US5980766A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process optimization in gas phase dry etching
Assignee: Individual
•
Filing: 1997-10-02
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Granted: 1999-11-09
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Expires: 2017-10-02
Abstract
Abstract A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.
Inventors
- 👤 Daniel L. Flamm
- 👤 John P. Verboncoeur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:35
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
103 words
A method of determining a surface reaction rate constant comprising: providing apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting said surface reaction rate constant from said etch rate data.
Claim 2
Independent Claim
103 words
A method of determining a surface reaction rate constant comprising: providing apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting said surface reaction rate constant from said etch rate data.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said processing is diffusion limited.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein said spatial coordinate includes a radius and an angle.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein said spatial coordinate includes an x-direction and a y-direction.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein said extracting correlates said surface reaction rate constant over a diffusivity with said etch rate, said etch rate being defined by said non-uniform etching profile.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein said etch rate is defined by said non-uniform etching profile at selected spatial coordinates over a time.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein said processing is an ashing method.
Claim 9
Dependent Claim
17 words
The method of claim 7 wherein said ashing method comprises reactants including an oxygen and a photoresist.
Claim 10
Independent Claim
104 words
A method of designing a reactor comprising the steps of: providing an apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film of said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
Claim 11
Independent Claim
104 words
A method of designing a reactor comprising the steps of: providing an apparatus comprising a substrate therein, said substrate comprising a top surface and a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform etching profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile on said film of said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
Claim 12
Dependent Claim
19 words
The method of claim 9 wherein said processing at a position on said non-uniform etching profile is diffusion limited.
Claim 13
Dependent Claim
24 words
The method of claim 9 wherein said spatial coordinate which defines said position along said non-uniform etching profile includes a radius and an angle.
Claim 14
Dependent Claim
24 words
The method of claim 9 wherein said spatial coordinate which defines said position within said non-uniform etching profile includes an x-direction and a y-direction.
Claim 15
Dependent Claim
31 words
The method of claim 9 wherein said extracting correlates said surface reaction rate constant over a diffusivity with said etch rate, said etch rate being defined by said non-uniform etching profile.
Claim 16
Dependent Claim
23 words
The method of claim 9 wherein said etch rate is defined by said non-uniform etching profile at selected spatial coordinates over a time.
Claim 17
Dependent Claim
12 words
The method of claim 9 wherein said processing is an ashing method.
Claim 18
Dependent Claim
17 words
The method of claim 15 wherein said ashing method comprises reactants including an oxygen and a photoresist.
Claim 19
Dependent Claim
19 words
The method of claim 9 wherein said surface reaction rate constant is used to design a plasma etching apparatus.
Claim 20
Dependent Claim
14 words
The method of claim 17 wherein said plasma etching apparatus is a co-axial reactor.
Claim 21
Dependent Claim
20 words
The method of claim 17 wherein said surface rate reaction constant is used to design a second plasma etching apparatus.
Claim 22
Dependent Claim
116 words
A fabrication method, using a plasma etching apparatus, said method comprising: providing a substrate selected from a group consisting of a semiconductor wafer, a plate, and a flat panel display, said substrate comprising a top surface; forming a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile of said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
Claim 23
Dependent Claim
116 words
A fabrication method, using a plasma etching apparatus, said method comprising: providing a substrate selected from a group consisting of a semiconductor wafer, a plate, and a flat panel display, said substrate comprising a top surface; forming a film overlying said top surface, said film comprising a top film surface; processing said top film surface to define a non-uniform profile on said film, and defining etch rate data comprising an etch rate and a spatial coordinate which defines a position within said non-uniform etching profile of said film on said substrate, said processing comprising a reaction between a gas phase etchant and said film; and extracting a surface reaction rate constant from said etch rate data.
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