US5155054A
Expired / Lapsed
US
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Method of manufacturing a semiconductor MOSFET having a projection T-shaped semiconductor portion
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1991-10-15
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Granted: 1992-10-13
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Expires: 2011-10-15
Abstract
Abstract A MOSFET having a projecting T-shaped semiconductor portion and a method of manufacturing the same. The MOSFET includes a semiconductor body having a first diffusion region of a first conductivity type, a T-shaped semiconductor portion projecting from the semiconductor body, a gate insulator film formed on a surface of said T-shaped portion, and a gate electrode formed on the gate insulator film. The top of the T provides a means by which contact can easily be made between a highly concentrated impurity region on the projecting portion and an electrode, even if the cross-sectional area of the base of the T is narrow. In a method of manufacturing the MOSFET a mask layer is placed on the semiconductor body with a hole which exposes the semiconductor body, a layer of semiconductor material is provided in the hole and on a portion of the mask layer around the hole so as to form the T-shaped portion, the mask layer is removed by the wet etching, a gate insulating layer is formed onside surfaces of the T-shaped portion, a gate electrode layer is formed on the gate insulating layer, and an impurity is introduced into the top of the T-shaped portion and a predetermined region of the semiconductor body located adjacent to the T-shaped portion.
Inventors
- 👤 Masahiro Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:59
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6728; H10D30/01; H10D30/021; H10D30/025; H10D30/202; H10D30/63; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
172 words
A method of manufacturing a MOSFET having a projecting semiconductor portion, comprising the steps of: (a) providing a semiconductor body; (b) forming a mask layer on the semiconductor body, the mask layer having a hole which exposes the semiconductor body; (c) forming a semiconductor layer with a base portion in the hole extending from the semiconductor body and with a t op portion on the mask layer around the hole, a cross section of the semiconductor layer having the shape of a T with a base along the base portion and a top along the top portion; (d) removing the mask layer by wet etching to expose the surface of the base portion of the semiconductor layer; (e) forming a gate insulating layer on the exposed surface of the base portion of the semiconductor layer; (f) forming a gate electrode layer on the gate insulating layer; and (g) introducing impurities into the top portion of the semiconductor layer and a predetermined region of the semiconductor body located adjacent to said semiconductor layer.
Claim 2
Independent Claim
172 words
A method of manufacturing a MOSFET having a projecting semiconductor portion, comprising the steps of: (a) providing a semiconductor body; (b) forming a mask layer on the semiconductor body, the mask layer having a hole which exposes the semiconductor body; (c) forming a semiconductor layer with a base portion in the hole extending from the semiconductor body and with a t op portion on the mask layer around the hole, a cross section of the semiconductor layer having the shape of a T with a base along the base portion and a top along the top portion; (d) removing the mask layer by wet etching to expose the surface of the base portion of the semiconductor layer; (e) forming a gate insulating layer on the exposed surface of the base portion of the semiconductor layer; (f) forming a gate electrode layer on the gate insulating layer; and (g) introducing impurities into the top portion of the semiconductor layer and a predetermined region of the semiconductor body located adjacent to said semiconductor layer.
Claim 3
Dependent Claim
19 words
A method of manufacturing a MOSFET according to claim 1, wherein the semiconductor body is a polycrystalline silicon body.
Claim 4
Dependent Claim
58 words
A method of manufacturing a MOSFET according to claim 2, wherein said step of providing the semiconductor body comprises the steps of: preparing a silicon substrate, forming an oxide layer on the silicon substrate, forming a nitride layer on the oxide layer, and forming a polycrystalline silicon layer, which constitutes said polycrystalline silicon body, on the nitride layer.
Claim 5
Dependent Claim
66 words
A method of manufacturing a MOSFET according to claim 2, wherein said step of forming a semiconductor layer comprises the steps of: depositing polycrystalline silicon in the hole and on the mask layer, and removing portions of the polycrystalline silicon on the mask layer so as to retain only the polycrystalline silicon in the hole and on a portion of the mask layer around the hole.
Claim 6
Dependent Claim
19 words
A method of manufacturing a MOSFET according to claim 1, wherein the semiconductor body is a monocrystalline silicon body.
Claim 7
Dependent Claim
60 words
A method of manufacturing a MOSFET according to claim 5, wherein said step of providing the semiconductor body comprises the steps of: providing a monocrystalline silicone substrate, forming a field oxide layer on the monocrystalline silicon substrate, forming a nitride layer on the field oxide layer and the monocrystalline silicon substrate, removing the nitride layer formed on the silicon substrate.
