Patent US5980766A successfully refreshed from Google Patents.
US5980766A
Expired / Lapsed
US
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Process optimization in gas phase dry etching
Assignee: Individual
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Filing: 1997-10-02
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Granted: 1999-11-09
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Expires: 2017-10-02
Abstract
Abstract A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.
Inventors
- 👤 Daniel L. Flamm
- 👤 John P. Verboncoeur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:51
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
103 words
A method of determining a surface reaction rate constant comprising: providing apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting said surface reaction rate constant from said etch rate data.
Claim 2
Independent Claim
103 words
A method of determining a surface reaction rate constant comprising: providing apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting said surface reaction rate constant from said etch rate data.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said processing is diffusion limited.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein said spatial coordinate includes a radius and an angle.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein said spatial coordinate includes an x-direction and a y-direction.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein said extracting correlates said surface reaction rate constant over a diffusivity with said etch rate, said etch rate being defined by said non-uniform etching profile.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein said etch rate is defined by said non-uniform etching profile at selected spatial coordinates over a time.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said processing is an ashing method.
Claim 9
Dependent Claim
17 words
The method of claim 7 wherein said ashing method comprises reactants including an oxygen and a photoresist.
Claim 10
Independent Claim
104 words
A method of designing a reactor comprising the steps of: providing an apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film of said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
Claim 11
Independent Claim
104 words
A method of designing a reactor comprising the steps of: providing an apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film of said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
Claim 12
Dependent Claim
19 words
The method of claim 9 wherein said processing at a position on said non-uniform etching profile is diffusion limited.
Claim 13
Dependent Claim
24 words
The method of claim 9 wherein said spatial coordinate which defines said position along said non-uniform etching profile includes a radius and an angle.
Claim 14
Dependent Claim
24 words
The method of claim 9 wherein said spatial coordinate which defines said position within said non-uniform etching profile includes an x-direction and a y-direction.
Claim 15
Dependent Claim
31 words
The method of claim 9 wherein said extracting correlates said surface reaction rate constant over a diffusivity with said etch rate, said etch rate being defined by said non-uniform etching profile.
Claim 16
Dependent Claim
23 words
The method of claim 9 wherein said etch rate is defined by said non-uniform etching profile at selected spatial coordinates over a time.
Claim 17
Dependent Claim
12 words
The method of claim 9 wherein said processing is an ashing method.
Claim 18
Dependent Claim
17 words
The method of claim 15 wherein said ashing method comprises reactants including an oxygen and a photoresist.
Claim 19
Dependent Claim
19 words
The method of claim 9 wherein said surface reaction rate constant is used to design a plasma etching apparatus.
Claim 20
Dependent Claim
14 words
The method of claim 17 wherein said plasma etching apparatus is a co-axial reactor.
Claim 21
Dependent Claim
20 words
The method of claim 17 wherein said surface rate reaction constant is used to design a second plasma etching apparatus.
Claim 22
Dependent Claim
116 words
A fabrication method, using a plasma etching apparatus, said method comprising: providing a substrate selected from a group consisting of a semiconductor wafer, a plate, and a flat panel display, said substrate comprising a top surface; forming a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile of said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
Claim 23
Dependent Claim
116 words
A fabrication method, using a plasma etching apparatus, said method comprising: providing a substrate selected from a group consisting of a semiconductor wafer, a plate, and a flat panel display, said substrate comprising a top surface; forming a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile of said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
References Cited (Backward Citations)
US4192706A
Cited
US4226665A
Cited
US4243506A
Cited
US4297162A
Cited
US4340461A
Cited
US5330606A
Cited
US5147520A
Cited
US5445709A
Cited
US5399229A
Cited
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