US6008101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser processing method of semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-11-12
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Granted: 1999-12-28
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Expires: 2017-11-12
Abstract
Abstract It is intended to provide a technique of separately forming thin-film transistors disposed in a peripheral circuit area and those disposed in a pixel area in accordance with characteristics required therefor in a manufacturing process of semiconductor devices to constitute a liquid crystal display device. In an annealing step by laser light illumination, laser light is selectively applied to a semiconductor thin-film by partially masking it. For example, to illuminate the peripheral circuit area and the pixel area with laser light under different conditions in manufacture of an active matrix liquid crystal display device, laser light is applied at necessary illumination energy densities by using a mask. In this manner, a crystalline silicon film having a necessary degree of crystallinity in a selective manner can be obtained.
Inventors
- 👤 Koichiro Tanaka
- 👤 Naoaki Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; G; G03; G03F; G03F7/00; G03F7/70; G03F7/70383; G03F7/704; G03F7/70425; G03F7/70466; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/0229; H10D86/40; H10D86/421; H10D86/425; H10D86/60; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/381; H10P14/3812; H10P14/382
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
138 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate having an active matrix area and a peripheral circuit area; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over one of the active matrix area and the peripheral circuit area; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the other one of the active matrix area and the peripheral circuit area is prevented from being irradiated with said laser beam by said mask.
Claim 2
Independent Claim
138 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate having an active matrix area and a peripheral circuit area; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over one of the active matrix area and the peripheral circuit area; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the other one of the active matrix area and the peripheral circuit area is prevented from being irradiated with said laser beam by said mask.
Claim 3
Dependent Claim
16 words
A method according to claim 1 wherein said laser beam has a wavelength of 248 nm.
Claim 4
Dependent Claim
15 words
A method according to claim 1 wherein said laser beam is an excimer laser beam.
Claim 5
Dependent Claim
30 words
A method according to claim 1 wherein the cross section of said laser beam has a length of 10 to 30 cm and a width of 0.1 to 1 cm.
Claim 6
Independent Claim
125 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate having an active matrix area and a peripheral circuit area; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over the active matrix area of the substrate; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the peripheral circuit area is prevented from being irradiated with said laser beam by said mask.
Claim 7
Independent Claim
125 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate having an active matrix area and a peripheral circuit area; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over the active matrix area of the substrate; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the peripheral circuit area is prevented from being irradiated with said laser beam by said mask.
Claim 8
Dependent Claim
16 words
A method according to claim 5 wherein said laser beam has a wavelength of 248 nm.
Claim 9
Dependent Claim
15 words
A method according to claim 5 wherein said laser beam is an excimer laser beam.
Claim 10
Dependent Claim
30 words
A method according to claim 5 wherein the cross section of said laser beam has a length of 10 to 30 cm and a width of 0.1 to 1 cm.
Claim 11
Independent Claim
122 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate having an active matrix area and a peripheral circuit area; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over the peripheral circuit area; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the active matrix area is prevented from being irradiated with said laser beam by said mask.
Claim 12
Independent Claim
122 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate having an active matrix area and a peripheral circuit area; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over the peripheral circuit area; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the active matrix area is prevented from being irradiated with said laser beam by said mask.
Claim 13
Dependent Claim
16 words
A method according to claim 9 wherein said laser beam has a wavelength of 248 nm.
Claim 14
Dependent Claim
15 words
A method according to claim 9 wherein said laser beam is an excimer laser beam.
Claim 15
Dependent Claim
30 words
A method according to claim 10 wherein the cross section of said laser beam has a length of 10 to 30 cm and a width of 0.1 to 1 cm.
Claim 16
Independent Claim
199 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising amorphous silicon over a substrate having an active matrix area and a peripheral circuit area; disposing a catalyst material in contact with only a portion of the semiconductor film positioned over said peripheral circuit area of the substrate; heating said semiconductor film at such a temperature that only said portion of the semiconductor film is crystallized while another portion of the semiconductor film positioned over the active matrix area is not substantially crystallized; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over one of the active matrix area and the peripheral circuit area; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the other one of the active matrix area and the peripheral circuit area is prevented from being irradiated with said laser beam by said mask.
Claim 17
Independent Claim
199 words
A method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor film comprising amorphous silicon over a substrate having an active matrix area and a peripheral circuit area; disposing a catalyst material in contact with only a portion of the semiconductor film positioned over said peripheral circuit area of the substrate; heating said semiconductor film at such a temperature that only said portion of the semiconductor film is crystallized while another portion of the semiconductor film positioned over the active matrix area is not substantially crystallized; disposing a mask adjacent to said semiconductor film to mask a portion of the semiconductor film over one of the active matrix area and the peripheral circuit area; directing a laser beam toward said semiconductor film through said mask, said laser beam having a rectangular cross section elongated in a first direction; scanning only said portion of the semiconductor film with said laser beam by moving said substrate in a second direction orthogonal to said first direction while another portion of the semiconductor film over the other one of the active matrix area and the peripheral circuit area is prevented from being irradiated with said laser beam by said mask.
Claim 18
Dependent Claim
16 words
A method according to claim 13 wherein said laser beam has a wavelength of 248 nm.
Claim 19
Dependent Claim
15 words
A method according to claim 13 wherein said laser beam is an excimer laser beam.
Claim 20
Dependent Claim
30 words
A method according to claim 13 wherein the cross section of said laser beam has a length of 10 to 30 cm and a width of 0.1 to 1 cm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-12-27 | 2003-06-28 | 2003-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-27 | 2007-06-28 | 2007-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-27 | 2011-06-28 | 2011-12-28 | $7700.00 | Window Closed / Lapsed |