Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the step coverage of an upper layer by removing residuals in a level difference part to finish said part with the desired angle by a method wherein an independent electrode in the periphery of a parallel flat electrodes is arranged and an independent A.C. power in applied to that electrode to control an incident angle of reactive ions into a substrate and to add the lateral etching effect. CONSTITUTION:When high-frequency power 1 is applied, a self-bias is generated in the periphery of a substrate by the upper and lower electrodes 2 and an electric field is produced in vertical direction. At the same time, an electric field in horizontal direction is produced by a horizontal electrode 9 and ions enters into a substrate obliquely. The lateral-direction components of the reactive ions 4 change in all times according to frequency of horizontal electric power. The intensity of reactive ions in horizontal direction can be controlled by control of frequency and electric power in horizontal direction. For example, if A.C. power proportional to coswt and sinwt is applied in X and Y-directions respectively, the uniform electric field which makes a round with a constant cycle 1/w in horizontal direction and thus the uniform etching is realized.

Inventors

• 👤 Yoshio Tsuruta
• 👤 鶴田　芳雄

Bibliographic Details