US5877526A
Expired / Lapsed
US
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Semiconductor device having polysilicon thin-film
Assignee: Samsung Display Co Ltd
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Filing: 1997-05-05
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Granted: 1999-03-02
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Expires: 2017-05-05
Abstract
Abstract In the crystal structure of a polysilicon thin film having a field effect mobility mu FE of about 80 cm2/V.sec, a grain size is about 200 nm and a crystallite size on the (111) plane is about 180 nm. The crystal size corresponds to the size of a completely monocrystallized portion of a grain. The condition of obtaining a field effect mobility mu FE of about 80 cm2/V.sec is that the crystallite size on the (111) plane is at least 180 nm (measured value). By taking the crystallite size into consideration, it becomes possible to achieve a high field effect mobility mu FE which cannot be obtained merely by increasing the grain size.
Inventors
- 👤 Michiya Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3466; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
84 words
A semiconductor device comprising a polysilicon thin film having a plurality of silicon grains, each of said silicon grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in said polysilicon thin film being sixty percent or greater of an average value of said grain size, said average value of said crystallite sizes on the (111) plane being 180 nm or greater.
Claim 2
Dependent Claim
84 words
A semiconductor device comprising a polysilicon thin film having a plurality of silicon grains, each of said silicon grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in said polysilicon thin film being sixty percent or greater of an average value of said grain size, said average value of said crystallite sizes on the (111) plane being 180 nm or greater.
Claim 3
Dependent Claim
23 words
The semiconductor according to claim 1, wherein said average value of said grain sizes of said silicon grains being greater than 200 nm.
Claim 4
Dependent Claim
42 words
The semiconductor device according to claim 1, wherein said polysilicon thin film has a thickness, and said average values of said silicon grain sizes and said crystallite sizes on the (111) plane being greater than said thickness of said polysilicon thin film.
Claim 5
Dependent Claim
19 words
The semiconductor device according to claim 3, wherein said thickness of said polysilicon thin film is 500 to 1500Å.
Claim 6
Dependent Claim
15 words
The semiconductor device according to claim 1, having a mobility of 80 cm 2 /V.sec.
Claim 7
Dependent Claim
15 words
The semiconductor device according to claim 1, having a mobility of 90 cm 2 /V.sec.
Claim 8
Dependent Claim
106 words
A semiconductor device comprising a polysilicon thin film having a plurality of silicon grains, a gate insulating film directly formed on said polysilicon thin film and a gate electrode directly formed on said gate insulating film; each of said silicon grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in said polysilicon thin film being sixty percent or greater of an average value of said grain sizes, said average value of said crystallite sizes on the (111) plane being 180 nm or greater.
Claim 9
Dependent Claim
106 words
A semiconductor device comprising a polysilicon thin film having a plurality of silicon grains, a gate insulating film directly formed on said polysilicon thin film and a gate electrode directly formed on said gate insulating film; each of said silicon grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in said polysilicon thin film being sixty percent or greater of an average value of said grain sizes, said average value of said crystallite sizes on the (111) plane being 180 nm or greater.
Claim 10
Dependent Claim
22 words
The semiconductor device according to claim 7, wherein said polysilicon thin film comprises an impurity doped region in which dopants are diffused.
Claim 11
Dependent Claim
22 words
The semiconductor device according to claim 8, wherein said polysilicon thin film comprises an intrinsic region which does not include a dopant.
Claim 12
Dependent Claim
24 words
The semiconductor device according to claim 7, wherein said average value of said grain sizes of said silicon grains being greater than 200 nm.
Claim 13
Dependent Claim
42 words
The semiconductor device according to claim 7, wherein said polysilicon thin film has a thickness, and said average values of said silicon grain sizes and said crystallite sizes on the (111) plane are greater than said thickness of said polysilicon thin film.
Claim 14
Dependent Claim
19 words
The semiconductor device according to claim 11, wherein said thickness of said polysilicon thin film is 500 to 1500Å.
Claim 15
Dependent Claim
115 words
A semiconductor device comprising a polysilicon thin film having a plurality of silicon grains, a gate insulating film directly formed on said polysilicon thin film and a gate electrode directly formed on said gate insulating film; each of said silicon grains including a grain size and a crystallite having a crystallite size on the (111) plane; an average value of the crystallite sizes on the (111) plane of the crystallites included in said polysilicon thin film being 180 nm or greater, wherein said polysilicon thin film has a thickness, and average values of said silicon grain size and said crystallite sizes on the (111) plane are greater than said thickness of said polysilicon thin film.
Claim 16
Dependent Claim
115 words
A semiconductor device comprising a polysilicon thin film having a plurality of silicon grains, a gate insulating film directly formed on said polysilicon thin film and a gate electrode directly formed on said gate insulating film; each of said silicon grains including a grain size and a crystallite having a crystallite size on the (111) plane; an average value of the crystallite sizes on the (111) plane of the crystallites included in said polysilicon thin film being 180 nm or greater, wherein said polysilicon thin film has a thickness, and average values of said silicon grain size and said crystallite sizes on the (111) plane are greater than said thickness of said polysilicon thin film.
Claim 17
Dependent Claim
34 words
The semiconductor device according to claim 13, wherein said crystallite on the (111) plane included in each of said silicon grains has substantially the same size as that of each of said silicon grains.
References Cited (Backward Citations)
US4625224A
Cited
US4649624A
Cited
FR2573916A1
Cited
US4693759A
Cited
US5200630A
Cited
US5145808A
Cited
US5200846A
Cited
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