US5330606A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma source for etching
Assignee: Panasonic Holdings Corp
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Filing: 1991-12-10
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Granted: 1994-07-19
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Expires: 2011-12-10
Abstract
Abstract An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.
Inventors
- 👤 Masafumi Kubota
- 👤 Noboru Nomura
- 👤 Tokuhiko Tamaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:11
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; H01J37/32137; H01J37/32155; H01J37/32165
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
158 words
An apparatus for generating plasma comprising: a plasma chamber; a pair of electrodes for generating plasma in said plasma chamber; first power supply means for applying a first high-frequency power to said pair of electrodes, to produce an oscillation electric field in a space formed by said pair of electrodes; a holder for holding at least one wafer, said holder disposed in said plasma chamber and provided outside said space formed by said electrodes, said holder having a holding face which faces said space, said holding face being substantially parallel to the direction of said oscillation electric field; and second power supply means for applying a second high-frequency power to said holder, to supply said holder with a bias voltage, wherein the period of said first high-frequency power is shorter than the period of said second high-frequency power, and is shorter than the time required for electrons contained in said plasma to travel between said pair of electrodes.
Claim 2
Independent Claim
158 words
An apparatus for generating plasma comprising: a plasma chamber; a pair of electrodes for generating plasma in said plasma chamber; first power supply means for applying a first high-frequency power to said pair of electrodes, to produce an oscillation electric field in a space formed by said pair of electrodes; a holder for holding at least one wafer, said holder disposed in said plasma chamber and provided outside said space formed by said electrodes, said holder having a holding face which faces said space, said holding face being substantially parallel to the direction of said oscillation electric field; and second power supply means for applying a second high-frequency power to said holder, to supply said holder with a bias voltage, wherein the period of said first high-frequency power is shorter than the period of said second high-frequency power, and is shorter than the time required for electrons contained in said plasma to travel between said pair of electrodes.
Claim 3
Dependent Claim
27 words
An apparatus according to claim 1, wherein a distance between said electrodes is longer than a length between both ends of said holding face of said holder.
Claim 4
Dependent Claim
18 words
An apparatus according to claim 1, wherein said first high-frequency power has a frequency greater than 50 MHz.
Claim 5
Dependent Claim
17 words
An apparatus according to claim 1, wherein said pair of electrodes is provided inside said plasma chamber.
Claim 6
Dependent Claim
17 words
An apparatus according to claim 1, wherein said pair of electrodes is provided outside said plasma chamber.
Claim 7
Dependent Claim
18 words
An apparatus according to claim 1, further comprising temperature control means for regulating the temperature of said holder.
Claim 8
Dependent Claim
155 words
A plasma etcher comprising: a plasma chamber a pair of electrodes for generating plasma in said plasma chamber; first power supply means for applying a first high-frequency power to said pair of electrodes, to produce an oscillation electric field in a space formed by said pair of electrodes; a holder for holding at least one wafer, said holder disposed in said plasma chamber and provided outside said space formed by said electrodes, said holder having a holding face which faces said space, said holding face being substantially parallel to the direction of said oscillation electric field; and second power supply means for applying a second high-frequency power to said holder, to supply said holder with bias voltage, wherein the period of said first high-frequency power is shorter than the period of said second high-frequency power, and is shorter than the time required for electrons contained in said plasma to travel between said pair of electrodes.
Claim 9
Dependent Claim
155 words
A plasma etcher comprising: a plasma chamber a pair of electrodes for generating plasma in said plasma chamber; first power supply means for applying a first high-frequency power to said pair of electrodes, to produce an oscillation electric field in a space formed by said pair of electrodes; a holder for holding at least one wafer, said holder disposed in said plasma chamber and provided outside said space formed by said electrodes, said holder having a holding face which faces said space, said holding face being substantially parallel to the direction of said oscillation electric field; and second power supply means for applying a second high-frequency power to said holder, to supply said holder with bias voltage, wherein the period of said first high-frequency power is shorter than the period of said second high-frequency power, and is shorter than the time required for electrons contained in said plasma to travel between said pair of electrodes.
Claim 10
Dependent Claim
28 words
A plasma etcher according to claim 7, wherein a distance between said electrodes is longer than a length between both ends of said holding face of said holder.
Claim 11
Dependent Claim
19 words
A plasma etcher according to claim 7, wherein said first high-frequency power has a frequency greater than 50 MHz.
Claim 12
Dependent Claim
18 words
A plasma etcher according to claim 7, wherein said pair of electrodes is provided outside said plasma chamber.
Claim 13
Dependent Claim
19 words
A plasma etcher according to claim 7, further comprising temperature control means for regulating the temperature of said holder.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-18 | 1998-01-17 | 1998-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-18 | 2002-01-17 | 2002-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-18 | 2006-01-17 | 2006-07-19 | $7700.00 | Window Closed / Lapsed |