Vertical gate transistor with low temperature epitaxial channel

Claim 2

A vertical gate, field effect transistor formed on a silicon-on-oxide substrate, said substrate comprised of an oxide base and a silicon layer formed on said oxide base, said vertical gate, field effect transistor comprising in combination: a source region formed in said silicon layer with an opening formed therein defining a source region edge; a first oxide layer formed on said source region; a channel substrate layer formed by a low temperature epitaxial process overlying said first oxide layer on said source region with an opening formed therein defining a channel substrate layer edge that is aligned with said source region edge with said first oxide layer separating a portion of said source region from said channel substrate layer; a second oxide layer formed on said channel substrate layer; a drain layer overlying said second oxide layer with an opening formed therein defining a drain layer edge that is aligned with said source region edge and said channel substrate layer edge with said second oxide layer separating a portion of said channel substrate layer from said drain layer; a gate dielectric layer formed over said source region edge, said channel substrate layer edge, and said drain layer edge; and a conductive gate structure in contact with said gate dielectric layer and extending perpendicularly with respect to said source region, said channel substrate layer, and said drain layer.

Claim 3

A vertical gate, field effect transistor on a silicon-on-oxide substrate as in claim 1, wherein said gate dielectric layer is an oxide layer.

Claim 4

A vertical gate, field effect transistor on a silicon-on-oxide substrate as in claim 1, comprising in combination: an ion implanted region in said channel substrate layer and a substrate contact connected to said channel substrate layer ion implanted region; an ion implanted region in said source region and a source contact connected to said source region ion implanted region; an ion implanted region in said drain layer and a drain contact connected to said drain layer on implanted region.

Claim 5

A pair of vertical gate, field effect transistors formed on a silicon-on-oxide substrate, said substrate comprised of an oxide base and a silicon layer formed on said oxide base, said pair of vertical gate, field effect transistors comprising in combination: a source region formed in said silicon layer; a first oxide layer formed on said source region; a channel substrate layer formed by a low temperature epitaxial process overlying said first oxide layer on said source region with said first oxide layer separating a portion of said source region from said channel substrate layer; a second oxide layer formed on said channel substrate layer; a drain layer overlying said second oxide layer with said second oxide layer separating a portion of said channel substrate layer from said drain layer; a vertical opening formed in said source region, said first oxide layer, said channel substrate layer, said second oxide layer, and said drain layer, said opening separating said source region, said first oxide layer, said channel substrate layer, said second oxide layer, and said drain layer into two electrically isolated structures with an edge of each of the source regions, the channel substrate layers, and the drain layers aligned along opposing walls of said opening; a gate dielectric layer formed on said opposing walls of said opening; a vertical conductive gate structure in said opening in contact with said gate dielectric layer, and gate structure being common to said two electrically isolated structures.

Claim 6

A pair of vertical gate, field effect transistors formed on a silicon-on-oxide substrate, said substrate comprised of an oxide base and a silicon layer formed on said oxide base, said pair of vertical gate, field effect transistors comprising in combination: a source region formed in said silicon layer; a first oxide layer formed on said source region; a channel substrate layer formed by a low temperature epitaxial process overlying said first oxide layer on said source region with said first oxide layer separating a portion of said source region from said channel substrate layer; a second oxide layer formed on said channel substrate layer; a drain layer overlying said second oxide layer with said second oxide layer separating a portion of said channel substrate layer from said drain layer; a vertical opening formed in said source region, said first oxide layer, said channel substrate layer, said second oxide layer, and said drain layer, said opening separating said source region, said first oxide layer, said channel substrate layer, said second oxide layer, and said drain layer into two electrically isolated structures with an edge of each of the source regions, the channel substrate layers, and the drain layers aligned along opposing walls of said opening; a gate dielectric layer formed on said opposing walls of said opening; a vertical conductive gate structure in said opening in contact with said gate dielectric layer, and gate structure being common to said two electrically isolated structures.

Claim 7

A pair of vertical gate, field effect transistors with a common vertical gate on a silicon-on-oxide substrate as in claim 4H, wherein said gate dielectric layer is an oxide layer.

Claim 8

A pair of vertical gate, field effect transistors with a common vertical gate on a silicon-on-oxide substrate as in claim 4H, further comprising: an ion implanted region in said channel substrate layer and a substrate contact connected to said channel substrate layer in each of said two electrically isolated structures; an ion implanted region in said source region and a source contact connected to said source region ion implanted region in each of said two electrically isolated structures; an ion implanted region in said drain layer and a drain contact connected to said drain layer ion implanted region in each of said two electrically isolated structures.