19
Dependent Claim
15 words
A method as recited in claim 15 further comprising the step of doping said silicon.
Claim 20
Dependent Claim
15 words
A method as recited in claim 15 wherein said plananizing step is accomplished by polishing.
Claim 21
Dependent Claim
17 words
A method as recited in claim 15 wherein said planarizing step is accomplished by a planarizing etch.
Claim 22
Dependent Claim
26 words
A method as recited in claim 14 wherein said raised source/drain is formed by the step of forming selective silicon seeded from said source drain region.
Claim 23
Dependent Claim
18 words
A method as recited in claim 19 further comprising the step of siliciding said raised source and drain.
Claim 24
Dependent Claim
35 words
A method as recited in claim 14 further comprising the step (h) of depositing a wiring level contacting said segment gate and defining said wiring level in a step separate from said removing step (f).
Claim 25
Dependent Claim
20 words
A method as recited in claim 1 wherein said depositing step (h) comprises the step of forming a conductive spacer.
Claim 26
Dependent Claim
15 words
A method as recited in claim 22 wherein said conductive spacer comprises a word line.
Claim 27
Dependent Claim
22 words
A method as recited in claim 14 wherein in said step (g) further comprises forming spacers adjacent said third and fourth edges.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-02-07 | 2003-08-09 | 2004-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-02-07 | 2007-08-09 | 2008-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-02-07 | 2011-08-09 | 2012-02-08 | $7700.00 | Window Closed / Lapsed |