Claim 8
Dependent Claim
57 words
A method of manufacturing a MOSFET according to claim 5, wherein said step of forming a semiconductor layer comprises the steps of: growing silicon from an exposed surface of the exposed semiconductor body in the hole to fill the hole with silicon and to cover a surface portion of the mask layer around the hole with silicon.
Claim 9
Dependent Claim
19 words
A method of manufacturing a MOSFET according to claim 7, wherein said step of growing silicon is performed epitaxially.
Claim 10
Dependent Claim
67 words
A method of manufacturing a MOSFET according to claim 5, wherein said step of forming a semiconductor layer comprises the steps of: depositing amorphous silicon in the hole and on the mask layer, monocrystallizing the deposited amorphous silicon, and removing some portions of the monocrystallized silicon so as to retain only portions of the monocrystallized silicon in the hole and on the oxide layer around the hole.
Claim 11
Dependent Claim
24 words
A method of manufacturing a MOSFET according to claim 9, wherein said step of monocrystallizing is performed by a solid phase epitaxial growth method.
Claim 12
Dependent Claim
18 words
A method of manufacturing a MOSFET according to claim 1, wherein said mask layer is an oxide layer.
Claim 13
Dependent Claim
19 words
A method of manufacturing a MOSFET according to claim 1, wherein said gate electrode layer has a cylindrical shape.
Claim 14
Dependent Claim
66 words
A method of manufacturing a MOSFET according to claim 1, wherein said step of forming a semiconductor layer comprises the steps of: depositing polycrystalline silicon in the hole and on the mask layer, and removing portions of the polycrystalline silicon on the mask layer so as to retain only the polycrystalline silicon in the hole and on a portion of the mask layer around the hole.
Claim 15
Independent Claim
218 words
A method of manufacturing a MOSFET having a projecting semiconductor portion comprising the steps of: providing a semiconductor body; forming a mask layer on the semiconductor body with the mask layer having a hole which exposes a surface of the semiconductor body and which is defined by an interior surface of the mask layer; forming a semiconductor layer having a first portion which is disposed in the hole, is connected to the semiconductor body and has a peripheral surface contacting said interior surface of the mask layer, and a second portion disposed on the first portion and extending laterally on the outer surface of the mask layer around the hole so that a cross section of the semiconductor layer has a T-shape with a base along the first portion and a top along the second portion; removing the mask layer by wet etching to expose the peripheral surface of the first portion of the semiconductor layer; forming a gate insulating layer on the peripheral surface of the first portion of the semiconductor layer; forming a gate electrode layer on the gate insulating layer; and introducing impurities into the second portion of the semiconductor layer and into a predetermined region of the semiconductor body disposed adjacent the first portion of the semiconductor layer to form source and drain regions.
Claim 16
Independent Claim
218 words
A method of manufacturing a MOSFET having a projecting semiconductor portion comprising the steps of: providing a semiconductor body; forming a mask layer on the semiconductor body with the mask layer having a hole which exposes a surface of the semiconductor body and which is defined by an interior surface of the mask layer; forming a semiconductor layer having a first portion which is disposed in the hole, is connected to the semiconductor body and has a peripheral surface contacting said interior surface of the mask layer, and a second portion disposed on the first portion and extending laterally on the outer surface of the mask layer around the hole so that a cross section of the semiconductor layer has a T-shape with a base along the first portion and a top along the second portion; removing the mask layer by wet etching to expose the peripheral surface of the first portion of the semiconductor layer; forming a gate insulating layer on the peripheral surface of the first portion of the semiconductor layer; forming a gate electrode layer on the gate insulating layer; and introducing impurities into the second portion of the semiconductor layer and into a predetermined region of the semiconductor body disposed adjacent the first portion of the semiconductor layer to form source and drain regions.
Claim 17
Dependent Claim
78 words
A method of manufacturing a MOSFET as defined in claim 14 wherein: said hole is cylindrical; the step of removing the mask layer includes removing the mask layer to expose the entire peripheral surface of the first portion of the semiconductor layer; and the steps of forming a gate insulating layer and a gate electrode layer include forming the respective layers completely around the first portion of the semiconductor layer, whereby the gate electrode has a cylindrical shape.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-13 | 1996-04-13 | 1996-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-13 | 2000-04-13 | 2000-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-13 | 2004-04-13 | 2004-10-13 | $7700.00 | Window Closed / Lapsed |