US6020239A
Expired / Lapsed
US
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Pillar transistor incorporating a body contact
Assignee: International Business Machines Corp
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Filing: 1998-01-28
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Granted: 2000-02-01
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Expires: 2018-01-28
Abstract
Abstract According to the present invention, a method for fabricating vertical circuit devices which include a body contact is disclosed. During the fabrication process, the body of a transistor is formed from a pillar of single crystal silicon. The silicon pillar is formed over a butted junction of N+ and P+ diffusions. This fabrication process results in a pillar structure which has an n+ diffusion contacting a portion of the base of the transistor body and a P+ diffusion contacting the remainder of the base of the transistor body. The proportion of N+ and P+ area at the base of the silicon pillar depends on the overlay of the opening to the butted junction. Gate oxide is grown over the entire pillar and a polysilicon gate material is then deposited and etched to form the transistor gate. Metal contact studs are formed, preferably via deposition. After fabrication, the entire surface of the device can be planarized by using any standard Chemical Mechanical Planarization (CMP) process.
Inventors
- 👤 Jeffrey Peter Gambino
- 👤 Jack Allan Mandelman
- 👤 Stephen Anthony Parke
- 👤 Matthew Robert Wordeman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/025; H10D30/60; H10D30/63; H10D30/67; H10D30/6728
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
102 words
A method of fabricating a semiconductor device, the method comprising the steps of: forming a P+ region and an N+ region in a substrate wherein the P+ region and the N+ region meet at a butted junction; forming a silicon pillar straddling the butted junction, the silicon pillar also having a bottom portion, a top portion and a side; doping the top portion of the silicon pillar; forming an insulating layer on the side of the silicon pillar; and forming a gate over the insulating layer on the side of the silicon pillar extending from the top portion to the bottom portion.
Claim 2
Independent Claim
102 words
A method of fabricating a semiconductor device, the method comprising the steps of: forming a P+ region and an N+ region in a substrate wherein the P+ region and the N+ region meet at a butted junction; forming a silicon pillar straddling the butted junction, the silicon pillar also having a bottom portion, a top portion and a side; doping the top portion of the silicon pillar; forming an insulating layer on the side of the silicon pillar; and forming a gate over the insulating layer on the side of the silicon pillar extending from the top portion to the bottom portion.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the step of forming a silicon pillar comprises the step of growing a single crystal epitaxial silicon pillar.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein the semiconductor device is a MOSFET.
Claim 5
Dependent Claim
20 words
The method of claim 1 further comprising the step of forming a source contact stud connected to the N+ region.
Claim 6
Dependent Claim
20 words
The method of claim 1 further comprising the step of forming a body contact stud connected to the P+ region.
Claim 7
Dependent Claim
27 words
The method of claim 1 wherein the step of forming the gate comprises the steps of: conformally depositing a conductive material; and directionally etching the conductive material.
Claim 8
Dependent Claim
23 words
The method of claim 1 further comprising the step of forming a drain contact stud connected to the top of the silicon pillar.
Claim 9
Dependent Claim
19 words
The method of claim 7 further comprising the step of forming a nitride spacer adjacent the drain contact stud.
Claim 10
Independent Claim
249 words
A method of fabricating a MOSFET, the method comprising the steps of: forming a P+ region and an N+ region in a substrate wherein the P+ region and the N+ region are in contact at a butted junction, and wherein the N+ region forms a first source/drain diffusion and the P+ region forms a body contact; forming a layer of oxide over the P+ region and the N+ region; forming a layer of nitride over the layer of oxide; depositing and etching a layer of photoresist over the layer of nitride; forming STI regions, the STI regions defining edges for the P+ region and the N+ region; forming a single crystal silicon pillar over and straddling the P+ region and the N+ region, the single crystal silicon pillar also having a top portion, a bottom portion, and a side; planarizing the top portion of the single crystal silicon pillar; doping the top portion of the single crystal silicon to forms a second source/drain diffusion; forming an insulating layer over the side of the single crystal silicon pillar; and forming a gate over the insulating layer on the sides of the single crystal silicon pillar extending from the top portion to the bottom portion forming an oxide layer over the silicon pillar; planarizing the oxide layer; patterning the oxide layer to form vias; forming a metal layer over the oxide layer, thereby filling the vias with a metal to form a plurality of contact studs; and planarizing the metal layer.
