Patent US6008110A successfully refreshed from Google Patents.
US6008110A
Expired / Lapsed
US
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Semiconductor substrate and method of manufacturing same
Assignee: Toshiba Corp
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Filing: 1997-02-11
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Granted: 1999-12-28
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Expires: 2017-02-11
Abstract
Abstract A semiconductor substrate has a support substrate formed of monocrystal silicon, an oxide film formed on the support substrate and a thin film of monocrystal silicon formed on the oxide film. The support substrate is a high-concentration P-type substrate to which boron is so doped that a resistivity of the support base is 0.1 Ω.cm or less. In manufacturing: boron is into the support base so that a resistivity of the support base is 0.1 Ω.cm or less; a silicon substrate on which the thin film of monocrystal silicon is formed is heated at 1100° C. or higher for 30 min or longer within a reducing atmosphere; the heat treated silicon substrate is attached to the high-concentration P-type support substrate via the oxide film formed on a surface of any one of the support substrate and the P-type silicon substrate and the attached substrates are heated at 950° C. or higher for 10 min or longer to bond the attached substrates together; and the bonded silicon substrate is thinned.
Inventors
- 👤 Shuichi Samata
- 👤 Yoshiaki Matsushita
- 👤 Yoko Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:18
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P36/00; H10P36/03; H10P36/07; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
175 words
A method of manufacturing a semiconductor substrate having a support substrate formed of boron-doped high-concentration P-type monocrystal silicon, an oxide film formed on the support substrate, and a thin film of monocrystal silicon formed on the oxide film, comprising: doping boron into the support base so that a resistivity of the support base is 0.1 Ω.cm or less; heat treating a silicon substrate on which the thin film of monocrystal silicon is formed at 1100° C. or higher for 30 min or longer within a reducing atmosphere; attaching the heat treated silicon substrate to the high-concentration P-type support substrate via the oxide film formed on a surface of any one of the support substrate and the P-type silicon substrate and heat treating the attached substrates at 950° C. or higher for 10 min or longer to bond the attached substrates together; and thinning the bonded silicon substrate, wherein said reducing atmosphere comprises at least one member selected from the group consisting of H 2 , CO, CO 2 , Ar, He, Ne, Kr and Xe.
Claim 2
Independent Claim
175 words
A method of manufacturing a semiconductor substrate having a support substrate formed of boron-doped high-concentration P-type monocrystal silicon, an oxide film formed on the support substrate, and a thin film of monocrystal silicon formed on the oxide film, comprising: doping boron into the support base so that a resistivity of the support base is 0.1 Ω.cm or less; heat treating a silicon substrate on which the thin film of monocrystal silicon is formed at 1100° C. or higher for 30 min or longer within a reducing atmosphere; attaching the heat treated silicon substrate to the high-concentration P-type support substrate via the oxide film formed on a surface of any one of the support substrate and the P-type silicon substrate and heat treating the attached substrates at 950° C. or higher for 10 min or longer to bond the attached substrates together; and thinning the bonded silicon substrate, wherein said reducing atmosphere comprises at least one member selected from the group consisting of H 2 , CO, CO 2 , Ar, He, Ne, Kr and Xe.
Claim 3
Dependent Claim
41 words
The method of manufacturing a semiconductor substrate of claim 1, which further comprises the step of forming the oxide film with a thickness from 10 nm or more to 5 μm or less on the support substrate or the silicon substrate.
Claim 4
Dependent Claim
37 words
The method of manufacturing a semiconductor substrate of claim 1, wherein said heat treating of the silicon substrate is carried out so that the thin film has an oxygen concentration of 5×10 17 cm -3 or less.
Claim 5
Dependent Claim
18 words
The method of claim 1, wherein said oxide film has a thickness of 50 nm to 1 μm.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein said reducing atmosphere comprises H 2 .
Claim 7
Dependent Claim
23 words
The method of claim 1, wherein said heat treating of the attached substrates is carried out in an atmosphere comprising N 2 .
Claim 8
Dependent Claim
17 words
The method of claim 1, wherein said silicon thin film has a thickness of 10 nm-10 μm.
Claim 9
Dependent Claim
15 words
The method of claim 1, wherein said thin film has a resistivity of 0.1-100 Ωcm.
Claim 10
Independent Claim
115 words
A method for manufacturing a semiconductor substrate, comprising: heat treating a silicon substrate at 1100° C. or higher for 30 minutes or longer in a reducing atmosphere; attaching said heat treated silicon substrate to a boron doped silicon support base having a resistivity of 0.1 Ωcm or less, via an oxide film on a surface of said support base or said silicon substrate, and heat treating the attached support silicon substrate at 950° C. or higher for ten minutes or longer; and thinning the attached silicon substrate, wherein said reducing atmosphere comprises at least one member selected from the group consisting of H 2 , CO, CO 2 , Ar, He, Ne, Kr and Xe.
Claim 11
Independent Claim
115 words
A method for manufacturing a semiconductor substrate, comprising: heat treating a silicon substrate at 1100° C. or higher for 30 minutes or longer in a reducing atmosphere; attaching said heat treated silicon substrate to a boron doped silicon support base having a resistivity of 0.1 Ωcm or less, via an oxide film on a surface of said support base or said silicon substrate, and heat treating the attached support silicon substrate at 950° C. or higher for ten minutes or longer; and thinning the attached silicon substrate, wherein said reducing atmosphere comprises at least one member selected from the group consisting of H 2 , CO, CO 2 , Ar, He, Ne, Kr and Xe.
Claim 12
Dependent Claim
31 words
The method of claim 9, further comprising the step of forming said oxide film having a thickness of 50 nm to 1 μm on said support base or said silicon substrate.
Claim 13
Dependent Claim
22 words
The method of claim 9, wherein said thinned attached silicon substrate has an oxygen concentration of 5×10 17 cm -3 or less.
Claim 14
Dependent Claim
18 words
The method of claim 9, wherein said oxide film has a thickness of 50 nm to 1 μm.
Claim 15
Dependent Claim
13 words
The method of claim 9, wherein said reducing atmosphere comprises H 2 .
Claim 16
Dependent Claim
26 words
The method of claim 9, wherein said heat treating of said attached support and silicon substrate is carried out in an atmosphere comprising N 2 .
Claim 17
Dependent Claim
25 words
The method of claim 9, wherein said thinning is carried out until the attached silicon substrate has a thickness of 10 nm to 10 μm.
Claim 18
Dependent Claim
17 words
The method of claim 9, wherein said thinned attached silicon substrate has a resistivity of 0.1-100 Ωcm.
Claim 19
Dependent Claim
38 words
The method of claim 9, wherein said semiconductor substrate produced by said method comprises a support base of boron-doped monocrystalline silicon, an oxide film on said support base, and a film of monocrystalline silicon on said oxide film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |