US5561081A
Expired / Lapsed
US
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Method of forming a semiconductor device by activating regions with a laser light
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-02-03
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Granted: 1996-10-01
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Expires: 2014-02-03
Abstract
Abstract An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
Inventors
- 👤 Akira Takenouchi
- 👤 Atsunori Suzuki
- 👤 Hideto Ohnuma
- 👤 Hongyong Zhang
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:26
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; B; B23; B23K; B23K26/00; B23K26/02; B23K26/06; B23K26/073; B23K26/0738; H10D30/0321; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
74 words
A method of forming a semiconductor device comprising the steps of: forming a silicon film containing an impurity over a glass substrate; heating said silicon film: and exposing said heated silicon film to a pulsed laser light to activate atoms of the impurity, wherein a cross section of said pulsed laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 2
Independent Claim
74 words
A method of forming a semiconductor device comprising the steps of: forming a silicon film containing an impurity over a glass substrate; heating said silicon film: and exposing said heated silicon film to a pulsed laser light to activate atoms of the impurity, wherein a cross section of said pulsed laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said impurity is at least one of phosphorus and boron.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein said pulsed laser light has an energy density of 200 to 400 mJ/cm 2 .
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein said pulsed laser light is an excimer laser light.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said substrate has a temperature during said exposing of 100° C. to 500° C.
Claim 7
Independent Claim
101 words
A method of forming a semiconductor device comprising the steps of: forming a gate insulating film on a crystalline silicon film shaped in the form of an island over a substrate; forming a gate electrode on said gate insulating film; introducing phosphorus or boron into said crystalline silicon film with said gate electrode as a mask; heating said substrate; and irradiating said crystalline silicon film with a pulsed laser light, wherein a cross section of said pulsed laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 8
Independent Claim
101 words
A method of forming a semiconductor device comprising the steps of: forming a gate insulating film on a crystalline silicon film shaped in the form of an island over a substrate; forming a gate electrode on said gate insulating film; introducing phosphorus or boron into said crystalline silicon film with said gate electrode as a mask; heating said substrate; and irradiating said crystalline silicon film with a pulsed laser light, wherein a cross section of said pulsed laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 9
Dependent Claim
18 words
The method of claim 6 wherein the wavelength of said pulsed laser light is 400 nm or shorter.
Claim 10
Dependent Claim
14 words
The method of claim 6 wherein said substrate is made of a borosilicate glass.
Claim 11
Dependent Claim
21 words
The method of claim 6 wherein the energy density of said pulsed laser light is 200 to 400 mJ/cm 2 .
Claim 12
Dependent Claim
13 words
The method of claim 6 wherein said temperature is 100 to 500° C.
Claim 13
Dependent Claim
15 words
The method of claim 6 wherein said pulsed laser light is an excimer laser light.
Claim 14
Dependent Claim
20 words
The method of claim 6 wherein said substrate has a temperature during said irradiating of 100° C. to 500° C.
Claim 15
Independent Claim
69 words
A method of forming a semiconductor device comprising: forming a silicon film containing an impurity on a glass substrate; heating said silicon film; and scanning said heated silicon film with a laser beam to activate atoms of the impurity, wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
Claim 16
Independent Claim
69 words
A method of forming a semiconductor device comprising: forming a silicon film containing an impurity on a glass substrate; heating said silicon film; and scanning said heated silicon film with a laser beam to activate atoms of the impurity, wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
Claim 17
Dependent Claim
22 words
The method of claim 13 wherein said silicon film has a temperature of 100° C. to 500° C. during said scanning step.
Claim 18
Dependent Claim
20 words
The method of claim 13 wherein said laser light has an energy density of 200 to 400 mJ/cm 2 .
Claim 19
Dependent Claim
14 words
The method of claim 13 wherein said laser light is an excimer laser light.
Claim 20
Independent Claim
65 words
A method of forming a semiconductor comprising: forming a silicon film containing an impurity over a glass substrate;and scanning said silicon film with a laser beam in a vacuum to activate atoms of the impurity, wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
Claim 21
Independent Claim
65 words
A method of forming a semiconductor comprising: forming a silicon film containing an impurity over a glass substrate;and scanning said silicon film with a laser beam in a vacuum to activate atoms of the impurity, wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
Claim 22
Dependent Claim
22 words
The method of claim 17 wherein said silicon film has a temperature of 100° C. to 500° C. during said scanning step.
Claim 23
Dependent Claim
20 words
The method of claim 17 wherein said laser beam has an energy density of 200 to 400 mJ/cm 2 .