Claim 11
Independent Claim
249 words
A method of fabricating a MOSFET, the method comprising the steps of: forming a P+ region and an N+ region in a substrate wherein the P+ region and the N+ region are in contact at a butted junction, and wherein the N+ region forms a first source/drain diffusion and the P+ region forms a body contact; forming a layer of oxide over the P+ region and the N+ region; forming a layer of nitride over the layer of oxide; depositing and etching a layer of photoresist over the layer of nitride; forming STI regions, the STI regions defining edges for the P+ region and the N+ region; forming a single crystal silicon pillar over and straddling the P+ region and the N+ region, the single crystal silicon pillar also having a top portion, a bottom portion, and a side; planarizing the top portion of the single crystal silicon pillar; doping the top portion of the single crystal silicon to forms a second source/drain diffusion; forming an insulating layer over the side of the single crystal silicon pillar; and forming a gate over the insulating layer on the sides of the single crystal silicon pillar extending from the top portion to the bottom portion forming an oxide layer over the silicon pillar; planarizing the oxide layer; patterning the oxide layer to form vias; forming a metal layer over the oxide layer, thereby filling the vias with a metal to form a plurality of contact studs; and planarizing the metal layer.
Claim 12
Independent Claim
103 words
A method of forming a self-aligned opening in an oxide layer the method comprising the steps of: forming a P+ diffusion region and an N+ diffusion region in a substrate, the P+ diffusion region and the N+ diffusion region sharing a common butted junction; forming a layer of oxide over the P+ region and the N+ region; forming a layer of nitride over the layer of oxide; depositing and etching a layer of photoresist over the layer of nitride; and patterning the nitride layer to form active areas; etching a hole in the nitride with a nitride etch selective to oxide and photoresist.
Claim 13
Independent Claim
103 words
A method of forming a self-aligned opening in an oxide layer the method comprising the steps of: forming a P+ diffusion region and an N+ diffusion region in a substrate, the P+ diffusion region and the N+ diffusion region sharing a common butted junction; forming a layer of oxide over the P+ region and the N+ region; forming a layer of nitride over the layer of oxide; depositing and etching a layer of photoresist over the layer of nitride; and patterning the nitride layer to form active areas; etching a hole in the nitride with a nitride etch selective to oxide and photoresist.
Claim 14
Independent Claim
125 words
A method of self-aligning a vertical device to an underlying active silicon region without overlapping an adjacent isolation region, the method comprising the steps of: forming a P+ diffusion region and an N+ diffusion region in a substrate, the P+ diffusion region and the N+ diffusion region sharing a common butted junction; forming a layer of oxide over the P+ region and the N+ region; forming a layer of nitride over the layer of oxide; depositing and etching a layer of photoresist over the layer of nitride; patterning the nitride layer to form active areas; etching a hole in the nitride with a nitride etch selective to oxide an photoresist; and forming a silicon pillar straddling the P+ diffusion region and an N+ diffusion region.
Claim 15
Independent Claim
125 words
A method of self-aligning a vertical device to an underlying active silicon region without overlapping an adjacent isolation region, the method comprising the steps of: forming a P+ diffusion region and an N+ diffusion region in a substrate, the P+ diffusion region and the N+ diffusion region sharing a common butted junction; forming a layer of oxide over the P+ region and the N+ region; forming a layer of nitride over the layer of oxide; depositing and etching a layer of photoresist over the layer of nitride; patterning the nitride layer to form active areas; etching a hole in the nitride with a nitride etch selective to oxide an photoresist; and forming a silicon pillar straddling the P+ diffusion region and an N+ diffusion region.
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