Substrate for a display device, a TFT display element using the substrate

Claim 2

A substrate for a display device wherein a plurality of row electrode lines and a plurality of column electrode lines are arranged in a matrix form on a substrate; pixel electrodes and pixel-drive-TFTs, each having a polycrystalline semiconductor channel, are provided so as to correspond to each intersection of the row electrode lines and the column electrode lines; the pixel-drive-TFTs are arranged in a line in at least the direction of said row electrode lines; row signals are supplied through the row electrode lines to the pixel-drive-TFTs; and column signals are supplied through the column electrode lines to the pixel-drive-TFTs, the substrate being characterized in that a plurality of row driver circuits for supplying row signals are formed on the substrate so as to correspond to each of the row electrode lines; each of the row driver circuits has at least one row-drive-TFT; the row-drive-TFT has a polycrystalline semiconductor channel; and the row-drive-TFT is arranged in a line in the direction of said row electrode lines with respect to the pixel-drive-TFTs for a single row electrode line wherein the polycrystalline semiconductor channel of the row-drive-TFTs has a channel width of 50 μm-2000 μm and a channel length of 4 μm-8 μm.

Claim 3

The substrate for a display device according to claim 1, wherein either longer one between the channel width and the channel length of the polycrystalline channel of the row-drive-TFTs is arranged substantially parallel to the direction of said row electrode lines.

Claim 4

The substrate for a display device according to claim 2, wherein a CMOS inverter in which a channel width nCH d of n channel is 50 μm-500 μm and a channel width pCH d of p channel is 1-10 times as large as nCH d is provided as the row-drive-TFT in the row driver circuit.

Claim 5

The substrate for a display device according to claim 1, wherein the row driver circuit includes a shift register circuit having the row-drive-TFTs in which at least one of the row-drive-TFTs in the shift register is arranged in a line with respect to the pixel-drive-TFTs for a row electrode line.

Claim 6

The substrate for a display device according to claim 4, wherein all the row-drive-TFTs in the shift register are arranged in a line form with respect to the pixel-drive-TFTs for a row electrode line.

Claim 7

A substrate for a display device wherein a plurality of row electrode lines and a plurality of column electrode lines are arranged in a matrix form on a substrate; pixel electrodes and pixel-drive-TFTs, each having a polycrystalline semiconductor channel are provided so as to correspond to each intersection of the row electrode lines and the column electrode lines; the pixel-drive-TFTs are arranged in a line in at least the direction of said row electrode lines; row signals are supplied through the row electrode lines to the pixel-drive-TFTs; and column signals are supplied through the column electrode lines to the pixel-drive-TFTs, the substrate being characterized in that a plurality of row driver circuits for supplying row signals are formed on the substrate so as to correspond to each of the row electrode lines; each of the row driver circuits has at least one row-drive-TFT; the row-drive-TFT has a polycrystalline semiconductor channel; the row-drive-TFT is arranged in a line in the direction of said row electrode lines with respect to the pixel-drive-TFTs for a single row electrode line, a plurality of column driver circuits for supplying column signals are formed on the substrate so as to correspond to the column electrode lines; the column driver circuits have respectively at least one column-drive TFT; the column-drive TFT has a polycrystalline semiconductor channel; and a plurality of the column-drive-TFTs selected from column driver circuits of different columns are arranged in a line substantially parallel to the direction of said row electrode lines wherein the polycrystalline semiconductor channel of the row-drive-TFTs has a channel width of 50 μm-2000 μm and a channel length of 4 μm-8 μm.

Claim 8

A substrate for a display device wherein a plurality of row electrode lines and a plurality of column electrode lines are arranged in a matrix form on a substrate; pixel electrodes and pixel-drive-TFTs, each having a polycrystalline semiconductor channel are provided so as to correspond to each intersection of the row electrode lines and the column electrode lines; the pixel-drive-TFTs are arranged in a line in at least the direction of said row electrode lines; row signals are supplied through the row electrode lines to the pixel-drive-TFTs; and column signals are supplied through the column electrode lines to the pixel-drive-TFTs, the substrate being characterized in that a plurality of row driver circuits for supplying row signals are formed on the substrate so as to correspond to each of the row electrode lines; each of the row driver circuits has at least one row-drive-TFT; the row-drive-TFT has a polycrystalline semiconductor channel; the row-drive-TFT is arranged in a line in the direction of said row electrode lines with respect to the pixel-drive-TFTs for a single row electrode line, a plurality of column driver circuits for supplying column signals are formed on the substrate so as to correspond to the column electrode lines; the column driver circuits have respectively at least one column-drive TFT; the column-drive TFT has a polycrystalline semiconductor channel; and a plurality of the column-drive-TFTs selected from column driver circuits of different columns are arranged in a line substantially parallel to the direction of said row electrode lines wherein the polycrystalline semiconductor channel of the row-drive-TFTs has a channel width of 50 μm-2000 μm and a channel length of 4 μm-8 μm.

Claim 9

The substrate for a display device according to claim 6, wherein at least one row-drive-TFT in the row driver circuit for each of the row electrode lines is arranged in a line-like form with respect to the pixel-drive-TFTs for a row electrode line, and a plurality of column-drive-TFTs selected by one or more from each of the column driver circuits for all the column electrode lines or for all the column electrode lines of one divided set of the column electrode lines are arranged in a line-like form in the direction of row electrode line.

Claim 10

The substrate for a display device according to claim 1, wherein a polycrystalline semiconductor layer is used for the polycrystalline semiconductor channel of the pixel-drive-TFTs and the polycrystalline semiconductor channel of the row-drive-TFTs wherein the polycrystalline semiconductor layer is formed by beam-annealing an amorphous semiconductor layer.

Claim 11

The substrate for a display device according to claim 6, wherein a polycrystalline semiconductor layer is used for the polycrystalline semiconductor channel of the pixel-drive-TFTs, the polycrystalline semiconductor channel of the row-drive-TFTs and the polycrystalline semiconductor channel of the column-drive-TFTs wherein the polycrystalline semiconductor layer is formed by beam-annealing an amorphous semiconductor layer.

Claim 12

A TFT display element comprising the substrate for a display device as defined in claim 1, a counter substrate having a counter electrode and a liquid crystal layer interposed between said substrate for said display device and said counter substrate.

Claim 13

A TFT display element comprising the substrate for a display device as defined in claim 6, a counter substrate having a counter electrode and a liquid crystal layer interposed between said substrate for said display device and said counter substrate.