Claim 24
Independent Claim
76 words
A method of forming a semiconductor device comprising the steps of: heating a silicon film containing an impurity; and exposing the heated silicon film to a pulsed laser light having an energy density of 200 to 400 mJ/cm 2 , to activate atoms of the impurity; wherein a cross section of said laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 25
Independent Claim
76 words
A method of forming a semiconductor device comprising the steps of: heating a silicon film containing an impurity; and exposing the heated silicon film to a pulsed laser light having an energy density of 200 to 400 mJ/cm 2 , to activate atoms of the impurity; wherein a cross section of said laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 26
Independent Claim
106 words
A method of forming a semiconductor device comprising the steps of: forming a silicon film on a substrate; forming a gate insulating film on the silicon film; forming a gate electrode on the gate insulating film; introducing an impurity into the silicon film using the gate electrode as a mask; heating the silicon film; and irradiating the heated silicon film with a pulsed laser light having an energy density of 200 to 400 mJ/cm 2 , wherein a cross section of said laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 27
Independent Claim
106 words
A method of forming a semiconductor device comprising the steps of: forming a silicon film on a substrate; forming a gate insulating film on the silicon film; forming a gate electrode on the gate insulating film; introducing an impurity into the silicon film using the gate electrode as a mask; heating the silicon film; and irradiating the heated silicon film with a pulsed laser light having an energy density of 200 to 400 mJ/cm 2 , wherein a cross section of said laser light taken perpendicular to a length of said laser light has a width and a height, with said width greater than said height.
Claim 28
Independent Claim
70 words
A method of forming a semiconductor device comprising the steps of: forming an intrinsic semiconductor layer comprising silicon over a substrate; heating said semiconductor layer; and crystallizing said semiconductor layer by irradiating a laser beam to said heated semiconductor layer, wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
Claim 29
Independent Claim
70 words
A method of forming a semiconductor device comprising the steps of: forming an intrinsic semiconductor layer comprising silicon over a substrate; heating said semiconductor layer; and crystallizing said semiconductor layer by irradiating a laser beam to said heated semiconductor layer, wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height.
Claim 30
Dependent Claim
19 words
The method of claim 22 wherein said laser beam is emitted from an upper portion of said semiconductor layer.
Claim 31
Dependent Claim
17 words
The method of claim 22 wherein said substrate is placed in a vacuum during said irradiation step.
Claim 32
Independent Claim
79 words
A method of forming a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; heating said semiconductor layer; emitting a pulsed laser beam wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height; and scanning said heated semiconductor layer with said pulsed laser beam in a direction orthogonal to said width of said laser beam.
Claim 33
Independent Claim
79 words
A method of forming a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; heating said semiconductor layer; emitting a pulsed laser beam wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height; and scanning said heated semiconductor layer with said pulsed laser beam in a direction orthogonal to said width of said laser beam.
Claim 34
Dependent Claim
15 words
The method of claim 25 wherein said scanning is carried out in a step-wise manner.
Claim 35
Dependent Claim
15 words
The method of claim 25 wherein said scanning is carried out in a continuous manner.
Claim 36
Dependent Claim
13 words
The method of claim 25 wherein said semiconductor layer has an intrinsic conductivity.
Claim 37
Dependent Claim
20 words
The method of claim 25 wherein said semiconductor layer is doped with an impurity for imparting one conductivity type thereto.
Claim 38
Independent Claim
87 words
A method of forming a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; emitting a pulsed laser beam wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height; and scanning said semiconductor layer with said pulsed laser beam, wherein said substrate is scanned with said laser beam by moving said substrate in a direction orthogonal to said width of said laser beam.
Claim 39
Independent Claim
87 words
A method of forming a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; emitting a pulsed laser beam wherein a cross section of said laser beam taken perpendicular to a length of said laser beam has a width and a height, with said width greater than said height; and scanning said semiconductor layer with said pulsed laser beam, wherein said substrate is scanned with said laser beam by moving said substrate in a direction orthogonal to said width of said laser beam.
Claim 40
Dependent Claim
15 words
The method of claim 30 wherein said scanning is carried out in a step-wise manner.
Claim 41
Dependent Claim
15 words
The method of claim 30 wherein said scanning is carried out in a continuous manner.
Claim 42
Dependent Claim
13 words
The method of claim 30 wherein said semiconductor layer has an intrinsic conductivity.
Claim 43
Dependent Claim
20 words
The method of claim 30 wherein said semiconductor layer is doped with an impurity for imparting one conductivity type thereto.
Claim 44
Dependent Claim
36 words
The method of claim 1 wherein said substrate is moved in a direction orthogonal to said width of said laser light so that an entire surface of said silicon film is scanned with said laser light.
Claim 45
Dependent Claim
36 words
The method of claim 6 wherein said substrate is moved in a direction orthogonal to said width of said laser light so that an entire surface of said silicon film is scanned with said laser light.
Claim 46
Dependent Claim
15 words
The method of claim 13 wherein said scanning is carded out by moving said substrate.
Claim 47
Dependent Claim
15 words
The method of claim 17 wherein said scanning is carded out by moving said substrate.
Claim 48
Dependent Claim
15 words
The method of claim 22 wherein said pulsed laser beam is an excimer laser beam.
Claim 49
Dependent Claim
15 words
The method of claim 25 wherein said pulsed laser beam is an excimer laser beam.
Claim 50
Dependent Claim
15 words
The method of claim 28 wherein said pulsed laser beam is an excimer laser beam.
References Cited (Backward Citations)
US4546009A
Cited
US4646426A
Cited
US4436557A
Cited
JPH01187814A
Cited
JPH02294027A
Cited
US5306651A
Cited
US5236865A
Cited
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