US5998286A
Expired / Lapsed
US
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Method to grow self-aligned silicon on a poly-gate, source and drain region
Assignee: UNITED SEMICONDUCTOR CIRCUIT CORP
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Filing: 1998-03-26
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Granted: 1999-12-07
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Expires: 2018-03-26
Abstract
Abstract The method of the present invention includes forming a MOS on a semiconductor substrate. Subsequently, a silicon-rich metal silicide layer is deposited on the MOS and substrate by using chemical vapor deposition to act as a silicon material source. Then, a thermal process is carried out to separate a portion of the silicon out of the metal silicide layer, thereby forming a silicon layer on top of the gate of the MOS, source/drain. The nest step is to remove the metal suicide layer. A self-aligned metal silicide layer is formed on the silicon layer.
Inventors
- 👤 Shu-Jen Chen
- 👤 Jacky Kuo
- 👤 Jiunn-Hsien Lin
- 👤 Chih-Ching Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/0113; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
115 words
A method of forming a self-aligned silicon layer on a gate, a source and a drain of a metal oxide semiconductor transistor having side wall spacers on side walls of said gate, said method comprising the steps of: forming said transistor on a semiconductor substrate; forming a silicon-rich metal silicide layer on said gate, said side wall spacers and on said substrate by using chemical vapor deposition, said silicon-rich metal silicide layer being as a silicon material source; performing a thermal process to separate a portion of silicon out of said silicon-rich metal silicide layer, thereby forming said self-aligned silicon layer on said gate, said source and drain; and removing said silicon-rich metal silicide layer.
Claim 2
Independent Claim
115 words
A method of forming a self-aligned silicon layer on a gate, a source and a drain of a metal oxide semiconductor transistor having side wall spacers on side walls of said gate, said method comprising the steps of: forming said transistor on a semiconductor substrate; forming a silicon-rich metal silicide layer on said gate, said side wall spacers and on said substrate by using chemical vapor deposition, said silicon-rich metal silicide layer being as a silicon material source; performing a thermal process to separate a portion of silicon out of said silicon-rich metal silicide layer, thereby forming said self-aligned silicon layer on said gate, said source and drain; and removing said silicon-rich metal silicide layer.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein said silicon-rich metal silicide layer comprises silicon-rich tungsten silicide (WSi x ).
Claim 4
Dependent Claim
18 words
The method of claim 1, wherein said silicon-rich metal silicide layer comprises silicon-rich titanium silicide (TiSi x ).
Claim 5
Dependent Claim
8 words
The method of claim 2, wherein said x≧2.
Claim 6
Dependent Claim
8 words
The method of claim 3, wherein said x≧2.
Claim 7
Dependent Claim
20 words
The method of claim 1, wherein said thermal process is performed at a temperature about 1000 to 1100 degrees centigrade.
Claim 8
Dependent Claim
17 words
The method of claim 1, wherein said thermal process is performed for about 30 to 60 seconds.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein said thermal process is performed in an ambient comprising N 2 .
Claim 10
Dependent Claim
16 words
The method of claim 1, wherein said thermal process is performed in an ambient comprising Ar.
Claim 11
Independent Claim
173 words
A method of forming a self-aligned silicide, a polycide by using self-aligned silicon layer on a metal oxide semiconductor transistor having side wall spacers, said method comprising the steps of: forming said transistor on a semiconductor substrate; forming a silicon-rich metal silicide layer on a gate of said transistor, said side wall spacers and on said substrate by using chemical vapor deposition, said silicon-rich metal silicide layer being as a silicon material source; performing a thermal process to separate a portion of silicon out of said silicon-rich metal silicide layer, thereby forming said self-aligned silicon layer on said gate, a source and a drain of said transistor; removing said silicon-rich metal silicide layer; forming a metal layer on said transistor and on said self-aligned silicon layer; performing a rapid thermal annealing (RTP) process to react said metal layer with said self-aligned silicon layer, thereby forming said self-aligned silicide, said polycide on said source, said drain and said gate, respectively; and removing said metal layer that does not react with said self-aligned silicon layer.
