US5298450A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for simultaneously fabricating isolation structures for bipolar and CMOS circuits
Assignee: Texas Instruments Inc
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Filing: 1993-04-08
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Granted: 1994-03-29
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Expires: 2013-04-08
Abstract
Abstract An isolation structure for bipolar and CMOS circuits formed during the same processing steps to optimize the integration of bipolar and CMOS circuits. A deep trench (46) is formed in a semiconductor circuit for providing deep isolation for bipolar circuits. A shallow recess (56) is then formed, which also forms a stepped sidewall structure of the deep trench. The recess (56) and the trench (46) are covered by an insulating oxide (60), and thereafter filled with an undoped polysilicon (62) to form the different isolating structures for the different types of circuits.
Inventors
- 👤 Douglas P. Verret
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:26
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
124 words
A method for fabricating an isolating structure for MOS and bipolar circuits, comprising the steps of: forming a shallow recess in a semiconductor substrate; forming a deep trench in the semiconductor substrate, said deep trench having a surface area substantially the same as a surface area of said shallow recess, said deep trench having a stepped sidewall so that an upper portion of said trench has a width greater than a lower portion of said trench, wherein said lower trench portion is formed, and wherein said upper portion of said trench is formed simultaneously with said shallow recess; forming a thin insulation on the surface of said recess and said deep trench; and filling said recess and said deep trench with a polysilicon material.
Claim 2
Independent Claim
124 words
A method for fabricating an isolating structure for MOS and bipolar circuits, comprising the steps of: forming a shallow recess in a semiconductor substrate; forming a deep trench in the semiconductor substrate, said deep trench having a surface area substantially the same as a surface area of said shallow recess, said deep trench having a stepped sidewall so that an upper portion of said trench has a width greater than a lower portion of said trench, wherein said lower trench portion is formed, and wherein said upper portion of said trench is formed simultaneously with said shallow recess; forming a thin insulation on the surface of said recess and said deep trench; and filling said recess and said deep trench with a polysilicon material.
Claim 3
Dependent Claim
24 words
The method of claim 1, further including forming said deep trench about eight microns deep and forming said recess about a 0.8 micron deep.
Claim 4
Dependent Claim
28 words
The method of claim 1, further including forming a pair of bipolar transistors isolated by said deep trench, and forming a CMOS transistor pair isolated by said recess.
Claim 5
Dependent Claim
33 words
The method of claim 1, further including forming a conductor overlying an elongated portion of one of said recess or said deep trench for reducing a capacitance between said conductor and said substrate.
Claim 6
Dependent Claim
16 words
The method of claim 1, further including forming the thin insulation by oxidizing the semiconductor substrate.
Claim 7
Dependent Claim
20 words
The method of claim 1, further including forming a PMOS transistor isolated by said isolating structure from an NMOS transistor.
Claim 8
Dependent Claim
24 words
The method of claim 1, further including forming said recess with essentially vertical sidewalls so as to reduce lateral extensions of said isolating structure.
Claim 9
Dependent Claim
15 words
The method of claim 7, further including forming said recess by utilizing an anisotropic etch.
Claim 10
Independent Claim
162 words
A method for fabricating an isolating structure for MOS and bipolar circuits, comprising the steps of: forming a layer of silicon oxide on a semiconductor substrate; forming a layer of non-oxidizing dielectric material over said silicon oxide and patterning said dielectric material to define a shallow recess location and a deep trench location in said substrate; masking said substrate with a material to form openings in alignment with said trench location; etching said substrate to remove said silicon oxide at said trench location and said semiconductor substrate material to form said deep trench; removing said masking material and etching said substrate through said dielectric opening to form said recess and to extend a depth of said trench, wherein said recess is etched with a different lateral dimension than that of a lower portion of said deep trench; oxidizing the trench surfaces ad the recess surfaces to form an oxide insulation; and filling said deep trench and said recess with a nonconductive material.
Claim 11
Independent Claim
162 words
A method for fabricating an isolating structure for MOS and bipolar circuits, comprising the steps of: forming a layer of silicon oxide on a semiconductor substrate; forming a layer of non-oxidizing dielectric material over said silicon oxide and patterning said dielectric material to define a shallow recess location and a deep trench location in said substrate; masking said substrate with a material to form openings in alignment with said trench location; etching said substrate to remove said silicon oxide at said trench location and said semiconductor substrate material to form said deep trench; removing said masking material and etching said substrate through said dielectric opening to form said recess and to extend a depth of said trench, wherein said recess is etched with a different lateral dimension than that of a lower portion of said deep trench; oxidizing the trench surfaces ad the recess surfaces to form an oxide insulation; and filling said deep trench and said recess with a nonconductive material.
Claim 12
Dependent Claim
34 words
The method of claim 9, further including forming said deep trench with a stepped sidewall so that an upper portion of said trench has a width greater than a lower portion of said trench.
Claim 13
Dependent Claim
28 words
The method of claim 9, further including simultaneously oxidizing said recess and said deep trench, and simultaneously filling said recess and said deep trench with a polysilicon material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-28 | 1997-09-27 | 1998-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-28 | 2001-09-27 | 2002-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-28 | 2005-09-27 | 2006-03-29 | $7700.00 | Window Closed / Lapsed |