Claim 12
Independent Claim
173 words
A method of forming a self-aligned silicide, a polycide by using self-aligned silicon layer on a metal oxide semiconductor transistor having side wall spacers, said method comprising the steps of: forming said transistor on a semiconductor substrate; forming a silicon-rich metal silicide layer on a gate of said transistor, said side wall spacers and on said substrate by using chemical vapor deposition, said silicon-rich metal silicide layer being as a silicon material source; performing a thermal process to separate a portion of silicon out of said silicon-rich metal silicide layer, thereby forming said self-aligned silicon layer on said gate, a source and a drain of said transistor; removing said silicon-rich metal silicide layer; forming a metal layer on said transistor and on said self-aligned silicon layer; performing a rapid thermal annealing (RTP) process to react said metal layer with said self-aligned silicon layer, thereby forming said self-aligned silicide, said polycide on said source, said drain and said gate, respectively; and removing said metal layer that does not react with said self-aligned silicon layer.
Claim 13
Dependent Claim
18 words
The method of claim 10, wherein said silicon-rich metal silicide layer comprises silicon-rich tungsten silicide (WSi x ).
Claim 14
Dependent Claim
18 words
The method of claim 10, wherein said silicon-rich metal silicide layer comprises silicon-rich titanium silicide (TiSi x ).
Claim 15
Dependent Claim
8 words
The method of claim 11, wherein said x≧2.
Claim 16
Dependent Claim
8 words
The method of claim 12, wherein said x≧2.
Claim 17
Dependent Claim
20 words
The method of claim 10, wherein said thermal process is performed at a temperature about 1000 to 1100 degrees centigrade.
Claim 18
Dependent Claim
17 words
The method of claim 10, wherein said thermal process is performed for about 30 to 60 seconds.
Claim 19
Dependent Claim
18 words
The method of claim 10, wherein said thermal process is performed in an ambient comprising N 2 .
Claim 20
Dependent Claim
16 words
The method of claim 10, wherein said thermal process is performed in an ambient comprising Ar.
Claim 21
Independent Claim
88 words
A method of forming a self-aligned silicon layer on a silicon layer, said method comprising the steps of: providing a silicon layer; forming a silicon-rich metal silicide layer on said silicon layer by using chemical vapor deposition, said silicon-rich metal silicide layer being as a silicon material source; performing a thermal process to separate a portion of silicon in said silicon-rich metal silicide layer out of said silicon-rich metal silicide layer, thereby forming said self-aligned silicon layer on said silicon layer; and removing said silicon-rich metal silicide layer.
Claim 22
Independent Claim
88 words
A method of forming a self-aligned silicon layer on a silicon layer, said method comprising the steps of: providing a silicon layer; forming a silicon-rich metal silicide layer on said silicon layer by using chemical vapor deposition, said silicon-rich metal silicide layer being as a silicon material source; performing a thermal process to separate a portion of silicon in said silicon-rich metal silicide layer out of said silicon-rich metal silicide layer, thereby forming said self-aligned silicon layer on said silicon layer; and removing said silicon-rich metal silicide layer.
Claim 23
Dependent Claim
18 words
The method of claim 19, wherein said silicon-rich metal silicide layer comprises silicon-rich tungsten silicide (WSi x ).
Claim 24
Dependent Claim
18 words
The method of claim 19, wherein said silicon-rich metal silicide layer comprises silicon-rich titanium silicide (TiSi x ).
Claim 25
Dependent Claim
8 words
The method of claim 20, wherein said x≧2.
Claim 26
Dependent Claim
8 words
The method of claim 21, wherein said x≧2.
Claim 27
Dependent Claim
20 words
The method of claim 19, wherein said thermal process is performed at a temperature about 1000 to 1100 degrees centigrade.
Claim 28
Dependent Claim
17 words
The method of claim 19, wherein said thermal process is performed for about 30 to 60 seconds.
Claim 29
Dependent Claim
18 words
The method of claim 19, wherein said thermal process is performed in an ambient comprising N 2 .
Claim 30
Dependent Claim
16 words
The method of claim 19, wherein said thermal process is performed in an ambient comprising Ar.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-12-06 | 2003-06-07 | 2003-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-06 | 2007-06-07 | 2007-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-06 | 2011-06-07 | 2011-12-07 | $7700.00 | Window Closed / Lapsed |